Abstract: In a printing system capable of selectively performing duplex printing and simplex printing, a switching unit switches a sheet travel path between a first path and a second path parallel to each other, and reverses the sides of a sheet that passes along the first path. In the duplex printing, a sheet is printed on a first side by a first printing apparatus, reversed by the switching unit, and printed on a second side reverse of the first side by a second printing apparatus. In the simplex printing, only one side of a sheet is printed by the first printing apparatus and/or second printing apparatus. First and second input units introduce sheets into the first and second paths, respectively; and first and second output units receive printed sheets that have traveled along the first and/or second paths.

Abstract: An electronic blood pressure meter includes a cuff, an inflation control unit that controls a pump for outputting a fluid into the cuff so that a pressure in the cuff is increased at an inflation speed target in accordance with a driving voltage, a pressure detection unit that detects a cuff pressure signal indicating a cuff pressure, a blood pressure calculation unit that calculates a blood pressure value based on a pulse wave superimposed on the detected cuff pressure signal, and a target changing unit that varies the inflation speed target during an inflation process in which the cuff pressure begins to increase at an initial inflation speed target and continues to increase. The target changing unit varies the inflation speed target so that the driving voltage measured during the inflation process stays within a voltage range corresponding to a range in which the pump is capable of output.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: A manual pressurization electronic sphygmomanometer includes a specific component detection unit for detecting a synthetic wave of a manual fluctuation wave and a pressure pulse wave as a specific component from a cuff pressure signal obtained during pressurization; a derivation processing unit for deriving a pressurization target value based on the detection result of the specific component detection unit; and a display unit for notifying to urge pressurization up to the pressurization target value. The derivation processing unit calculates a pulse wave component based on the waveform before and after the specific component and the waveform of the specific component, and determines a value obtained by adding a predetermined value to the systolic blood pressure value estimated based on the amplitude of the pulse wave component as the pressurization target value.

Abstract: An image processing method includes the steps of calculating, with respect to a processing-target pixel in an input image signal, a concentric aberration correction amount for concentric aberration that is a component of magnification chromatic aberration, the concentric aberration causing a color shift to occur in a concentric manner from the center of an image, calculating, with respect to the processing-target pixel, a uniform aberration correction amount for uniform aberration that is a component of magnification chromatic aberration, the uniform aberration causing a color shift direction and a color shift amount to uniformly occur on a whole image, and correcting a pixel value of the processing-target pixel on the basis of the calculated concentric aberration correction amount and the calculated uniform aberration correction amount.

Abstract: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is formed over each isolation region, at least partially overlying air to provide an upper endpoint for the corresponding air gap. The caps may be formed at least partially along the sidewalls of adjacent charge storage regions. In various embodiments, selective growth processes are used to form capping strips over the isolation regions to define the air gaps. Word line air gaps that are elongated in a row direction between adjacent rows of storage elements are also provided.

Abstract: A memory device and a method of making the memory device are provided. A first dielectric layer is formed on a substrate, a floating gate is formed on the first dielectric layer, a second dielectric layer is formed on the floating gate, a control gate is formed on the second dielectric layer, and at least one film, including a conformal film, is formed over a surface of the memory device.

Abstract: An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.

Abstract: High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical sidewalls of the metal control gate layer(s). The sidewall spacers encapsulate the metal control gate layer(s) while etching the charge storage material to avoid contamination of the charge storage and tunnel dielectric materials. Electrical isolation is provided, at least in part, by air gaps that are formed in the row direction and/or air gaps that are formed in the column direction.

Abstract: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. At least one cap is formed over each isolation region, at least partially overlying air to provide an upper endpoint for the corresponding air gap. The caps may be formed at least partially along the sidewalls of adjacent charge storage regions. In various embodiments, selective growth processes are used to form capping strips over the isolation regions to define the air gaps. Word line air gaps that are elongated in a row direction between adjacent rows of storage elements are also provided.

Abstract: A method for forming a memory device is provided. A nitride layer is formed over a substrate. The nitride layer and the substrate are etched to form a trench. The nitride layer is trimmed on opposite sides of the trench to widen the trench within the nitride layer. The trench is filled with an oxide material. The nitride layer is stripped from the memory device, forming a mesa above the trench.

Abstract: Air gap isolation in non-volatile memory arrays and related fabrication processes are provided. Electrical isolation between adjacent active areas of a substrate can be provided, at least in part, by bit line air gaps that are elongated in a column direction between the active areas. A blocking layer can be introduced to inhibit the formation of materials in the air gaps during subsequent process steps. The blocking layer may result in selective air gap formation or varying dimension of air gaps at cell areas relative to select gate areas in the memory. The blocking layer may result in a smaller vertical dimension for air gaps formed in the isolation regions at select gate areas relative to cell areas. The blocking layer may inhibit formation of air gaps at the select gate areas in other examples. Selective etching, implanting and different isolation materials may be used to selectively define air gaps.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.

Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).

Abstract: A sphygmomanometer includes a central control unit having a pulse wave detecting section, a pulse wave amplitude calculation section, a pace change calculation section, and a pulse wave amplitude correction section. The pulse wave detecting section detects pulse waves, and the pulse wave amplitude calculation section calculates an amplitude of a pulse wave. The pace change calculation section calculates the amount of change of the increasing/decreasing pace of the cuff pressure between pulse waves based on the difference between the increasing/decreasing pace of the cuff pressure during a period of the pulse wave and the increasing/decreasing pace of the cuff pressure during a period of a preceding pulse wave. The pulse wave amplitude correction section corrects the amplitude of the pulse wave based on the amount of change of the increasing/decreasing pace of the cuff pressure. A blood pressure value is determined based on the corrected amplitude of the pulse wave.

Abstract: High-density semiconductor memory utilizing metal control gate structures and air gap electrical isolation between discrete devices in these types of structures are provided. During gate formation and definition, etching the metal control gate layer(s) is separated from etching the charge storage layer to form protective sidewall spacers along the vertical sidewalls of the metal control gate layer(s). The sidewall spacers encapsulate the metal control gate layer(s) while etching the charge storage material to avoid contamination of the charge storage and tunnel dielectric materials. Electrical isolation is provided, at least in part, by air gaps that are formed in the row direction and/or air gaps that are formed in the column direction.

Abstract: Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.

Abstract: Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.

Abstract: A blood pressure measurement device includes a measurement air bladder for being wrapped around a body part to be measured, a compression member that compresses the measurement air bladder from the outside of the measurement air bladder against the body part to be measured; an inflation member for inflating the measurement air bladder, a deflation member for deflating the measurement air bladder, a blood pressure determination unit that determines a blood pressure during the inflation by the inflation member or during the deflation by the deflation member, and a control unit that causes the compression member to apply a pressure that is higher than or equal to an atmospheric pressure to the measurement air bladder when an internal pressure of the measurement air bladder reaches or falls below a certain pressure due to the deflation by the deflation member.