Abstract: A sensor includes an inflow section into which an analyte liquid flows; a first cover member; a detection element including an element substrate located on an upper surface of the first cover member, and a detection section which is located on an upper surface of the element substrate and is configured to detect a target contained in an analyte liquid; an intermediate cover member including a first upstream portion; a second cover member including a second upstream portion; and a flow channel which is surrounded by the intermediate cover member and the second cover member, is continuous with the inflow section, and extends at least to the detection section. A contact angle ?2a of a lower surface of the second upstream portion of the second cover member with the analyte liquid is smaller than a contact angle ?3 of an upper surface of the detection element with the analyte liquid.

Abstract: In a vehicle equipped with a torque converter (4) having a lock-up clutch (3), learning control for obtaining a learning value (L_n) on the basis of meet-point information, with which the lock-up clutch (3) initiates torque transmission, is carried out. After acquiring the current learning detection value (M_n), a meet-point learning control unit (12c) calculates the current detection error (E_n) on the basis of the difference between the current learning detection value (M_n) and the previous learning value (L_(n?1)) that is stored. When the current and previous detection errors (E_n) and (E_n?1) have the same plus/minus sign, the current learning value correction amount is set to a larger value if the absolute value |(E_n?1)| of the previous detection error (E_n?1) is large than if the absolute value |(E_n?1)| is small. The sum of the previous learning value (L_(n?1)) and the current learning value correction amount is set as the present learning value (L_n).

Abstract: A control device for a continuously variable transmission mechanism of a vehicle includes: a stepwise variable transmission mechanism which is disposed in series with the continuously variable transmission mechanism, and which has at least two or more forward gear stages; and a controller configured to increase the belt capacities to be greater than the belt capacity set when an accelerator opening degree is zero, at least in a time period from a timing when the accelerator opening degree becomes zero, to a timing when a braking force is generated by a depression of a brake pedal, the controller being configured to set an increase amount with respect to the belt capacity set when the accelerator opening degree is zero, to a smaller value as a transmission gear ratio of the stepwise variable transmission mechanism is higher.

Abstract: In a vehicle on which a torque converter having a lock-up clutch is mounted between an engine and a transmission, a meet point learning controller is provided to perform learning control for obtaining a learning value based on information on a meet point at which the lock-up clutch starts torque transmission. The meet point learning controller estimates a LU transmission torque based on a difference between an engine torque signal value and a torque converter transmission torque when the lock-up clutch moves from a non-engaged state to an engaged state during traveling of the vehicle, and uses, as the meet point information, a meet point detection pressure at a time when the LU transmission torque estimated value is determined to have entered an upward trend.

Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Abstract: The present invention provides a surface acoustic wave sensor capable of suitably controlling the flow of a liquid sample onto IDT electrodes. A surface acoustic wave sensor 1 has a piezoelectric substrate, a first IDT electrode and a second IDT electrode which are located on the upper surface of the piezoelectric substrate and are separated from each other while sandwiching a detection part (detection region) on the piezoelectric substrate there between, and the cover which forms the space being on the first IDT electrode, second IDT electrode, and detection part and straddling them. On the lower surface of the cover, the detection part-facing surface (lower surface of the film) facing the detection part has a smaller contact angle to the liquid sample than that of a pair of electrode-facing surfaces (lower surface of the cover body) facing the first IDT electrode and second IDT electrode.

Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Abstract: A hydraulic pressure control device for a continuously variable transmission of a vehicle which a continuously variable transmission mechanism; a stepwise variable transmission mechanism; a shift control means, the hydraulic pressure control device includes: the shift control means including a line pressure control section configured to increase the line pressure to be greater than the line pressure before a generation of an oil vibration when the oil vibration is generated in at least one of actual hydraulic pressures of the primary pressure and the secondary pressure, and the line pressure control section being configured to continue the increase of the line pressure until the shift of the stepwise variable transmission mechanism is finished when the stepwise variable transmission is shifted in a state where the line pressure is increased.

Abstract: Provided are a novel alicyclic ester compound and a method for producing a compound of general formula (1) at a high yield from a compound of general formula (2) and a compound of general formula (3). An adamantane compound expressed by general formula (2) and a hydroxyalkyl (meth)acrylate ester compound expressed by general formula (3) are reacted with each other by use of a dehydration condensation agent as a catalyst to obtain an alicyclic ester compound expressed by general formula (1).

