Abstract: A method for coating a vehicle body on which an electrodeposition coating has been performed includes in this order: applying a first base coating material over an outer surface of the vehicle body to form a first base layer; applying a mixture of a second base coating material and a first curing agent over an inner surface of the vehicle body to form an inner second base layer; applying the second base coating material over the first base layer that has not been baked to form an outer second base layer; applying a clear coating material over the inner second base layer and the outer second base layer to form a clear layer; and baking the first base layer, the inner second base layer, the outer second base layer, and the clear layer for curing thereof.

Abstract: A coating method for forming a laminated coating film including a lower layer formed on a base material and an upper layer formed on the lower layer including: preparing a thermosetting coating material as a lower layer-coating material and preparing a thermosetting coating material as an upper layer-coating material; forming an uncured laminated coating film by applying the lower layer-coating material and the upper layer-coating material on the base material using a wet-on-wet technique; and simultaneously curing the lower layer-coating material and the upper layer-coating material by baking the uncured laminated coating film. In the preparation step, the lower layer-coating material and the upper layer-coating material are selected so that an absolute value of a difference in shrinkage ratio between the lower layer and the upper layer coating materials is 2.0% or smaller at a late stage of the baking step.

Abstract: A coating method for forming a laminated coating film including: preparing a thermosetting coating material as a lower layer-coating material, an intermediate layer-coating material, and as an upper layer-coating material; forming an uncured laminated coating film by applying the lower layer-coating, the intermediate layer-coating, and the upper layer-coating materials on the base material using a wet-on-wet technique; and simultaneously curing the lower layer-coating, the intermediate layer-coating, and upper layer-coating materials by baking the uncured laminated coating film.

Abstract: A coating method for forming a laminated coating film including a lower layer formed on a base material and an upper layer formed on the lower layer including: preparing a thermosetting coating material as a lower layer-coating material and preparing a thermosetting coating material as an upper layer-coating material; forming an uncured laminated coating film by applying the lower layer-coating material and the upper layer-coating material on the base material using a wet-on-wet technique; and simultaneously curing the lower layer-coating material and the upper layer-coating material by baking the uncured laminated coating film. In the preparation step, the lower layer-coating material and the upper layer-coating material are selected so that an absolute value of a difference in shrinkage ratio between the lower layer and the upper layer coating materials is 2.0% or smaller at a late stage of the baking step.

Abstract: A coating method for forming a laminated coating film including: preparing a thermosetting coating material as a lower layer-coating material, an intermediate layer-coating material, and as an upper layer-coating material; forming an uncured laminated coating film by applying the lower layer-coating, the intermediate layer-coating, and the upper layer-coating materials on the base material using a wet-on-wet technique; and simultaneously curing the lower layer-coating, the intermediate layer-coating, and upper layer-coating materials by baking the uncured laminated coating film.

Abstract: A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

Abstract: A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

Abstract: A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

Abstract: A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: A management server transfers initial registration information to a registered information memory section of a document input/output apparatus. Upon completion of initial registration, the management server notifies by electronic mail the user's personal computer of the completion of registration, and displays from a www server a handling method and a method of software installation. The management server notifies by electronic mail the user's personal computer of replacement timing of expendables or any hardware trouble.

Abstract: A compact image input apparatus is operable under low power consumption, while omitting a buffer memory for storing image data, which is originally required to transfer image data between this image input apparatus and a personal computer.

Abstract: A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

Abstract: Substrates suitable to manufacture and products of a thin film semiconductor device are provided, by at first preparing a manufacturing substrate having a characteristic capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic of being suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.

Abstract: A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: The image scanner 101 comprises a manuscript conveying unit 102 having conveying rolls 115, 116 for conveying a manuscript 111 and a first light source 114, and a manuscript reading unit 103 mounted on the manuscript conveying unit 102. The manuscript reading unit 103 detects movement of the manuscript 111 in the sub-scanning direction 118 by a rotation detecting roll 122 driven by the conveying roll 115. When the manuscript 111 is a reflection-type one, only a second light source 124 is switched ON to read the manuscript 111. When the manuscript 111 is a transmission-type one, only the first light source 114 is switched ON to read the manuscript 111. The image scanner 101 does not have a fixed platen. One-dimensional CCD 131 is fixed. The image scanner 101 can therefore be small in size.