Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: Substrates suitable to manufacture and products of a thin film semiconductor device are provide, by at first preparing a manufacturing substrate having a characteristic of being capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic of being suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.

Abstract: Substrates suitable to manufacture and products of a thin film semiconductor device are provide, by at first preparing a manufacturing substrate having a characteristic of being capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic of being suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.

Abstract: A communication device includes a sub-rack unit and a plurality of plug-in units. The sub-rack unit includes a back wiring board having first connectors arranged in lines thereon, and a frame plate including vertical ribs and placed on said back wiring board so that the vertical ribs separate the lines of the first connectors. Each of the plug-in units includes: a printed board including top and bottom sides and parallel first and second sides, the printed board having second connectors provided on the first side thereof; a metal case including top and bottom faces, and parallel first and second side faces so as to cover the printed board; and first and second spring members. Each of said plug-in units is mounted in the sub-rack unit with the first and second connectors being connected so that the first and second side faces of the metal case are pressed outward against the vertical ribs of the frame plate by resilient forces of the first and second spring members, respectively.

Abstract: Substrates suitable to manufacture and products of a thin film semiconductor device are provided, by at first preparing a manufacturing substrate having a characteristic capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.

Abstract: Disclosed herein is a display device including a pair of substrates opposed to each other, a pixel region provided between the substrates, and an external wiring provided on an extension of one of the substrates. The external wiring is disposed in a recess formed on the extension. With this structure, the external wiring provided on the extension can be reliably protected to thereby improve the reliability of the display device.

Abstract: For manufacturing a thin film semiconductor device, first conducted is a film-making step to make a non-single-crystalline semiconductor thin film (4) on an insulating substrate (1). Next conducted is an annealing step to irradiate laser light (50) for once heating and melting the non-single-crystalline semiconductor thin film (4) and then changing it into a polycrystal in its cooling process. Thereafter, a processing step is conducted to form thin film transistors in an integrated form, which includes the polycrystalline semiconductor thin film (4) as their active layer. For the purpose of ensuring uniform crystallization and enlargement of grain sizes, in the annealing step, by using a laser oscillator (51) including an excimer laser source, the laser light (50) having a pulse width not shorter than 50 ns is shaped by an optical system (53) to form a rectangular cross-sectional area whose sides are not shorter than 10 mm to sequentially irradiate the semiconductor thin film (4).

Abstract: A telecommunications apparatus 10 includes a sub-rack unit 15 and a plurality of plug-in units inserted from a front side of the sub-rack unit 15 in a Y1 direction and mounted in the sub-rack unit 15. The plug-in unit 16 includes a plug-in unit main body and an aluminum case 41 that covers so as to envelope the plug-in unit main body. An intermediate guide rail member 22 is inserted from the front of the sub-rack unit 15 and mounted by tightening a lock bolt member similarly inserted from the front of the sub-rack unit 13.

Abstract: Substrates suitable to manufacture and products of a thin film semiconductor device are provided, by at first preparing a manufacturing substrate having a characteristic capable of enduring a process for forming a thin film transistor and a product substrate having a characteristic suitable to direct mounting of the thin film transistor in a preparatory step, then applying a bonding step to bond the manufacturing substrate to the product substrate for supporting the product substrate at the back, successively applying a formation step to form at least a thin film transistor to the surface of the product substrate in a state reinforced with the manufacturing substrate and, finally, applying a separation step to separate the manufacturing substrate after use from the product substrate.

Abstract: An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (32) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3).

Abstract: In crystallizing a semiconductor thin film of large area by overlapping regions of irradiation with a laser beam, uniform crystallinity of the film is achieved. A semiconductor thin film is crystallized by performing shaping laser light emitted to define a laser beam which has a predetermined intensity distribution in a predetermined irradiation region, and repeatedly irradiating the semiconductor thin film with the laser beam while scanning the film so that irradiation regions may be overlapped. The laser beam is shaped so that the sectional intensity distribution of the laser beam in the irradiation region as taken in the direction of the scanning may be convex, and that the peak of the intensity distribution lies at a position which is between the front end and rear end of the irradiation region in relation to the scanning direction and which is nearer to the front end with respect to the middle of the irradiation region.

