Abstract: An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

Abstract: In this image recording apparatus, imaging sensor obtains two video signals of different signal charge accumulation periods, in a given signal charge accumulation period which is represented by a field or a frame of a video signal, and the two video signals are recorded on a record medium, whereby a video signal of an object having a wide luminance distribution can be recorded, and as for the image reproducing apparatus, a correcting circuit corrects standard-illuminance video information and high-illuminance video information which are reproduced by a reproducing circuit, the user designates an object illuminance range to be output, through an object illuminance range designating circuit, and a level converter converts the luminance into a luminance level which can be output by a display apparatus or a printer, thereby allowing portions which are largely different in object illuminance, to be selectively displayed or output in reproduction.

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

Abstract: An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: A color filter arrangement (11) is used, in which a plurality of filter units are each made of 2×2 arrangements of red (R), green (G), green (G) and blue (B) color elements. First, signal charges are added up for all pixels belonging to each of a plurality of pixel blocks made of quadratic arrangements of 3×3 of pixels, which are larger than the filter units (2×2 arrangement). Then, compressed color information for each of the pixel blocks is obtained from a result of the addition for each pixel block, taking the 2×2 arrangements of pixel blocks as large filter units.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: Gray level data of boundary pixels that are adjacent to a block boundary in a photoelectric conversion section is stored. Then, a cumulative histogram regarding the number of pixels for different gray levels is produced based on the stored gray level data separately for each block, and a data table representing the correspondence between each gray level before correction and that after correction for the block to be corrected is produced so as to reduce the difference between the cumulative histograms. The data table is stored in a correction data RAM. By using the data table, the outputs of the block to be corrected are non-linearly corrected for different gray levels.

Abstract: In a MOS type sensor including a floating diffusion (FD) amplifier in each pixel, the number of pulse lines is reduced, so as to improve the numerical aperture. For this purpose, a read pulse for a read transistor of a first pixel and a reset pulse for a reset transistor of a second pixel adjacent to the first pixel in a column direction are supplied through a common gate line; a LOW level potential of a drain line connected to a drain region (a region for supplying a pulse voltage to an FD portion through the reset transistor) of the first pixel is set to a potential higher than a potential depth of a photodiode of the first pixel in resetting the second pixel; and potential below the gate of the reset transistor of the first pixel obtained by applying a LOW level voltage to this gate is set to a potential higher than the LOW level potential of the drain line.

Abstract: The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.

Abstract: The solid-state image pickup device permitting parallel readout having an image pickup section partitioned into strip blocks and a readout amplifier for each block further has: an input source; and a marker signal generation section for generating marker signals for correction of outputs of the readout amplifiers. The marker signal generation section has a marker charge storage portion made of capacitors for respectively storing an amount of charge corresponding to the potential at the input source. The marker signals having a same charge amount generated in the marker signal generation section are read through vertical CCDs of two adjacent blocks and corresponding horizontal CCDs and readout amplifiers sequentially.

Abstract: A method and apparatus for driving a solid state image pickup device. The method and apparatus include setting a first signal charging period and a second signal charging period during one frame or field of a video signal for each one of a plurality of unit pixels. The second signal charging period is shorter than the first signal charging period. A first signal charge is produced during the first signal charging period and a second signal charge is produced during the second signal charging period. It is judged whether the first signal charge is saturated or not saturated. Then based on this judgment an input light amount is determined. The input light amount is determined using only the second signal charge when the first signal charge is saturated. The input light amount is determined using only the first signal charge when the first signal charge is not satrated.

Abstract: Incident light is photoelectrically converted in a one-unit pixel photoelectric converter section 300, while an electronic shuttering time two pixel mixture signal charge 301, a field signal charge 1 302, and a field signal charge 2 303, are transferred respectively with 8-phase clock by HCCD1 304, HCCD2 305, and HCCD3 306. After passing through a CDS & clamp circuit 307, they are subjected to a decision of signal saturation by a signal decision circuit 309. After having their outputs selected by a signal selector circuit 308, they are subjected to calculating processing in a signal processing circuit 310 to execute image signal reproduction.

Abstract: The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

Abstract: In this image recording apparatus, imaging sensor obtains two video signals of different signal charge accumulation periods, in a given signal charge accumulation period which is represented by a field or a frame of a video signal, and the two video signals are recorded on a record medium, whereby a video signal of an object having a wide luminance distribution can be recorded,and as for the image reproducing apparatus, a correcting circuit corrects standard-illuminance video information and high-illuminance video information which are reproduced by a reproducing circuit, the user designates an object illuminance range to be output, through an object illuminance range designating circuit, and a level converter converts the luminance into a luminance level which can be output by a display apparatus or a printer, thereby allowing portions which are largely different in object illuminance, to be selectively displayed or output in reproduction.

Abstract: A solid-state imaging apparatus includes a solid-state imaging device and a signal processing circuit. The solid-state imaging device includes: a plurality of photoelectric converting sections provided with color filters having different spectroscopic characteristics, and each converting light incident thereon into a charge and accumulating the charge, and a plurality of vertical charge transfer sections for vertically transferring the charge read from each of the photoelectric converting sections. A plurality of reading operations to read the charges accumulated in the photoelectric converting sections to the plurality of the vertical charge transfer sections are performed within a time duration for scanning an image for one image plane, and the charges read from the photoelectric converting sections are transferred through the vertical charge transfer section separately for each of the reading operations.

Abstract: A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.

Abstract: A method and apparatus for driving a solid state image pickup device. The method and apparatus include setting a first signal charging period and a second signal charging period during one frame or field of a video signal for each one of a plurality of unit pixels. The second signal charging period is shorter than the first signal charging period. A first signal charge is produced during the first signal charging period and a second signal charge is produced during the second signal charging period. It is judged whether the first signal charge is saturated or not saturated. Then based on this judgement an input light amount is determined. The input light amount is determined using only the second signal charge when the first signal charge is saturated. The input light amount is determined using only the first signal charge when the first signal charge is not saturated.