Abstract: Provided is a method of producing a high-quality film having a thin film and high uniformity in film thickness or the like. The method of producing a film includes supplying a raw material solution containing a solvent and a material that forms a film onto a substrate and drying the solvent to form the film on the substrate. A coating blade holding the raw material solution on the substrate is used, and the coating blade has a facing surface which faces a surface of the substrate and at least one side surface which is provided in the periphery of the facing surface and is in contact with the raw material solution. The solvent of the raw material solution is dried along a specific direction to form the film.

Abstract: A thin film field effect transistor includes at least: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and a protective layer provided on the substrate in this order from the substrate side. The active layer is a layer containing an amorphous oxide containing at least one metal selected from the group consisting of In, Sn, Zn and Cd. The thin film field effect transistor further includes, between the active layer and at least one of the source electrode or the drain electrode, an electric resistance layer containing an oxide or nitride containing at least one metal selected from the group consisting of Ga, Al, Mg, Ca and Si.

Abstract: The present invention relates to a patch package having a patch and a packaging film sandwiching the patch, wherein the packaging film is tightly sealed in two or more flat heat-sealed parts, and respective adjacent two or more flat heat-sealed parts are separated across a non-sealed part.

Abstract: An electronic device including a first electrode that is provided on a substrate and includes an Mo—Nb alloy, an insulating film disposed on the first electrode, and a second electrode disposed on the first electrode with at least the insulating film interposed between the first electrode and the second electrode; and a method for producing the electronic device are provided.

Abstract: A display medium including a layered structure that comprises two or more stacked display elements that each are provided, on or above a flexible substrate, with a pixel portion and lead line(s) for electrically connecting the pixel portion to outside of the pixel portion, and a hole portion or a cut-away portion included in the display element(s) that are above one or more of the lead line(s) of the display element(s) at a lower portion of the layered structure, so that the one or more of the lead line(s) of the lower portion display element(s) are exposed.

Abstract: A radiation imaging element that includes a plurality of pixel portions each having a phosphor layer that absorbs radiation transmitted through a subject to emit light, a photoelectric conversion portion that includes an upper electrode, a lower electrode, and a photoelectric conversion layer disposed between the upper electrode and the lower electrode, and a TFT which outputs a signal corresponding to an electric charge generated in the photoelectric conversion layer, wherein the TFT includes at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and an electric insulating layer is further provided so as to be electrically connected between the active layer and at least one of the source electrode or the drain electrode.

Abstract: An organic electroluminescence device includes a light reflection film 12 which is formed on an insulating substrate 10; an anode electrode 16 which has a transparent conductive film 14 which is formed on the light reflection film 12 so as to cover the light reflection film 12; an organic electroluminescence layer 18 which is formed on the anode electrode 16; and a cathode electrode 20 which is formed on the organic electroluminescence layer 18 and has light transmittance. Thereby, a high luminous efficiency can be realized without involving degradation of the device characteristics.

Abstract: A radiation imaging device 12 has a phosphor film 8; a photoelectric conversion portion 13 including an upper electrode 6, a lower electrode 2, and a photoelectric conversion film 4 disposed between the electrodes; a signal output portion 14 including a field effect thin film transistor 10 having an active layer 24 formed from an amorphous oxide and that outputs a signal corresponding to electric charges generated by the photoelectric conversion portion; and a substrate 1 on which the signal output portion, the photoelectric conversion portion and the phosphor film are formed in this order. Each of pixel portions is made up of the signal output portion, the photoelectric conversion portion and the phosphor film, and the signal output portion and the photoelectric conversion portion in each of the pixel portions are formed so as to have an overlapping portion in a thickness direction.

Abstract: A thin film field effect transistor includes at least: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and a protective layer provided on the substrate in this order from the substrate side. The active layer is a layer containing an amorphous oxide containing at least one metal selected from the group consisting of In, Sn, Zn and Cd. The thin film field effect transistor further includes, between the active layer and at least one of the source electrode or the drain electrode, an electric resistance layer containing an oxide or nitride containing at least one metal selected from the group consisting of Ga, Al, Mg, Ca and Si.

