Abstract: There is provided an optical recording medium substrate including a polycarbonate in which an average molecular weight is in a range from 15000 to 16000, and mass per unit volume at 25° C. is in a range from 1.1930 g/cm3 to 1.2000 g/cm3.

Abstract: Provided is an operation confirmation device for an electric actuator for an emergency stop device that can improve maintainability of an electric device portion. The operation confirmation device for the electric actuator for the emergency stop device confirms operation of an electric actuator (10). The electric actuator actuates a drive mechanism that drives the elevator emergency stop device, and includes a movable element (34a, 34b, 34c) mechanically connected to the drive mechanism, an electromagnet (35a, 35b) facing the movable element, and a mechanism portion (36, 41) configured to convert rotation of a motor (37) into linear movement of the electromagnet. The operation confirmation device includes: a position detector (109) configured to detect a position of the movable element; and a controller (7) configured to detect a failure of the motor based on a position detection signal from the position detector.

Abstract: Provided is a spunbond nonwoven fabric for use in filters which has excellent rigidity, folding endurance, and uniformity of a weight per unit area, and which also has excellent dust collection performance and mechanical properties. The spunbond nonwoven fabric for use in filters includes a thermoplastic continuous filament and has a partially fused portion. The nonwoven fabric has a stiffness of 2 mN or more and 100 mN or less, a weight per unit area-CV value of 5% or less, and a weight per unit area of 150 g/m2 or more and 300 g/m2 or less.

Abstract: A semiconductor device includes a stack including a conductor layer and an insulator layer, a block insulating layer, a channel layer, a charge storage layer provided between the block insulating layer and the channel layer, and a tunnel layer provided between the charge storage layer and the channel layer, where the charge storage layer includes a first charge storage layer containing Si, N and at least one of Al, Mo, Nb, Hf, Zr, Ti, B, or P, a second charge storage layer containing Si and N, in which Si is contained at a second concentration higher than a first concentration that is a concentration of Si in the first charge storage layer, and provided between the first charge storage layer and the tunnel layer, and a dielectric layer containing at least one of silicon oxynitride (SiON), silicon oxycarbonitride (SiOCN), or aluminum oxide (AlOx), and provided between the first charge storage layer and the second charge storage layer.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked film in which a plurality of silicon oxide layers, one of which having a film density of 2.3 g/cm3 or more, and a plurality of conductive layers, are alternately stacked in a first direction, and a memory pillar that penetrates the stacked film in the first direction, wherein a plurality of memory cells is provided in the memory pillar.

Abstract: To provide a positive electrode mixture layer that can enhance the charge/discharge cycle life, and a lithium ion secondary battery having the positive electrode mixture layer. The positive electrode mixture layer includes an active material, a solid electrolyte, and a binder. The active material contains a compound including Li, Ni, Mn, Co, and O, and the solid electrolyte contains an oxide having a garnet structure which contains Li, La, and Zr. The positive electrode mixture layer further contains an ionic liquid which contains an imidazolium cation and a sulfonylimide anion. The ratio of the number of Ni atoms present in one molecule of the compound to the total number of Li, Ni, Mn, Co, and O atoms present in the molecule is 12.5% or less. The relative amount of oxide with respect to the positive electrode mixture layer is 1 to 25 vol. %.

Abstract: A solid electrolyte having a garnet-type structure which contains Li, La, Zr, and O, in which, with respect to particles of the solid electrolyte having a particle size equal to or greater than the particle size at which the cumulative value of frequency in a volume-based particle size distribution reaches 10%, a number average of degrees of envelope of particles is 0.8 or greater, the degree of envelope being defined as a ratio (area within a contour of a particle/area within an envelope of the particle).

Abstract: The plasma processing apparatus includes a processing container, a substrate holder that is inserted into the processing container and places a plurality of substrates in multiple tiers, a rotation shaft that rotates the substrate holder inside the processing container, a gas supply pipe that supplies a processing gas into the processing container, an exhauster that evacuates an inside of the processing container, a pair of electrodes arranged outside the processing container to face each other across a center of the processing container, and a radio-frequency power supply that applies radio-frequency power to the pair of electrodes, thereby generating capacitively-coupled plasma inside the processing container.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

Abstract: Provided is a cooling unit to be used in an inspection of a semiconductor device. The cooling unit includes a jacket for dissipating heat of the semiconductor device. The jacket is provided with a light passing portion for passing light from the semiconductor device. The jacket has a space defining surface that faces the semiconductor device and defines a space between the space defining surface and the semiconductor device in a state where the light passing portion faces the semiconductor device. The jacket is provided with a supply flow path through which a fluid to be supplied to the space flows.

Abstract: A nonwoven fabric for curtain in an embodiment of the present invention is formed from fibers having a thermoplastic resin as a main component, said nonwoven fabric for curtain being characterized in that: in the surface of the nonwoven fabric, the fibers are fused together at points where the fibers intersect, and the fibers are mutually isolated at locations other than the intersecting points; and furthermore, the KES surface roughness SMD of at least one side of the sheet is 1.2 ?m or less, and the longitudinal tearing strength per fabric weight is 0.50 or more.

Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

Abstract: A plasma processing apparatus includes: a processing container extended in a longitudinal direction; a raw material gas supply configured to supply a raw material gas into the processing container; a plasma partition wall provided along the longitudinal direction of the processing container, defining a plasma generation space therein, and having an opening through which the plasma generation space and an inside of the processing container communicate with each other; a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the plasma generation space; and an opening/closing unit configured to open/close the opening.

Abstract: A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

Abstract: An electrolytic capacitor includes a capacitor element. The capacitor element includes an anode including a dielectric layer thereon and a cathode member including a conductive polymer and in contact with the dielectric layer. The capacitor element is impregnated with a liquid containing at least one of polyalkylene glycol and derivatives of polyalkylene glycol. The liquid further contains an oxidation inhibitor.

Abstract: A deposition method of depositing a silicon nitride film on a surface of a substrate includes: (a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H); (b) exposing the substrate to a plasma formed from hydrogen (H2) gas; (c) exposing the substrate to a plasma formed from a process gas containing a halogen; (d) supplying trisilylamine (TSA) to the substrate; and (e) repeating (a) to (d) in this order.

Abstract: A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.