Patents by Inventor Hiroyasu Tanaka

Hiroyasu Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11903207
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Grant
    Filed: May 20, 2022
    Date of Patent: February 13, 2024
    Assignee: Kioxia Corporation
    Inventors: Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato
  • Patent number: 11903205
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: February 13, 2024
    Assignee: Kioxia Corporation
    Inventors: Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato
  • Publication number: 20240008276
    Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
    Type: Application
    Filed: September 12, 2023
    Publication date: January 4, 2024
    Applicant: KIOXIA CORPORATION
    Inventors: Yoshiaki FUKUZUMI, Ryota KATSUMATA, Masaru KITO, Masaru KIDOH, Hiroyasu TANAKA, Yosuke KOMORI, Megumi ISHIDUKI, Junya MATSUNAMI, Tomoko FUJIWARA, Hideaki AOCHI, Ryouhei KIRISAWA, Yoshimasa MIKAJIRI, Shigeto OOTA
  • Patent number: 11844218
    Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
    Type: Grant
    Filed: June 17, 2022
    Date of Patent: December 12, 2023
    Assignee: KIOXIA CORPORATION
    Inventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kidoh, Masaru Kito, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Hideaki Aochi
  • Patent number: 11815489
    Abstract: A measurement device includes a sensor that detects a particular substance, a storage unit that stores calibration data that indicate a relationship between a measurement value of the particular substance and an output of the sensor, and a calculation unit that calculates the measurement value of the particular substance from the calibration data based on the output of the sensor. The calculation unit produces a first waveform where a plurality of first outputs of the sensor are normalized, produces a plurality of second waveforms where a plurality of second outputs of the sensor that are included in the calibration data are normalized. The calculation unit calculates a measurement value of the particular substance based on the first waveform and the plurality of second waveforms.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: November 14, 2023
    Assignee: KYOCERA Corporation
    Inventor: Hiroyasu Tanaka
  • Publication number: 20230363167
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Application
    Filed: July 7, 2023
    Publication date: November 9, 2023
    Applicant: Kioxia Corporation
    Inventors: Yoshiaki FUKUZUMI, Shinya ARAI, Masaki TSUJI, Hideaki AOCHI, Hiroyasu TANAKA
  • Patent number: 11792992
    Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: October 17, 2023
    Assignee: Kioxia Corporation
    Inventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kito, Masaru Kidoh, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Junya Matsunami, Tomoko Fujiwara, Hideaki Aochi, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota
  • Patent number: 11744075
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Grant
    Filed: February 16, 2022
    Date of Patent: August 29, 2023
    Assignee: Kioxia Corporation
    Inventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
  • Publication number: 20230146470
    Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritahle memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of colunmar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
    Type: Application
    Filed: December 30, 2022
    Publication date: May 11, 2023
    Applicant: KIOXIA CORPORATION
    Inventors: Yoshiaki FUKUZUMI, Ryota KATSUMATA, Masaru KIDOH, Masaru KITO, Hiroyasu TANAKA, Yosuke KOMORI, Megumi ISHIDUKI, Hideaki AOCHI
  • Patent number: 11574926
    Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
    Type: Grant
    Filed: October 12, 2021
    Date of Patent: February 7, 2023
    Assignee: KIOXIA CORPORATION
    Inventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kidoh, Masaru Kito, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Hideaki Aochi
  • Publication number: 20220328517
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Application
    Filed: May 20, 2022
    Publication date: October 13, 2022
    Applicant: Kioxia Corporation
    Inventors: Masaru KITO, Hideaki AOCHI, Ryota KATSUMATA, Akihiro NITAYAMA, Masaru KIDOH, Hiroyasu TANAKA, Yoshiaki FUKUZUMI, Yasuyuki MATSUOKA, Mitsuru SATO
  • Publication number: 20220320138
    Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
    Type: Application
    Filed: June 17, 2022
    Publication date: October 6, 2022
    Applicant: KIOXIA CORPORATION
    Inventors: Yoshiaki FUKUZUMI, Ryota KATSUMATA, Masaru KIDOH, Masaru KITO, Hiroyasu TANAKA, Yosuke KOMORI, Megumi ISHIDUKI, Hideaki AOCHI
  • Patent number: 11462556
    Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: October 4, 2022
    Assignee: Kioxia Corporation
    Inventors: Tetsuya Furukawa, Tomoaki Shino, Mitsuhiro Noguchi, Shinichi Watanabe, Yukio Nishida, Hiroyasu Tanaka
  • Publication number: 20220302166
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Application
    Filed: May 13, 2022
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventors: Masaru KITO, Hideaki AOCHI, Ryota KATSUMATA, Akihiro NITAYAMA, Masaru KIDOH, Hiroyasu TANAKA, Yoshiaki FUKUZUMI, Yasuyuki MATSUOKA, Mitsuru SATO
  • Patent number: 11393840
    Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: July 19, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kidoh, Masaru Kito, Hiroyasu Tanaka, Yosuke Komori, Megumi Ishiduki, Hideaki Aochi
  • Patent number: 11374021
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: June 28, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato
  • Patent number: 11362106
    Abstract: A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: June 14, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato
  • Publication number: 20220173124
    Abstract: A semiconductor memory device includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film.
    Type: Application
    Filed: February 16, 2022
    Publication date: June 2, 2022
    Applicant: Kioxia Corporation
    Inventors: Yoshiaki Fukuzumi, Shinya Arai, Masaki Tsuji, Hideaki Aochi, Hiroyasu Tanaka
  • Patent number: 11346787
    Abstract: There are provided a detection sensor, a detection sensor kit, a sensor device, a method for producing a detection sensor and a detection method which enable measurement by a simple operation. A detection sensor includes a detecting element, a first member and a second member. The detecting element detects a detection object contained in a sample. The first member includes a first channel portion, and the first channel portion includes a first storage section which stores a reagent which is fed to the detecting element. The second member is movable relative to the first member and includes a second channel portion. In the detection sensor, the first member and the second member are joined with each other and form a joined channel in which the first channel portion and the second channel portion communicate with each other.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: May 31, 2022
    Assignee: KYOCERA CORPORATION
    Inventor: Hiroyasu Tanaka
  • Patent number: RE49152
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: July 26, 2022
    Assignee: Kioxia Corporation
    Inventors: Ryota Katsumata, Hideaki Aochi, Hiroyasu Tanaka, Masaru Kito, Yoshiaki Fukuzumi, Masaru Kidoh, Yosuke Komori, Megumi Ishiduki, Junya Matsunami, Tomoko Fujiwara, Ryouhei Kirisawa, Yoshimasa Mikajiri, Shigeto Oota