Abstract: An audio signal high frequency component controlled in terms of directivity is reproduced, or an audio signal high frequency component compensated in terms of frequency characteristic or controlled in terms of directivity is reproduced, such that the reflected sound comes from a direction in which the high frequency component is intended to be localized. The sound pressure in a seat where a desired localization effect is not provided due to the arrangement of speakers is compensated such that the interaural amplitude level in the seat is equal to that of another seat. Thus, an equivalent level of localization effect is provided in a plurality of seats, especially for an audio signal high frequency component, without significantly increasing the number of the speakers.

Abstract: This automatic clutch control device selects a normal mode when a road friction coefficient is not less than 0.3 at a disconnecting operation starting point (time t1), selects a little low-speed mode when it is not less than 0.1 but less than 0.3 and selects a low-speed mode when it is less than 0.1. Further, when a vehicle stabilizing control such as a traction control or the like is not executed at the time t1, this device selects the normal mode, while when a vehicle stabilizing control is executed at the time t1, it selects the low-speed mode. Moreover, this device selects a high-speed mode when the vehicle is in a sports running mode at the time t1, while selects the normal mode when the vehicle is not in the sports running mode. A connecting operation of a clutch is performed with a speed corresponding to the selected mode in an automatic clutch connecting/disconnecting control by a clutch connecting/disconnecting actuator upon executing a gear-shift control.

Abstract: The automatic clutch control device controls, regardless of the gear-shift operation, the clutch to be brought into a half-clutch state or to a perfect disconnecting state according to a running state of a vehicle from the following five viewpoints deceleration slip amount of driving wheels RL and RR; a convergence time of a driving wheel speed to the driving wheel in a pressure-down mode during a vehicle stabilizing control (for example, ABS control); a continuation time of a judder vibration; whether the vehicle is in a spinning state or not; and whether there is a possibility that an engine stall occurs during a traction control. As a result, this device can attain at least one or more objects of the improvement in stability of the vehicle, improvement in precision of the vehicle stabilizing control, improvement of comfortableness of the occupant and prevention of the occurrence of the engine stall.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an even number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: The automatic clutch control device according to the present invention controls, regardless of the gear-shift operation, the clutch 24 to be brought into a half-clutch state or to a perfect disconnecting state according to a running state of a vehicle from the following five viewpoints: deceleration slip amount of driving wheels RL and RR; a convergence time of a driving wheel speed to the driving wheel in a pressure-down mode during a vehicle stabilizing control (for example, ABS control); a continuation time of a judder vibration; whether the vehicle is in a spinning state or not; and whether there is a possibility that an engine stall occurs during a traction control. As a result, this device can attain at least one or more objects of the improvement in stability of the vehicle, improvement in precision of the vehicle stabilizing control, improvement of comfortableness of the occupant and prevention of the occurrence of the engine stall.

Abstract: This automatic clutch control device selects a normal mode when a road friction coefficient is not less than 0.3 at a disconnecting operation starting point (time t1), selects a little low-speed mode when it is not less than 0.1 but less than 0.3 and selects a low-speed mode when it is less than 0.1. Further, when a vehicle stabilizing control such as a traction control or the like is not executed at the time t1, this device selects the normal mode, while when a vehicle stabilizing control is executed at the time t1, it selects the low-speed mode. Moreover, this device selects a high-speed mode when the vehicle is in a sports running mode at the time t1, while selects the normal mode when the vehicle is not in the sports running mode. A connecting operation of a clutch is performed with a speed corresponding to the selected mode in an automatic clutch connecting/disconnecting control by a clutch connecting/disconnecting actuator upon executing a gear-shift control.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers conducted in the i-layer in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Then quantum-wave interference layers and carrier accumulation layers are formed in series.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an even number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. Thicknesses of the first and the second layers in the electron reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of electrons in each of the first and the second layers, and each thicknesses of the first and the second layers in the hole reflecting layer are determined by multiplying by an odd number one fourth of a quantum-wave wavelength of holes in each of the first and the second layers. A luminous efficiency of the LED is improved by electron-hole pairs.

Abstract: A field effect transistor having a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W, and the quantum-wave interference layer is formed in a region adjacent to a channel. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B, which exist around the lowest energy level of the second layer B. The quantum-wave interference layer functions as a carrier reflecting layer, and enable to prevent leakage current from a source to a region except a drain.

Abstract: A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

Abstract: A light-emitting device comprising an emission layer which has a single layer structure is formed. The emission layer is sandwiched by a first quantum-wave interference layer constituted by plural periods of a pair of a first layer and a second layer, the second layer having a wider band gap than the first layer, and a second quantum-wave interference layer constituted by plural periods of a pair of a third layer and a fourth layer, the fourth layer having a wider band gap than the third layer. The first quantum-wave interference layer functions as an electron reflection layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. The second quantum-wave interference layer functions as an electron transmission layer, and its thickness is determined by multiplying by an odd number one fourth of quantum-wave wavelength of the injected electrons. As a result, luminous efficiency of the device is improved.

Abstract: A light-emitting diode comprising a quantum-wave reflection layer for electrons, a quantum-wave transmission layer for electrons, and an emission layer formed between the quantum-wave reflection layer and th e quantum-wave transmission layer is used as a photocoupler. Compared with a commercial product having a response velocity of 20 MHz, a response velocity of the light-emitting diode of the present invention is improved to be 100 MHz to 200 MHz. The quantum-wave reflection layer for electrons and the quantum-wave transmission layer for electrons are formed to have thicknesses of one fourth and a half of quantum wave of electrons, respectively.

Abstract: A transistor having an electron quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B in a p-layer of a pn junction structure. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B, the carriers existing around the lowest energy level of the second layer B. The quantum-wave interference layer functions as an electron reflecting layer, and enables to lower a dynamic resistance of the transistor notably. An amplification factor of a bipolar transistor of an npn junction structure, having the electron reflecting layer is improved compared with a transistor without an electrode reflecting layer. Similarly, a transistor having a hole reflecting layer, which has a larger amplification factor, can be obtained.

Abstract: A variable capacity device having an nin, pip, nn−p, np−p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of a wavelength of a quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for changing energy band suddenly, is formed at interfaces between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then a voltage-variation rate of capacity of the variable capacity device is improved.

Abstract: A semiconductor device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and middle layers (carrier accumulation layers) C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers conducted in the i-layer in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Then quantum-wave interference layers and carrier accumulation layers are formed in series.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

Abstract: A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer b is determined by multiplying by odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B. A &dgr; layer sharply varying in band gap energy from the first and second layers is formed at every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. A plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then, the I-V characteristic of the diode indicates that, for values of an applied backward voltage, a backward electric current can flow rapidly.