Abstract: An infrared gas sensor includes: an infrared light source having a resistor for emitting an infrared light by heating the resistor; an infrared light sensor having a detection device for generating an electric signal in accordance with a temperature change of the detection device corresponding to the infrared light in a case where the sensor receives the infrared light; a reflection member for reflecting the infrared light emitted from the light source to introduce the infrared light to the sensor; a casing for accommodating the light source, the light sensor, and the reflection member; and a substrate. The reflection member faces the light source. The resistor and the detection device are disposed on the substrate.

Abstract: A capacitance of a capacitor member, which varies according to a dynamic force such as an acceleration force imposed on the capacitor member, is detected by a detecting circuit. The detecting circuit is composed of an operational amplifier and a switched capacitor circuit connected in parallel to each other. A reset time (t), during which a feedback capacitor in the switched capacitor circuit is discharged, is set to satisfy the following formula: t>(?C+m)/n, where ?C is an initial capacitance of the capacitor member, and n and m are constant factors having values in certain ranges. By setting the reset time (t) according to the above formula, an amount of acceleration imposed on the capacitor member is accurately detected even when the capacitor member has a certain level of the initial capacitance.

Abstract: A gas detection device includes a light source, a light sensor element, and a shield plate arranged in a single package. The shield plate protects the light sensor element from light beams that travel from the light source directly to the light sensor element. The gas detection device further includes a reflector plate arranged so that light beams emitted from the light source are reflected off the reflector plate and travel to the light sensor element. The light sensor element detects a degree of light absorption by gas provided in a space between the reflector plate, the light source, and the light sensor element.

Abstract: A pair of comb-tooth-shaped electrodes are formed on the same plane of a semiconductor substrate. A protection film composed of silicon nitride film and humidity sensing film of polyimide-based polymer covers the pair of comb-tooth-shaped electrodes. A moisture-permeable film having a higher dielectric constant than the humidity sensing film and also having moisture-permeability is formed on the humidity sensing film. By this structure, the variation of the electrostatic capacitance between the pair of comb-tooth-shaped electrodes which varies in accordance with humidity variation in the humidity sensing film is increased.

Abstract: A semiconductor device having a membrane includes a semiconductor substrate, which has an active surface, and a membrane. A cavity is located between the active surface and the membrane and hermetically sealed. The membrane includes a first film, which has a through hole that extends through the first film, and a second film, which has been formed by reflowing a reflow layer made of a material that becomes viscous and reflows when heated. The through hole has been plugged by the second film.

Abstract: A method of manufacturing of a semiconductor device having a thermal oxidation process for selectively forming an oxide film by a thermal oxidation, which can reduce the generation of lattice defects in the semiconductor device during the thermal oxidation process. A groove portion LOCOS oxide film is formed in a groove portion of a semiconductor substrate by first and second wet oxidation steps. At the first wet oxidation step, a thin oxide film is formed on an exposed surface of an epitaxial layer by performing a wet oxidation through an opening portion made of silicon nitride under an oxidation temperature of approximately 875° C. At the second wet oxidation step, the oxidation temperature is risen to approximately 1050° C. to advance the oxidation of the epitaxial layer to finally form the groove portion LOCOS oxide film having a thickness of approximately 950 nm.