Abstract: [PROBLEM] To provide an object lens such that the degradation of the optical properties of the object lens due to temperature change can be minimized, and a light pickup device using the same. [SOLUTION] An object lens R has lens surfaces R1, R2 which converges BD light, DVD light and CD light with prescribed numerical apertures into spots, and an antireflective film R1a formed on the lens surface R1. The lens surface R1 includes a BD exclusive region A1, a two-wavelength common region A2, and a three-wavelength common region A3. Diffractive structures P1, P2 and P3 are formed respectively for the BD exclusive region A1, the two-wavelength common region A2 and the three-wavelength common region A3. The antireflective film R1a is designed such that the transmittance for BD light is largest in the range of the two-wavelength common region A2.

Abstract: An engine mount for use in a power unit vibration damping support structure configured to be mounted on a transmission side in a state without a distributed support load of a weight of the power unit being applied, the engine mount including: an inner shaft member; an outer tube member arranged separated to an outer circumference side of the inner shaft member; and a main rubber elastic body fixed to the inner shaft member while being attached to the outer tube member non-adhesively such that the inner shaft member and the outer tube member are elastically connected by the main rubber elastic body, wherein the outer tube member is configured to be attached to the power unit, and the inner shaft member is configured to be attached to a vehicle body.

Abstract: A semiconductor device according to an embodiment of the present invention includes a SiC substrate, an AlN layer provided on the SiC substrate and having a maximum valley depth Rv of 5 nm or less in an upper surface, a channel layer provided on the AlN layer and composed of a nitride semiconductor, an electron supply layer provided on the channel layer and having a greater band gap than the channel layer, and a gate electrode, a source electrode and a drain electrode provided on the electron supply layer.

Abstract: The semiconductor device includes a SiC substrate; an aluminum nitride layer provided on the substrate and having an island-shaped pattern consisting of plural islands: a channel layer provided on the AlN layer and comprising a nitride semiconductor; an electron supplying layer provided on the channel layer and having a band gap larger than that of the channel layer; and a gate, source and drain electrodes on the electron supply layer. The AlN layer has an area-averaged circularity Y/X of greater than 0.2. Y is a sum of values obtained by multiplying circularities of the plural islands by areas of the plural islands respectively, X is a sum of the areas of the plural islands. The circularity are calculated by a formula of (4?×area)/(length of periphery)2 where the area and the length of periphery are an area and a length of periphery of each island.

Abstract: A vibration damping device including a first mounting member arranged on a lower side of a second mounting member, the first and second mounting members being elastically connected by a main rubber elastic body, and an outer bracket arranged on the lower side of the second mounting member. A coupling part is constituted by engagement between a bottom edge of the second mounting member and a top edge of the outer bracket, and the second mounting member is configured to be attached to a vibration source via the outer bracket. The outer bracket is arranged in opposition to the first mounting member in an axis-perpendicular direction, and an axis-perpendicular stopper member that regulates relative displacement between the first and second mounting members in the axis-perpendicular direction is constituted by contact between the first mounting member and the outer bracket.

Abstract: A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer. The SiC substrate has an energy difference greater than 0.67 eV but less than 1.43 eV; the AlN layer has a thickness less than 50 nm; and the GaN layer has a thickness less than 1.

Abstract: A fluid-filled vibration damping device including a second orifice passage and a third orifice passage tuned to a lower frequency than the second orifice passage, and an actuator including an output portion facing openings of the second and third orifice passages on a side of an equilibrium chamber via a flexible film. The flexible film obstructs the openings of the second and third orifice passages when the output portion comes into contact against a partition member so that the third orifice passage is blocked while the second orifice passage is substantially placed in communication owing to a center recess of the output portion permitting deformation of the flexible film. Meanwhile, the flexible film is separated from the openings of the second and third orifice passages when the output portion is separated from the partition member so that the two orifice passages are placed in communication.

Abstract: A fluid-filled vibration damping device including: a pressure-receiving chamber and an equilibrium chamber disposed on either side of a partition plate, while being connected through a first orifice passage; a moveable film arranged to either a pressure-receiving chamber side or an equilibrium chamber side of the partition plate while being spaced away therefrom to define therebetween an intermediate chamber; a second orifice passage connecting the intermediate chamber and one of the pressure-receiving and the equilibrium chambers while being tuned to higher frequency than the first orifice passage; and a flow straightening plate arranged in opposition to the moveable film at least at one of the intermediate chamber side and an opposite side thereof, the flow straightening plate having a plurality of flow straightening apertures opening towards the moveable film and furnished with a flow limiting member.

Abstract: An optical pickup apparatus includes: first and second laser diodes to emit first and second laser beams having first and second wavelengths for reading signals recorded in first and second optical discs, respectively; a first objective lens configured to condense the first laser beam onto the signal recording layer of the first optical disc; a second objective lens arranged, along with the first objective lens, in a radial direction of the first and the second optical discs, the second objective lens configured to condense the second laser beam onto the signal recording layer of the second optical disc; a first optical system configured to guide the first laser beam from the first laser diode to the first objective lens; and a second optical system configured to guide the second laser beam from the second laser diode to the second objective lens independently of the first optical system.

Abstract: Provided is an active vibration or noise suppression system capable of converging vibration or noise more quickly. A sine wave control signal y(n) is constituted by frequency of a vibration or noise source, and an amplitude filter coefficient a(n) and a phase filter coefficient ?(n) as an adaptive filter coefficient. The sine wave control signal y(n) is expressed by a sine wave having an amplitude component and a phase component, and each of an amplitude update term ?a(n+1) and a phase update term ??(n+1) includes a sine wave or cosine wave term having an amplitude component and a phase component. Then, the phase component of the sine wave control signal y(n) is multiplied by a coefficient other than 1, or the phase component of the sine wave or cosine wave term of each of the amplitude update term ?a(n+1) and the phase update term ??(n+1) is multiplied by a coefficient other than 1. This achieves fast convergence of vibration or noise.

