Abstract: A UV resin is set between a surface of a substrate having a wiring pattern formed thereon and a flat surface of a mold plate, and the resultant structure is inserted between a pair of rollers and pressed to join the substrate to the mold plate. After the UV resin is cured, the mold plate is separated, thereby manufacturing a buried wiring substrate as a liquid crystal display device substrate.

Abstract: In a vehicle steering control system, an actuating torque is applied to steerable wheels according to a steering torque applied to a steering wheel in a conventional manner, and an additional actuating torque is applied to the steering wheel by an electric motor according to lateral dynamic conditions of the vehicle so as to control the lateral stability of the vehicle even in the presence of external interferences such as crosswind. Such external interferences are detected as a lateral dynamic condition of the vehicle such as the yaw rate of the vehicle, and the steering control system produces a steering reaction which counteracts such a lateral dynamic condition by applying the additional actuating torque to the steerable wheels so that the vehicle may maintain a straight course in spite of such external interferences without requiring any intentional efforts by the vehicle operator.

Abstract: A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.

Abstract: An electrode substrate is produced through at least the following steps of: forming a plurality of first electrodes on a light-transmissive substrate while leaving a spacing between the first electrodes, filling a resin in the spacing, curing the filled resin, and forming a plurality of second electrodes on the first electrodes and the resin so as to be in contact with the associated first electrodes, respectively. In the electrode substrate, the first electrodes have a thickness h (nm) and an average surface roughness d (nm) and the resin has a curing shrinkage ratio .alpha. (%). The thickness h, the average surface roughness d and the curing shrinkage ratio a satisfies the following relationship: d.gtoreq..alpha..multidot.h/1000.

Abstract: In a vehicle steering control system, an actuating torque is applied to steerable wheels according to a steering torque applied to a steering wheel in a conventional manner, and an additional actuating torque is applied to the steering wheel by an electric motor according to lateral dynamic conditions of the vehicle so as to control the lateral stability of the vehicle even in the presence of external interferences such as crosswind. Such external interferences are detected as a lateral dynamic condition of the vehicle such as the yaw rate of the vehicle, and the steering control system produces a steering reaction which counteracts such a lateral dynamic condition by applying the additional actuating torque to the steerable wheels so that the vehicle may maintain a straight course in spite of such external interferences without requiring any intentional efforts by the vehicle operator.

Abstract: A crystal is formed by applying crystal forming treatment to a substrate, the surface of the substrate being divided into nonnucleation surface exhibiting a small nucleation density and nucleation surface having a sufficeintly small area to allow crystal growth from a single nucleus and exhibiting a larger nucleation density than the nonnucleation surface and the nonnucleation surface being constituted of the surface of a buffer layer to alleviate generation of stress in the crystal formed.

Abstract: A III-V compound semiconductor device comprises the use of a compound semiconductor of groups III-V of the periodic table with a polycrystalline structure of an average grain size of 0.6 .mu.m or larger.

Abstract: A semiconductor device includes a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.

Abstract: A light-emitting device formed by applying a crystal formation process to a substrate with a free surface on which provided, in mutually adjacent manner, are a non-nucleation surface and a nucleation surface with a nucleation density larger than that of the non-nucleation surface, wherein the nucleation surface is provided in an oblong form.

Abstract: Provided is a vehicle steering system which can substantially stabilize the lateral dynamic behavior of a vehicle with a simple control logic over the entire range of the vehicle speed. A steering torque proportional to a yaw rate and/or a lateral acceleration of the vehicle is applied to the steerable wheels to counteract a lateral deviation of the vehicle. To avoid the oscillatory or overshooting behavior of the control system, a damping torque is applied to the steering wheel. Thus, the counteracting steering torque is given as a mathematical function including a sum of a first term consisting of a product of a yaw rate and/or the lateral acceleration of the vehicle and a first coefficient, and a second term consisting of a product of an angular speed of the steering wheel and a second coefficient.

Abstract: In a powered vehicle steering system which produces a steering reaction for controlling the lateral movement of the vehicle, the steering reaction including a yaw rate reaction component and a steering wheel damping component, when the vehicle operator is firmly holding the steering wheel or actually turning the steering wheel, the damping component is reduced so that the effort required for turning the steering wheel may be reduced, and the vehicle operator may turn the steering wheel without any substantial effort. Conversely, if the vehicle operator is not firmly holding the steering wheel, and the steering wheel is allowed to move freely, the damping component is increased so that the lateral movement of the vehicle may be stabilized even when the vehicle is subjected to disturbances such as crosswind. Thus, the stability of the lateral movement of the vehicle and the responsiveness of the vehicle steering system can be ensured at the same time.

Abstract: A semiconductor film having a very high light response of photoconductivity and good electrical characteristics such a wide band gap, for example, a non-monocrystalline silicon carbide film, is formed by decomposition reaction of a silicon-containing raw material gas and a hydrocarbon as a carbon raw material under light irradiation or high frequency, where the carbon raw material gas comprises at least one of tertiary and quaternary carbon atom-containing hydrocarbons of specific chemical formulae, and a semiconductor device using the thus formed semiconductor film is also provided.

Abstract: A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S.sub.NDL).

Abstract: A light emission element using a plycrystalline semiconductor material of III-V group compound comprises an n type semiconductor polycrystalline layer and a p type semiconductor polycrystalline layer. In such a light emission element, the n type semiconductor polycrystalline layer and the p type semiconductor polycrystalline layer comprise a light emitting area formed by polycrystals having the average grain size of 0.6 .mu.m or more, and a wiring area formed by polycrystals having the average grain size of 0.5 .mu.m or less. Hence, the light emission efficiency is enhanced as well as improving the reliability of the element.

Abstract: A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying the group VI atoms of periodic table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed and forming selectively a II-VI group compound film only on said nucleation surface (S.sub.NDL).

Abstract: A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.

Abstract: A crystal formation method is disclosed which is a crystal growth method comprising feeding two or more kinds of reactive starting gases alternately into a crystal formation treatment space having a substrate with a non-nucleation surface (S.sub.NDS) having small nucleation density and a nucleation surface (S.sub.NDL) having sufficiently small area for crystal growth only from a single nucleus, and larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) being arranged adjacent to each other arranged therein, thereby permitting a monocrystal to grow selectively from said single nucleus, characterized in that when one of the starting gases is changed over to the other starting gas, the reaction vessel is once evacuated internally to 10.sup.-2 Torr or less.

Abstract: A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

Abstract: A light emitting device includes a non-nucleation layer on which a step is formed to define a non-nucleation surface. Compound semiconductor islands, each consisting of n-type and p type semiconductor regions, are formed along a wall surface constituting the boundary of the step, and outer and inner electrodes are formed thereon, with the wiring section for the outer electrodes being formed on the surface of the non-nucleation layer which is at a level higher than the non-nucleation surface. The electrodes and the electrode wiring section are positioned substantially at the same level, thus attaining a reduction in resistance value and an increase in strength.

Abstract: A semiconductor device comprises a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.