Abstract: A method of removing non-noble metal oxides from material (e.g., semiconductor material) used to make a microelectronic device includes providing the material comprising traces of the conducting non-noble metal oxides; applying a chemical mixture (or chemical solution) to the material; removing the traces of the non-noble metal oxides from the material; and removing the chemical mixture from the material. The non-noble metal oxides comprise MoOx, wherein x is a positive number between 0 and 3. The chemical solution comprises any one of HNO3-based chemicals, H2SO4-based chemicals, HCl-based chemicals, or NH4OH-based chemicals.

Abstract: A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.

Abstract: A metal oxide bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a desired composition and crystal structure. An example is crystalline MoO2 if the dielectric layer is TiO2 in the rutile phase. The other component of the bilayer (i.e. top layer) is a sub-oxide of the same material as the bottom layer. The top layer serves to protect the bottom layer from oxidation during subsequent PMA or other DRAM fabrication steps by reacting with any oxygen species before they can reach the bottom layer of the bilayer second electrode.

Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO2?x where x is between 0 and 2, and the physical thickness of the catalytic layer is between about 0.5 nm and about 10 nm, and the dielectric layer is ZrO2.

Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.

Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode film. The first electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the first electrode film. A high-k dielectric film is formed over the first electrode film. A second electrode film is formed over the dielectric film. The second electrode film comprises a conductive binary metal compound and a dopant. The dopant may have a uniform or non-uniform concentration within the second electrode film. The dopants and their distribution are chosen so that the crystal structure of the surface of the electrode is not degraded if the electrode is to be used as a templating structure for subsequent layer formation. Additionally, the dopants and their distribution are chosen so that the work function of the electrodes is not degraded.

Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal compound and the conductive binary metal compound is annealed in a reducing atmosphere to promote the formation of a desired crystal structure. The binary metal compound may be a metal oxide. Annealing the metal oxide (i.e. molybdenum oxide) in a reducing atmosphere may result in the formation of a first electrode material (i.e. MoO2) with a rutile-phase crystal structure. This facilitates the formation of the rutile-phase crystal structure when TiO2 is used as the dielectric layer. The rutile-phase of TiO2 has a higher k value than the other possible crystal structures of TiO2 resulting in improved performance of the DRAM capacitor.

Abstract: A solid film-formation material feeding apparatus includes a supercritical fluid supply source for supplying supercritical fluid; and a column which is connected to the supercritical fluid supply source, and has a hollow part which is filled with a filler which is inactive for the supercritical fluid, wherein the hollow part can be further filled with a solid film-formation material which is soluble in the supercritical fluid. A column assembly which includes a plurality of the columns which may be connected in parallel to each other.

Abstract: A vaporizing and feed apparatus for vaporizing and feeding a solid film-forming raw material comprises a supercritical fluid feeding part for producing and feeding a supercritical fluid, a supercritical fluid adjusting part for dissolving the solid film-forming raw material in the supercritical fluid by bringing the supercritical fluid fed from the supercritical fluid feeding part into contact with the solid film-forming raw material, and a vaporizing part for phase-transitioning the supercritical fluid having the dissolved solid film-forming raw material to a gas, the solid film-forming raw material thereby being deposited in the gas, and for vaporizing the deposited solid film-forming raw material.

Abstract: A method of manufacturing a device includes forming a covering layer having affinity for a filler to be injected into a space between a first base and a second base, on at least one of the opposing surfaces of the first base and the second base, and then injecting the filler into the space between the first base and the second base.

Abstract: A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed in the inside of the high-pressure vessel and curing the under-fill material flowing in the space between the plurality of the semiconductor chips by a polymerization reaction, while the supercritical fluid is being supplied.

Abstract: This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon substrate highly reliable one. Specifically, this invention provides a method for manufacturing a semiconductor silicon substrate including at least two of: a cleaning step of cleaning a substrate to be treated in a presence of carbon dioxide in a supercritical state; a film forming step of forming at least one of a conducting film, an insulating film and barrier film on the substrate to be treated in the presence of carbon dioxide in the supercritical state; an etching step of etching the substrate to be treated in the presence of carbon dioxide in the supercritical state; and a resist removing step of removing a resist on the substrate to be treated in the presence of carbon dioxide in the supercritical state.

