Abstract: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

Abstract: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

Abstract: An impedance of a power supply wire is calculated based on design data of a semiconductor integrated circuit, a frequency characteristic of the calculated impedance is obtained, and a design of the semiconductor integrated circuit is changed based on the obtained frequency characteristic. As the above-described impedance, an impedance between power supplies that are different in potential such as a power supply and a ground may be calculated, or an impedance between power supplies that are substantially the same in potential such as a power supply and an N-well power supply may be calculated. By a design modification, a wiring method, the number of pads, separation of power supplies, a type of package, a characteristic of an inductance element, a substrate structure, a distance between wires, a decoupling capacitance, a length of a wire, and a characteristic of a resistance element, for example, are changed.

Abstract: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

Abstract: An object of the invention is to discover at the chip level a portion of a high density of contact holes in wires of a large area that becomes a portion where wire defects will occur. In order to achieve this, the area ratio of the total area of wires of the same node to the total area of contact holes in the wires of the same node is limited in a chip layout and wire formation defects are detected by determining whether or not defects exists based on this limitation. Thus, defects are detected wherein the area ratio exceeds the limit at the layout design stage and thereby formation defects such as a disconnection of a wire of a large area, a wire breakdown, a surface peeling due to a hillock or a defective connection between a wire and a contact hole can be avoided.

Abstract: To provide a pattern generating method for a semiconductor device capable of forming a highly reliable semiconductor device, the accuracy of which is high. A method of generating a pattern for a semiconductor device comprises: a step of designing and arranging a layout pattern of a semiconductor chip; a step of extracting an area ratio of the mask pattern from the layout pattern; and a step of adding and arranging a dummy pattern to the layout pattern, while consideration is given to the most appropriate area ratio of the layout pattern of the layer obtained according to a process condition of the layer composing the layout pattern, so that the area ratio of the layer can be the most appropriate area ratio.

Abstract: A method of inspecting a photomask for a semiconductor integrated circuit formed based on drawing pattern data, includes the steps of classifying a drawing pattern of the semiconductor integrated circuit into a plurality of ranks in accordance with a predetermined reference and extracting the same, determining inspecting accuracy for each of the ranks, and deciding quality of the photomask depending on whether the determined inspecting accuracy is satisfied.

Abstract: A method of inspecting a photomask for a semiconductor integrated circuit formed based on drawing pattern data, includes the steps of classifying a drawing pattern of the semiconductor integrated circuit into a plurality of ranks in accordance with a predetermined reference and extracting the same, determining inspecting accuracy for each of the ranks, and deciding quality of the photomask depending on whether the determined inspecting accuracy is satisfied.

Abstract: To provide a semiconductor device characterized in that: a decoupling capacitor can be increased; noise generated from an electric power supply can be effectively absorbed; and a stable operation of a circuit can be realized. Irrespective of whether or not a region is close to a power supply wiring or a ground wiring, MOS is spread all over a spare area of a chip and connected to a power supply wiring and ground wiring by utilizing a wiring layer and diffusion layer.

Abstract: In a method of analyzing a power noise based on the circuit information of a semiconductor integrated circuit device, the power noise is analyzed in consideration of the influence of the impedance of a substrate. Consequently, the impedance of the substrate which has not been conventionally considered is taken into consideration. Thus, precision in the analysis can be enhanced more greatly.

Abstract: In a gate-level logic simulation, a change in electric current is calculated from event information 5 output from a logic simulator 4 through use of a current waveform calculation section 7. The thus-calculated change in current is subjected to FFT processing through use of an FFT processing section 9, thereby determining a frequency characteristic of EMI and enabling EMI analysis.

Abstract: In contrast with a known dynamic gate-level simulation method, a method of analyzing electromagnetic interference (an EMI analysis method) according to the present invention enables estimation of EMI noise, by means of calculating signal propagation of each node through use of the signal propagation probability technique, and calculating variation time of each node through use of “the Static timing analysis technique”. In short, the present invention is characterized in calculating a frequency characteristic from the relationship between toggle probability of each node and delay in each node.

Abstract: To provide a semiconductor integrated circuit device capable of effectively absorbing power supply noise, of achieving the stable operation of a circuit, and particularly, of absorbing noise in a vicinity of a noise generating source. The semiconductor integrated circuit device has at least one circuit block. The semiconductor integrated circuit device includes a bypass capacitor having a first conductor layer 1a formed on the circuit block and a second conductor layer 1b formed on the first conductor layer 1a with a capacitor insulating film 1c interposed therebetween. One of the first and second conductor layers of the bypass capacitor is connected to one of a grounding wiring line or a power supply wiring lines through a substrate contact which fixes a potential of a substrate and the other is connected to the other of the power supply wiring line or the grounding wiring line.