Abstract: A fluid-filled type vibration damping device wherein a low-frequency orifice passage and at least one high-frequency orifice passage are formed in a partition member, which is supported by a second mounting member; a valve body is disposed at least at one opening of the high-frequency orifice passage and is provided with a spring member that in a nonloaded state positions the valve body away from the opening of the high-frequency orifice passage to hold the high-frequency orifice passage in an open state; and, at times of vibration input, the valve body is adapted to block the high-frequency orifice passage in opposition to a holding force of the spring member.

Abstract: An optical-pickup apparatus includes: a laser diode; an objective lens; a diffraction grating; a photodetector including main-beam-, first-sub-beam-, and second-sub-beam-light-receiving portions; a quarter-wave plate having either a second area allowing a reflected-laser beam to pass therethrough without polarization or a third area allowing the reflected beam to pass therethrough at a polarization angle different from that of the first area; and a polarizing member having a separate-light-amount ratio set therefor with respect to the reflected beams passing through the second or third area and an area excluding the second or third area from the first area, such that proportions of the reflected beams passing therethrough toward the photodetector are different, thereby decreasing an irradiation level when the first- and second-sub-beam-light-receiving portions are irradiated, as stray light, with the reflected beam reflected from either one, not subjected to a signal-reading operation, of the first- and secon

Abstract: An optical-pickup apparatus includes: a single-wavelength-laser diode to emit a first-laser beam; a two-wavelength-laser diode to emit second- and third-laser beams; an objective lens; a photodetector to be irradiated with first- to third-reflected-light beams of the first- to third-laser beams reflected from the signal-recording layers of first- to third-optical discs; an aberration-correcting plate to guide the second- and third-laser beams toward the lens, and correct astigmatism of the reflected-light beams, and guide the astigmatism-corrected-reflected-light beams toward the photodetector; a semitransparent mirror to guide, toward the lens, the first-laser beam and the second- and third-laser beams having been guided by the aberration-correcting plate, and guide the reflected-light beams toward the aberration-correcting plate; a quarter-wave plate to convert the first- to third-laser beams from linearly-polarized light into circularly-polarized light, and convert the reflected-light beams from circularly

Abstract: A method of manufacturing a synthetic resin lens, comprising: adjusting a degree of change in transmittance of a lens member made of synthetic resin for a blue violet laser beam with accumulated application of the blue violet laser beam, by applying to the lens member an electromagnetic wave shorter in wavelength than the blue violet laser beam.

Abstract: A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.

Abstract: An optical-pickup apparatus includes: a laser diode; an objective lens; a diffraction grating; a photodetector including main-beam-, first-sub-beam-, and second-sub-beam-light-receiving portions; a quarter-wave plate having either a second area allowing a reflected-laser beam to pass therethrough without polarization or a third area allowing the reflected beam to pass therethrough at a polarization angle different from that of the first area; and a polarizing member having a separate-light-amount ratio set therefor with respect to the reflected beams passing through the second or third area and an area excluding the second or third area from the first area, such that proportions of the reflected beams passing therethrough toward the photodetector are different, thereby decreasing an irradiation level when the first- and second-sub-beam-light-receiving portions are irradiated, as stray light, with the reflected beam reflected from either one, not subjected to a signal-reading operation, of the first- and secon

Abstract: A method of manufacturing a semiconductor device includes growing a first GaN layer on a SiC substrate, and forming a second GaN layer on the first GaN layer, the second GaN layer being grown under such conditions that a ratio of a vertical growth rate to a horizontal growth rate is lower than that in the growth of the first GaN layer.

Abstract: An objective lens formed of a synthetic resin material having characteristics of substantially not reducing transmittance of the objective lens when a first laser beam having a first wavelength passes through the objective lens, and reducing the transmittance according to an elapsed time to apply a second laser beam when the second laser beam having a second wavelength shorter than the first wavelength and longer than a wavelength of ultraviolet light passes through the objective lens, the objective lens being irradiated with the ultraviolet light in advance for a predetermined time such that a change in the transmittance for the second laser beam is set within a predetermined range.

Abstract: A fluid-filled type vibration damping device wherein a low-frequency orifice passage and at least one high-frequency orifice passage are formed in a partition member, which is supported by a second mounting member member; a valve body is disposed at least at one opening of the high-frequency orifice passage and is provided with a spring member that in a nonloaded state positions the valve body away from the opening of the high-frequency orifice passage to hold the high-frequency orifice passage in an open state; and, at times of vibration input, the valve body is adapted to block the high-frequency orifice passage in opposition to a holding force of the spring member.

Abstract: An electromagnetic actuator having: a stator and a movable member disposed in a central hole of a coil member of the stator movable in an axial direction; a coupling rod fixed to the movable member; and an elastic stopper having a ring shaped sealing unit at its outer periphery part, a first stopper unit at its center part, a coupling unit that mutually couples the sealing unit and the first stopper unit, and second stopper units located radially between the sealing unit and the first stopper unit at respective circumferential positions. The sealing unit is compressed between the bottom wall of a housing and a lid member to form a sealing mechanism that fluid-tightly close an opening of an adjustment hole. The first stopper unit axially faces the coupling rod bottom with a first separation distance, and the second stopper units axially face the movable member bottom with a second separation distance greater than the first.