Abstract: Provided are a resist and a compound for the resist improving the sensitivity, the resolution and the line edge roughness (LER) in a good balance without spoiling basic properties of a chemical amplification resist such as pattern shape, dry etching resistance, heat resistance and the like. Provided are a method for producing an alicyclic ester compound expressed by general formula (1), an alicyclic ester compound expressed by general formula (1), a (meth)acrylic copolymer obtained by polymerization of the alicyclic ester compound, and a photosensitive resin composition containing the (meth)acrylic copolymer. A method for producing an alicyclic ester compound expressed by general formula (1) includes reacting an adamantane compound expressed by general formula (2) with hydroxyalkylamine expressed by general formula (3) to produce an adamantaneamide compound expressed by general formula (4), and then reacting the adamantaneamide compound expressed by general formula (4) with (meth)acrylic acid.

Abstract: A detection method of a detection target contained in a sample is provided. In addition, a detection device for detecting a detection target contained in a sample. A detection method includes a first detection step of acquiring a detection value from a first signal value measured in a first measurement step and a second signal value measured in a second measurement step. A detection device includes a first detecting section which acquires a detection value from a first signal value measured in a first measurement section and a second signal value measured in a second measurement section.

Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Abstract: CVT controller has rotation speed sensors detecting driving and driven wheel rotation speed; driving and driven wheel speed difference detection unit detecting wheel speed difference ?vfr; and bad road judgment unit judging that road is bad road when ?vfr is first value ?vfr_br or greater. CVT controller further has first belt clamping force increase unit increasing belt clamping force in case where road is judged to be bad road, as compared with case where road is not judged to be bad road; vibration detection unit detecting vehicle speed vibration fvsp; and second belt clamping force increase unit increasing belt clamping force when ?vfr is second value ?vfr_psec or greater or when fvsp is third value fvsp_psec or greater in case where road is not judged to be bad road, as compared with case where ?vfr is less than ?vfr_psec and case where fvsp is less than fvsp_psec.

Abstract: The present invention provides a resist or a compound for use as a resist, which is highly sensitive and well-balanced without losing the fundamental physical properties required as a chemically amplified resist (e.g., resolution, line edge roughness (LER)). The present invention is directed to a (meth)acrylate compound represented by general formula (1) and a process for preparation thereof, as well as a (meth)acrylic copolymer obtainable by polymerization of the (meth)acrylate compound of general formula (1) and a photosensitive resin composition thereof: (wherein R1 represents a hydrogen atom or a methyl group, R2 represents a linear or branched alkyl group containing 2 to 4 carbon atoms, and each R3 may be the same or different and represents a group represented by the following formula (2) or (3), etc.) (provided that formulae (2) and (3) are as defined in the specification of the present application).

Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Abstract: As a mode switching shift line when a sub-transmission mechanism is switched from a first-speed to a second-speed, a first mode switching shift line, which prioritizes a learning of a hydraulic pressure with which a Low brake starts to slip and a learning of a hydraulic pressure with which a High clutch starts to transmit a torque, or a second mode switching shift line, which is a shift line in a Low side with respect to the first mode switching shift line and prioritizes a fuel efficiency of an engine is selected, and the sub-transmission mechanism is switched from the first-speed to the second-speed on the basis of the selected mode switching shift line.

Abstract: A semiconductor memory device includes a memory plane including a plurality of electrode layers stacked on a substrate and a semiconductor layer extending through the plurality of electrode layers in a stacking direction thereof, a circuit provided on the substrate around the memory plane, a first insulating layer covering the circuit, and a second insulating layer including a first portion and a second portion between the substrate and the first insulating layer. The first portion is provided along an outer edge of the memory plane, and the second portion is spaced from the first portion and is provided on the circuit side. The first insulating layer includes a part in contact with the substrate between the first portion and the second portion, and the first insulating layer blocks a diffusion of hydrogen radicals with a higher rate than the second insulating layer.

Abstract: A biosensor, including: a first cover member comprising an element-accommodating recess in an upper face thereof; a detection element using a surface acoustic wave, the detection element including an element substrate accommodated in the element-accommodating recess, and at least one detection unit located on an upper face of the element substrate configured to perform detection of an analyte; and a second cover member joined to the first cover member and covering the detection element, and including an inflow port from which the analyte flows in and a groove which extends from the inflow port to at least above the at least one detection unit and constitutes a capillary.

Abstract: A sensor includes an inflow section into which an analyte liquid flows; a first cover member; a detection element including an element substrate located on an upper surface of the first cover member, and a detection section which is located on an upper surface of the element substrate and is configured to detect a target contained in an analyte liquid; an intermediate cover member including a first upstream portion; a second cover member including a second upstream portion; and a flow channel which is surrounded by the intermediate cover member and the second cover member, is continuous with the inflow section, and extends at least to the detection section. A contact angle ?2a of a lower surface of the second upstream portion of the second cover member with the analyte liquid is smaller than a contact angle ?3 of an upper surface of the detection element with the analyte liquid.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.