Abstract: In the verification method of the present invention, a defect that is to cause a problem in fabrication is extracted from a mask pattern. The mask pattern is one obtained by deforming a mask pattern of a photomask used in a photolithography process so as to provide a transferred image close to a desired design pattern. The verification method includes the steps of: determining the exposure dose in the photolithography process; simulating the photolithography process on a computer based on the determined exposure dose; checking whether or not the desired design pattern has been obtained; and locating a fault point and outputting the result.

Abstract: A wiring pattern has been enlarged by mutually different values, thereby forming two enlarged wiring patterns are formed. Then, regions where the two enlarged wiring patterns overlap each other are removed, thereby forming a dummy pattern. Alternatively, a simple-figure pattern made of simple figures is formed and a dummy pattern is formed using the simple-figure pattern. A gap that is not wider than a predetermined value is located in a final wiring pattern made of the wiring pattern and the dummy pattern is defined as an air gap region. Thus, an interconnection structure incorporating air gaps between wiring patterns is formed.

Abstract: An impedance of a power supply wire is calculated based on design data of a semiconductor integrated circuit, a frequency characteristic of the calculated impedance is obtained, and a design of the semiconductor integrated circuit is changed based on the obtained frequency characteristic. As the above-described impedance, an impedance between power supplies that are different in potential such as a power supply and a ground may be calculated, or an impedance between power supplies that are substantially the same in potential such as a power supply and an N-well power supply may be calculated. By a design modification, a wiring method, the number of pads, separation of power supplies, a type of package, a characteristic of an inductance element, a substrate structure, a distance between wires, a decoupling capacitance, a length of a wire, and a characteristic of a resistance element, for example, are changed.

Abstract: Based on design data of a semiconductor integrated circuit, an impedance related to a power supply wire is calculated, and based on the calculated impedance, a frequency characteristic of power supply noise is analyzed. In calculation of an impedance, an impedance between power supplies which are different in potential, e.g., a main power supply and a ground, may be calculated. Alternatively, an impedance between power supplies which are substantially the same in potential, e.g., a main power supply and an N-well power supply, may be calculated. The calculated impedance includes a wire capacitance between power supply wires, a substrate resistance, an impedance of a package connected to the power supply wires, and so on. Thus, it is possible to provide a method for analyzing power supply noise of a semiconductor integrated circuit, which can be executed at an early stage of a design process with a small amount of calculation.

Abstract: A method of analyzing electromagnetic interference in which an amount of electromagnetic interference from an LSI is analyzed, wherein the method includes: an equivalent power source current information calculating step of calculating information of an equivalent power source current flowing in a power source current, from circuit information of the LSI chip; an estimating step of considering at least one of power source information of a power source for supplying a current to the LSI chip, package information of a package for the semiconductor chip, and measurement system information of a measurement system for measuring characteristics of the semiconductor chip, as analysis control information, and of estimating total information in which the analysis control information is reflected in the circuit information, as an equivalent circuit; and a total information analyzing step of performing analysis in accordance with the total information which is estimated in the estimating step.

Abstract: It is an object of the invention to effectively absorb a power noise and to implement the stable operation of a circuit. The invention provides a semiconductor device comprising a bypass capacitor including an MOS structure having a gate electrode formed to be extended from a power wiring region to a portion provided under an empty region which is adjacent to the power wiring region and has no other functional layer, and formed through a capacitive insulating film on a diffusion region having one conductivity type, and a substrate contact formed under a ground wiring region and fixing a substrate potential, wherein the bypass capacitor has a contact to come in contact with the power wiring which is formed on a surface of the gate electrode and has the diffusion region having the one conductivity type and a diffusion region of the substrate contact connected to each other.

Abstract: In substrate noise analysis for a semiconductor integrated circuit, it takes long to calculate the amount of current input to the substrate and substrate potential fluctuations in an analog circuit to which the current is propagated in combination with impedance/power supply resistance of the substrate including a large scale RC circuit network. The amount of calculation is reduced in calculating current passed to power supply/ground by adding triangles having areas corresponding to power consumption separately for rising/falling in logical changes in gate level simulation. The amount of calculation is reduced by summing current, interface capacitance, interface resistance, power supply resistance, ground resistance, power supply voltage fluctuations, and ground voltage fluctuations on a basis of block, instance or simultaneous operation. Since the calculation amount is reduced, it takes a shorter period to apply substrate noise analysis.