Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

Abstract: Provided is a cooling unit to be used in an inspection of a semiconductor device. The cooling unit includes a jacket for dissipating heat of the semiconductor device. The jacket is provided with a light passing portion for passing light from the semiconductor device. The jacket has a space defining surface that faces the semiconductor device and defines a space between the space defining surface and the semiconductor device in a state where the light passing portion faces the semiconductor device. The jacket is provided with a supply flow path through which a fluid to be supplied to the space flows.

Abstract: A nonwoven fabric for curtain in an embodiment of the present invention is formed from fibers having a thermoplastic resin as a main component, said nonwoven fabric for curtain being characterized in that: in the surface of the nonwoven fabric, the fibers are fused together at points where the fibers intersect, and the fibers are mutually isolated at locations other than the intersecting points; and furthermore, the KES surface roughness SMD of at least one side of the sheet is 1.2 ?m or less, and the longitudinal tearing strength per fabric weight is 0.50 or more.

Abstract: A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.

Abstract: A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

Abstract: A plasma processing apparatus includes: a processing container extended in a longitudinal direction; a raw material gas supply configured to supply a raw material gas into the processing container; a plasma partition wall provided along the longitudinal direction of the processing container, defining a plasma generation space therein, and having an opening through which the plasma generation space and an inside of the processing container communicate with each other; a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the plasma generation space; and an opening/closing unit configured to open/close the opening.

Abstract: A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

Abstract: An electrolytic capacitor includes a capacitor element. The capacitor element includes an anode including a dielectric layer thereon and a cathode member including a conductive polymer and in contact with the dielectric layer. The capacitor element is impregnated with a liquid containing at least one of polyalkylene glycol and derivatives of polyalkylene glycol. The liquid further contains an oxidation inhibitor.

Abstract: A deposition method of depositing a silicon nitride film on a surface of a substrate includes: (a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H); (b) exposing the substrate to a plasma formed from hydrogen (H2) gas; (c) exposing the substrate to a plasma formed from a process gas containing a halogen; (d) supplying trisilylamine (TSA) to the substrate; and (e) repeating (a) to (d) in this order.

Abstract: A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.

Abstract: A sample rack used to hold a sample container containing a sample and to transport the held sample container, includes a container holding part configured to hold the sample container; and a mark indicating an amount of the sample stored in the sample container held by the container holding part.

Abstract: Provided is a cooling unit to be used in an inspection of a semiconductor device. The cooling unit includes a jacket for dissipating heat of the semiconductor device. The jacket is provided with a light passing portion for passing light from the semiconductor device. The jacket has a space defining surface that faces the semiconductor device and defines a space between the space defining surface and the semiconductor device in a state where the light passing portion faces the semiconductor device. The jacket is provided with a supply flow path through which a fluid to be supplied to the space flows.

Abstract: A plasma processing apparatus includes a cylindrical processing chamber with a sidewall having an opening, to accommodate substrates on respective stages. The plasma processing apparatus includes a plasma compartment wall with an outer surface, the plasma compartment wall being hermetically provided at the sidewall of the processing chamber to close the opening of the sidewall of the processing chamber, and the plasma compartment wall defining a plasma formation space. The plasma processing apparatus includes a first plasma electrode pair consisting of first electrodes, the first electrodes being arranged opposite each other, on opposite sides of the outer surface of the plasma compartment wall. The plasma processing apparatus includes a second plasma electrode pair consisting of second electrodes, the second electrodes being arranged opposite each other, on the opposite sides of the outer surface of the plasma compartment wall.

Abstract: A temperature sensor includes: a thermocouple having a temperature measurement contact in a processing container in which a plasma processing is performed, and configured to measure a temperature inside the processing container; a protective tube configured to accommodate and protect the thermocouple; and an electromagnetic shield provided in the protective tube to cover the thermocouple.

Abstract: Provided is a spunbound nonwoven fabric for use in filters which has excellent rigidty, folding endurance, and uniformity of a weight a unit area, and which also has dust collection perforance and mechanical properties. The spunbond nonwoven fabric for use in filters includes a thermoplastic continuous filament and has a partially fused portion. The nonwoven fabric has a stiffness of 2 mN or more and 100 mN or less, a weight per unit area-CV value 5% or less, and a weight per unit area of 150 g/m2 more and 300 g/m2 or less.

Abstract: A nonwoven fabric for curtain in an embodiment of the present invention is formed from fibers having a thermoplastic resin as a main component, said nonwoven fabric for curtain being characterized in that: in the surface of the nonwoven fabric, the fibers are fused together at points where the fibers intersect, and the fibers are mutually isolated at locations other than the intersecting points; and furthermore, the KES surface roughness SMD of at least one side of the sheet is 1.2 ?m or less, and the longitudinal tearing strength per fabric weight is 0.50 or more.

Abstract: A plasma processing apparatus includes: a processing container extended in a longitudinal direction; a raw material gas supply configured to supply a raw material gas into the processing container; a plasma partition wall provided along the longitudinal direction of the processing container, defining a plasma generation space therein, and having an opening through which the plasma generation space and an inside of the processing container communicate with each other; a reaction gas supply configured to supply a reaction gas that reacts with the raw material gas, into the plasma generation space; and an opening/closing unit configured to open/close the opening.

Abstract: A heat treatment method includes: forming an amorphous silicon film having a hydrogen concentration in a film of 5×1019 atoms/cm3 or more, on a substrate; and irradiating the substrate with microwaves to heat the amorphous silicon film thereby forming a polycrystalline silicon film from the amorphous silicon film.