Patents by Inventor Hiroyuki Matsui

Hiroyuki Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10903434
    Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: January 26, 2021
    Assignee: THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki Matsui, Junichi Takeya
  • Patent number: 10854825
    Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: December 1, 2020
    Assignee: THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki Matsui, Junichi Takeya
  • Patent number: 10509928
    Abstract: An information collection system includes a plurality of radio tags and a reading device. Each of the radio tags stores identification information and includes a sensor, an antenna that receives a carrier wave from the reading device, and a data transmission unit that sends measurement data including the identification information and information obtained by the sensor to the reading device after the carrier wave is received by the antenna. The plurality of radio tags send the identification information and the information obtained by the sensor with different natural periods from the data transmission units. The reading device transmits the carrier wave to each of the radio tags, receives data from each of the radio tags, and obtains the data.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: December 17, 2019
    Assignees: FUJIFILM Corporation, THE UNIVERSITY OF TOKYO
    Inventors: Yoshihisa Usami, Takayoshi Yokoyama, Yuki Owashi, Hiroyuki Matsui, Junichi Takeya
  • Publication number: 20190326522
    Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.
    Type: Application
    Filed: July 3, 2019
    Publication date: October 24, 2019
    Applicant: THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki MATSUI, Junichi TAKEYA
  • Publication number: 20190005282
    Abstract: An information collection system includes a plurality of radio tags and a reading device. Each of the radio tags stores identification information and includes a sensor, an antenna that receives a carrier wave from the reading device, and a data transmission unit that sends measurement data including the identification information and information obtained by the sensor to the reading device after the carrier wave is received by the antenna. The plurality of radio tags send the identification information and the information obtained by the sensor with different natural periods from the data transmission units. The reading device transmits the carrier wave to each of the radio tags, receives data from each of the radio tags, and obtains the data.
    Type: Application
    Filed: July 23, 2018
    Publication date: January 3, 2019
    Applicants: FUJIFILM Corporation, THE UNIVERSITY OF TOKYO
    Inventors: Yoshihisa USAMI, Takayoshi YOKOYAMA, Yuki OWASHI, Hiroyuki MATSUI, Junichi TAKEYA
  • Patent number: 10162989
    Abstract: A sensing system includes an electronic tag and a reading device that transmits and receives information to and from the electronic tag. The reading device includes a transmission unit that sends an alternating-current radio wave including a high-frequency component and a low-frequency component. The electronic tag does not include a power supply and includes a receiving unit that obtains a power supply voltage from the high-frequency component of the alternating-current radio wave and obtains a clock signal from the low-frequency component and a return unit that maintains a maximum amplitude of the clock signal and sends a combination of information and the clock signal as a return signal. The reading device further includes a processing unit that decodes the return signal sent from the electronic tag on the basis of the clock signal.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: December 25, 2018
    Assignees: FUJIFILM Corporation, TOPPAN FORMS CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Yoshihisa Usami, Takayoshi Yokoyama, Yuki Owashi, Hiroyuki Matsui, Junichi Takeya
  • Publication number: 20180307872
    Abstract: A sensing system includes an electronic tag and a reading device that transmits and receives information to and from the electronic tag. The reading device includes a transmission unit that sends an alternating-current radio wave including a high-frequency component and a low-frequency component. The electronic tag does not include a power supply and includes a receiving unit that obtains a power supply voltage from the high-frequency component of the alternating-current radio wave and obtains a clock signal from the low-frequency component and a return unit that maintains a maximum amplitude of the clock signal and sends a combination of information and the clock signal as a return signal. The reading device further includes a processing unit that decodes the return signal sent from the electronic tag on the basis of the clock signal.
