Abstract: A solid-state imaging apparatus includes a solid-state imaging device and a signal processing circuit. The solid-state imaging device includes: a plurality of photoelectric converting sections provided with color filters having different spectroscopic characteristics, and each converting light incident thereon into a charge and accumulating the charge, and a plurality of vertical charge transfer sections for vertically transferring the charge read from each of the photoelectric converting sections. A plurality of reading operations to read the charges accumulated in the photoelectric converting sections to the plurality of the vertical charge transfer sections are performed within a time duration for scanning an image for one image plane, and the charges read from the photoelectric converting sections are transferred through the vertical charge transfer section separately for each of the reading operations.

Abstract: To present a holonic rhythm generator capable of generating rhythm following free changes by transmitting the intent of tempo change from the action of man to rhythm generator in real time, or, to the contrary, guiding the action rhythm of man gradually by the rhythm generator. To achieve the object, the device has a rhythm generator having such constitution described by a nonlinear vibration equation which is a van der Pol's formula a constant portion of which is replaced by a cubic expression, and a fixed rhythm generator and action rhythm detector for generating an input signal of the rhythm generator, in which a specific relation is given between the fixed rhythm generator and action rhythm detector.

Abstract: A very high sensitive solid state imager is realized by employing a multiplication process which includes avalanche multiplication of charges as generated by an incident light at each of several optical to electrical converting components (hereafter referred to as a photosite). Thus, the functions of a high speed electron shutter are obtained. Notwithstanding a high sensitivity, a reduced supply voltage for avalanche multiplication can be realized by laminating a transparent electrode of poly-silicon or ITO on a photosite, applying an avalanche multiplication voltage thereupon through its capacity coupling, and simultaneously applying a negative voltage on a read-out gate during a readout time. Furthermore, a reduced readout voltage can also be realized by laminating a transparent electrode of poly-silicon or ITO, on a photosite, and applying a voltage of polarity opposite to that applied during an avalanche multiplication time.

Abstract: An image pickup device capable of controlling the quantity of incident light. The device has a liquid crystal layer with upper and lower transparent electrodes disposed over a photosite. A fixed bias voltage is applied to the upper transparent electrode, while another voltage is applied to the lower transparent layer. The photosite converts incident light into electrons, and then stores a signal charge produced by the conversion of the incident light. A variation in the stored signal charge varies the voltage applied to the lower transparent layer. Thus, the liquid crystal layer modulates the incident light in response to a variation of the signal charge quantity.

Abstract: A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.