Abstract: A radiation imaging element that includes a plurality of pixel portions each having a phosphor layer that absorbs radiation transmitted through a subject to emit light, a photoelectric conversion portion that includes an upper electrode, a lower electrode, and a photoelectric conversion layer disposed between the upper electrode and the lower electrode, and a TFT which outputs a signal corresponding to an electric charge generated in the photoelectric conversion layer, wherein the TFT includes at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and an electric insulating layer is further provided so as to be electrically connected between the active layer and at least one of the source electrode or the drain electrode.

Abstract: A method of manufacturing a flexible substrate for an electronic device having at least a barrier layer and a flattened layer above a flexible supporting member, in which the flattened layer is provided with at least a thermosetting resin layer. The method includes installing the barrier layer above the flexible supporting member, and installing the flattened layer by facing the thermosetting resin toward a face of the barrier layer and adhering the thermosetting resin and the barrier layer by heating. A method of manufacturing an electronic device and an electronic device manufactured thereby are also provided.

Abstract: A radiation imaging device 12 has a phosphor film 8; a photoelectric conversion portion 13 including an upper electrode 6, a lower electrode 2, and a photoelectric conversion film 4 disposed between the electrodes; a signal output portion 14 including a field effect thin film transistor 10 having an active layer 24 formed from an amorphous oxide and that outputs a signal corresponding to electric charges generated by the photoelectric conversion portion; and a substrate 1 on which the signal output portion, the photoelectric conversion portion and the phosphor film are formed in this order Each of pixel portions is made up of the signal output portion, the photoelectric conversion portion and the phosphor film, and the signal output portion and the photoelectric conversion portion in each of the pixel portions are formed so as to have an overlapping portion in a thickness direction.

Abstract: A light emitting apparatus 10 having a substrate 12, a light emitting device 20 having: a pair of electrodes 14, 24 and an organic electroluminescent layer 18 disposed between the pair of electrodes that are stacked in the thickness direction on the substrate; lead-out lines 16, 26 formed on the substrate and respectively connected to the pair of electrodes of the light emitting device; an insulating layer 30 that contains an inorganic oxide and is formed on the substrate and on the lead-out lines and is formed around at least the light emitting device; an adhesive 32 provided on the insulating layer so as to surround the light emitting device, and a sealing member 34 that is bonded to the insulating layer via the adhesive and that seals the light emitting device.

Abstract: A display medium including a layered structure that comprises two or more stacked display elements that each are provided, on or above a flexible substrate, with a pixel portion and lead line(s) for electrically connecting the pixel portion to outside of the pixel portion, and a hole portion or a cut-away portion included in the display element(s) that are above one or more of the lead line(s) of the display element(s) at a lower portion of the layered structure, so that the one or more of the lead line(s) of the lower portion display element(s) are exposed.

Abstract: An organic electroluminescence device includes a light reflection film 12 which is formed on an insulating substrate 10; an anode electrode 16 which has a transparent conductive film 14 which is formed on the light reflection film 12 so as to cover the light reflection film 12; an organic electroluminescence layer 18 which is formed on the anode electrode 16; and a cathode electrode 20 which is formed on the organic electroluminescence layer 18 and has light transmittance. Thereby, a high luminous efficiency can be realized without involving degradation of the device characteristics.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: A functional device with excellent manufacturability and excellent resistance to wire breakage failures is provided, and particularly improved organic and inorganic electroluminescent devices are provided. The functional device includes a first electrode including a plurality of stripe electrodes disposed in parallel on a substrate, a second electrode disposed opposed to the first electrode, and a functional layer sandwiched between the electrodes, wherein a planarizing insulating layer is disposed at longitudinal direction edges of the stripe electrodes and fills the gaps between the stripe electrodes, and the functional layer is insulated from the first electrode at the longitudinal direction edges.

Abstract: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.

Abstract: An organic electroluminescence display apparatus comprising a first substrate 101 and a second substrate 102 adhered to the first substrate, wherein the first substrate 101 comprises a first base substrate 1 having an organic electroluminescence device 2, the organic electroluminescence device 2 comprises a first electrode 3, an organic electroluminescence layer 4, and a second electrode 5 provided in this order from the first base substrate side, the second substrate 102 comprises a second base substrate 6 and a patterned conductive film 7 provided on the second base substrate 6 such that the patterned conductive film 7 faces the first substrate 101, the patterned conductive film 7 has a lower specific resistance than the second electrode 5, and the conductive film 7 is electrically connected to the second electrode 5.