    Type: Application
    Filed: June 29, 2018
    Publication date: October 25, 2018
    Applicants: FUJIFILM Corporation, TOPPAN FORMS CO., LTD., THE UNIVERSITY OF TOKYO
    Inventors: Yoshihisa USAMI, Takayoshi YOKOYAMA, Yuki OWASHI, Hiroyuki MATSUI, Junichi TAKEYA
  • Publication number: 20180145266
    Abstract: An organic semiconductor element functions as a strain sensor, and includes a substrate and an organic semiconductor layer formed on the substrate as a single-crystal thin film of an organic semiconductor that is a polycyclic aromatic compound with four or more rings or a polycyclic compound with four or more rings including one or a plurality of unsaturated five-membered heterocyclic compounds and a plurality of benzene rings. Since the organic semiconductor layer is formed as the single-crystal thin film, an identical crystal structure is obtained regardless of formation technique. Therefore, when the same strain is given, the same carrier mobility is obtained and uniform property is obtained with respect to the strain. Accordingly, it is possible to provide strain sensors having uniform property.
    Type: Application
    Filed: January 27, 2016
    Publication date: May 24, 2018
    Applicant: THE UNIVERSITY OF TOKYO
    Inventors: Hiroyuki MATSUI, Junichi TAKEYA
  • Patent number: 9202665
    Abstract: Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: December 1, 2015
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyuki Matsui, Osamu Komuro, Makoto Nishihara, Zhaohui Cheng
  • Patent number: 9059407
    Abstract: A method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: June 16, 2015
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
  • Publication number: 20140027635
    Abstract: Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.
    Type: Application
    Filed: November 30, 2011
    Publication date: January 30, 2014
    Inventors: Hiroyuki Matsui, Osamu Komuro, Makoto Nishihara, Zhaohui Cheng
  • Patent number: 8490857
    Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.
    Type: Grant
    Filed: March 31, 2012
    Date of Patent: July 23, 2013
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Hiroyuki Matsui, Hirohisa Matsuki, Koki Otake
  • Publication number: 20130149811
    Abstract: The first object of the present invention is to provide a method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The second object of the present invention is to manufacture a monocrystalline organic semiconductor of which almost the entire region consists of a single monocrystal, by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.
    Type: Application
    Filed: August 10, 2011
    Publication date: June 13, 2013
    Inventors: Tatsuo Hasegawa, Hiromi Minemawari, Toshikazu Yamada, Hiroyuki Matsui
  • Patent number: 8336756
    Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: December 25, 2012
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Hiroyuki Matsui, Hirohisa Matsuki, Koki Otake
  • Patent number: 8302843
    Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: November 6, 2012
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Hiroyuki Matsui, Yutaka Makino, Yoshito Akutagawa
  • Publication number: 20120251968
    Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
    Type: Application
    Filed: June 14, 2012
    Publication date: October 4, 2012
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Hiroyuki MATSUI, Yutaka Makino, Yoshito Akutagawa
  • Publication number: 20120187181
    Abstract: A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.
    Type: Application
    Filed: March 31, 2012
    Publication date: July 26, 2012
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Hiroyuki MATSUI, Hirohisa Matsuki, Koki Otake
  • Patent number: 7888258
    Abstract: A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: February 15, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Yoshito Akutagawa, Hiroyuki Matsui, Yutaka Makino
  • Publication number: 20090184156
    Abstract: A process for producing a semiconductor device, includes: first melting by heating only a superior portion of a bump formed on an electrode on one principle surface of a semiconductor substrate; and second melting the entire bump by also heating an inferior portion of the bump.
    Type: Application
    Filed: March 27, 2009
    Publication date: July 23, 2009
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventors: Hiroyuki Matsui, Yutaka Makino, Yoshito Akutagawa
  • Publication number: 20090087984
    Abstract: A forming method of an electrode includes the steps of providing an electrode material on a conductive part; exposing the electrode material at a temperature equal to or higher than a melting point of the electrode material in an oxidizing atmosphere; and exposing the melted electrode material, in a reducing atmosphere, at a temperature equal to or higher than the melting point of the electrode material and lower than the temperature at which the electrode material is exposed in the oxidizing atmosphere.
    Type: Application
    Filed: June 23, 2008
    Publication date: April 2, 2009
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventors: Yoshito AKUTAGAWA, Hiroyuki MATSUI, Yutaka MAKINO