Patents by Inventor Hiroyuki Tokunaga

Hiroyuki Tokunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hybrid substrate
    Patent number: 5232766
    Abstract: A hybrid substrate comprises an aluminum-based ceramic base substrate and a silicon layer provided on the base substrate.
    Type: Grant
    Filed: May 18, 1992
    Date of Patent: August 3, 1993
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hiroyuki Tokunaga
  • Hybrid substrate
    Patent number: 5134018
    Abstract: A hybrid substrate comprises an aluminum-based ceramic base substrate and a silicon layer provided on the base substrate.
    Type: Grant
    Filed: August 2, 1991
    Date of Patent: July 28, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hiroyuki Tokunaga
  • Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
    Patent number: 5130103
    Abstract: Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.
    Type: Grant
    Filed: August 30, 1991
    Date of Patent: July 14, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kenji Yamagata, Hideya Kumomi, Hiroyuki Tokunaga, Kozo Arao
  • II-IV group compound crystal article and process for producing same
    Patent number: 5118365
    Abstract: A II-VI group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a II-VI group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).
    Type: Grant
    Filed: March 4, 1991
    Date of Patent: June 2, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Tokunaga, Takao Yonehara
  • Process for selective formation of II-VI group compound flim
    Patent number: 5100691
    Abstract: A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).
    Type: Grant
    Filed: April 16, 1991
    Date of Patent: March 31, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Tokunaga, Takao Yonehara
  • Process for producing compound semiconductor using an amorphous nucleation site
    Patent number: 5010033
    Abstract: A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.
    Type: Grant
    Filed: April 30, 1990
    Date of Patent: April 23, 1991
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroyuki Tokunaga, Kenji Yamagata, Takao Yonehara