Abstract: A manufacturing method of a magnetic sensor, detecting a physical amount based on a resistance change in each MRE while applying an external magnetic field to MREs, includes: preparing a substrate; forming MREs, including a free magnetic layer having a changeable magnetization direction and a pin magnetic layer having a fixed magnetization direction, above the substrate; forming heaters corresponding to MREs; arranging the substrate in the external magnetic field having a magnetic field direction in a first direction parallel to the substrate; and heating with one portion of the heater portions and magnetizing one portion of the pin magnetic layers in the first direction; and arranging the substrate in another external magnetic field having another magnetic field direction in a second direction different from the first direction; and heating with another portion of the heater portions and magnetizing another portion of the pin magnetic layers in the second direction.

Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Abstract: A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Abstract: A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

Abstract: A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Abstract: A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

Abstract: A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

Abstract: A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.

Abstract: A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.

Abstract: A capacitive type humidity sensor includes: a semiconductor substrate; a plurality of humidity devices having a capacitance variable in accordance with a humidity; a standard capacitance device having a standard capacitance, a capacitance change of which in accordance with the humidity is smaller than that of the capacitance of each humidity device; and a CV converter circuit for converting a capacitance difference between the capacitance of each humidity device and the standard capacitance of the standard capacitance device to a signal voltage. The humidity devices, the standard capacitance device and the CV converter circuit are disposed on one side of the substrate.

Abstract: A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.

Abstract: A Fabri-Perot filter includes: a substrate; a first mirror disposed on the substrate; and a movable mirror unit facing the first mirror with a gap therebetween. The movable mirror unit is movable toward the first mirror in a case where a predetermined voltage is applied between the first mirror and the movable mirror unit so that the gap is changeable. The filter is capable of transmitting an infrared light having a predetermined wavelength corresponding to the gap. The movable mirror unit includes a center portion and a periphery portion, which is deformable easier than the center portion.

Abstract: A capacitance of a capacitor member, which varies according to a dynamic force such as an acceleration force imposed on the capacitor member, is detected by a detecting circuit. The detecting circuit is composed of an operational amplifier and a switched capacitor circuit connected in parallel to each other. A reset time (t), during which a feedback capacitor in the switched capacitor circuit is discharged, is set to satisfy the following formula: t>(?C+m)/n, where ?C is an initial capacitance of the capacitor member, and n and m are constant factors having values in certain ranges. By setting the reset time (t) according to the above formula, an amount of acceleration imposed on the capacitor member is accurately detected even when the capacitor member has a certain level of the initial capacitance.

Abstract: A capacitive type humidity sensor includes: a semiconductor substrate; a plurality of humidity devices having a capacitance variable in accordance with a humidity; a standard capacitance device having a standard capacitance, a capacitance change of which in accordance with the humidity is smaller than that of the capacitance of each humidity device; and a CV converter circuit for converting a capacitance difference between the capacitance of each humidity device and the standard capacitance of the standard capacitance device to a signal voltage. The humidity devices, the standard capacitance device and the CV converter circuit are disposed on one side of the substrate.

Abstract: A Fabri-Perot filter includes: a substrate; a first mirror disposed on the substrate; and a movable mirror unit facing the first mirror with a gap therebetween. The movable mirror unit is movable toward the first mirror in a case where a predetermined voltage is applied between the first mirror and the movable mirror unit so that the gap is changeable. The filter is capable of transmitting an infrared light having a predetermined wavelength corresponding to the gap. The movable mirror unit includes a center portion and a periphery portion, which is deformable easier than the center portion.