Abstract: A supercritical film deposition apparatus for depositing a film on a substrate under a supercritical fluid ambient by supplying a deposition source material, includes: an autoclave that includes a reactor for depositing the film; a load lock chamber that is provided in the autoclave wherein the substrates before and after suffering depositing the film are transferred to the load lock chamber; a pressure control unit that is provided in the load lock chamber to control a pressure in the load lock chamber; an external gateway that is provided in the load lock chamber to transfer the substrate from and to outside of the autoclave; an internal gateway that is provided in the load lock chamber to transfer the substrate from and to the reactor; and a partition capable of opening and closing so as to isolate the load lock chamber from outside of the internal gateway.

Abstract: A solid film-formation material feeding apparatus includes a supercritical fluid supply source for supplying supercritical fluid; and a column which is connected to the supercritical fluid supply source, and has a hollow part which is filled with a filler which is inactive for the supercritical fluid, wherein the hollow part can be further filled with a solid film-formation material which is soluble in the supercritical fluid. A column assembly which includes a plurality of the columns which may be connected in parallel to each other.

Abstract: A method of manufacturing a substrate is provided for readily processing a substrate in the presence of a supercritical fluid in a deposition step, an etching step, a resist peeling step and the like. The method of manufacturing a substrate of the present invention is a method of manufacturing a substrate for processing a surface of the substrate by filling a liquid fluid in a reaction chamber in which the substrate is placed, and reacting a precursor solved in the liquid fluid in the vicinity of the surface of the substrate, wherein the substrate is placed on a ceiling of the reaction chamber with the surface of the substrate oriented downward.

Abstract: A film deposition processing apparatus and a film deposition method for forming a uniform film on a surface of a fine structure formed on a wafer using a supercritical fluid as a medium are provided. Film deposition is performed using a film deposition processing apparatus, comprising: a film deposition processing chamber; a holder which holds the wafer on a top surface inside the film deposition processing chamber; a heater which heats the wafer held on the top surface inside the film deposition processing chamber and is embedded in an upper portion of the film deposition processing chamber; a stirrer which stirs an inside of the film deposition processing chamber; a mixer which prepares a precursor solution made by dissolving at least one of precursors in the supercritical fluid; and a precursor solution inlet which introduces the precursor solution inside the film deposition processing chamber.

Abstract: A batch deposition chamber for use in a supercritical deposition process is divided into a plurality of compartments each adapted to receive therein a wafer. A supercritical fluid is introduced into the compartments at the same flow rate via respective feed tubes for depositing a film on the wafers. Each of the ambient temperature and the surface temperature of the wafers is controlled at the same temperature among all the wafers by using temperature sensors provided for the respective wafers and a temperature controller.

Abstract: The present invention has an object of providing: a film formation apparatus for forming a film by a supercritical film formation method using at least a solid precursor wherein the solid precursor can be introduced into a film formation chamber at constant speed; a method for introducing the precursor; and a film formation method.

Abstract: This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon substrate highly reliable one. Specifically, this invention provides a method for manufacturing a semiconductor silicon substrate including at least two of: a cleaning step of cleaning a substrate to be treated in a presence of carbon dioxide in a supercritical state; a film forming step of forming at least one of a conducting film, an insulating film and barrier film on the substrate to be treated in the presence of carbon dioxide in the supercritical state; an etching step of etching the substrate to be treated in the presence of carbon dioxide in the supercritical state; and a resist removing step of removing a resist on the substrate to be treated in the presence of carbon dioxide in the supercritical state.

Abstract: The present invention provides a method of manufacturing a semiconductor silicon substrate provided with a capacitor structure having a capacitor hole, the capacitor hole having a depth of equal to or greater than 3 ?m and an aspect ratio equal to or greater than 30, the method including at least: cleaning the capacitor hole provided on the substrate to be treated in the presence of carbon dioxide in a supercritical state under conditions of a temperature ranging from 31 to 100° C. and a pressure ranging from 18 to 40 MPa; and forming a metal thin film for capacitor electrodes on the capacitor hole provided on the substrate to be treated in the presence of carbon dioxide in a supercritical state under conditions of a temperature ranging from 100 to 350° C. and a pressure ranging from 7.2 to 12 MPa.