Abstract: A thin film semiconductor device comprising an insulating substrate, a plurality of thin film transistors integrated on the insulating substrate, each thin film transistor including a gate electrode, a gate insulating film, a semiconductor thin film and an interlayer insulating film which are laminated in this order from the lower side, and the semiconductor thin film being formed with a channel region confronting the gate electrode, and a source region and a drain region which are located at both sides of the channel region, and a conductor film which is formed on the surface of the interlayer insulating film so as to be overlapped with the channel region. A display device having a pair of insulating substrates, electrooptical material held in the gap between the insulating substrates, a counter electrode formed in one of the insulating substrates, and a plurality of pixel electrodes and a plurality of thin film transistors which are integrated on the other insulating substrate.

Abstract: A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.

Abstract: A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal. The surface of the glass substrate 1 is covered by a buffer layer 2. The thin film transistor 3 formed on this buffer layer 2 has a polycrystalline semiconductor thin film 4 as an active layer. The buffer layer 2 includes at least a silicon nitride film and protects the thin film transistor 3 from contamination by alkali metals such as Na and has a thickness such that it can shield the thin film transistor 3 from an electric field created by localized alkali metal ions (Na+).

Abstract: A thin film semiconductor device comprising an insulating substrate, a plurality of thin film transistors integrated on the insulating substrate, each thin film transistor including a gate electrode, a gate insulating film, a semiconductor thin film and an interlayer insulating film which are laminated in this order from the lower side, and the semiconductor thin film being formed with a channel region confronting the gate electrode, and a source region and a drain region which are located at both sides of the channel region, and a conductor film which is formed on the surface of the interlayer insulating film so as to be overlapped with the channel region. A display device having a pair of insulating substrates, electrooptical material held in the gap between the insulating substrates, a counter electrode formed in one of the insulating substrates, and a plurality of pixel electrodes and a plurality of thin film transistors which are integrated on the other insulating substrate.

Abstract: A management server transfers initial registration information to a registered information memory section of a document input/output apparatus. Upon completion of initial registration, the management server notifies by electronic mail the user's personal computer of the completion of registration, and displays from a www server a handling method and a method of software installation. The management server notifies by electronic mail the user's personal computer of replacement timing of expendables or any hardware trouble.

Abstract: A thin film semiconductor device having improved operating characteristics and reliability of a thin film transistor formed on a glass substrate. The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal. The surface of the glass substrate 1 is covered by a buffer layer 2. The thin film transistor 3 formed on this buffer layer 2 has a polycrystalline semiconductor thin film 4 as an active layer. The buffer layer 2 includes at least a silicon nitride film and protects the thin film transistor 3 from contamination by alkali metals such as Na and has a thickness such that it can shield the thin film transistor 3 from an electric field created by localized alkali metal ions (Na+).

Abstract: A communication device includes a sub-rack unit and a plurality of plug-in units. The sub-rack unit includes a back wiring board having first connectors arranged in lines thereon, and a frame plate including vertical ribs and placed on said back wiring board so that the vertical ribs separate the lines of the first connectors. Each of the plug-in units includes: a printed board including top and bottom sides and parallel first and second sides, the printed board having second connectors provided on the first side thereof; a metal case including top and bottom faces, and parallel first and second side faces so as to cover the printed board; and first and second spring members. Each of said plug-in units is mounted in the sub-rack unit with the first and second connectors being connected so that the first and second side faces of the metal case are pressed outward against the vertical ribs of the frame plate by resilient forces of the first and second spring members, respectively.

Abstract: A telecommunications apparatus 10 includes a sub-rack unit 15 and a plurality of plug-in units inserted from a front side of the sub-rack unit 15 in a Y1 direction and mounted in the sub-rack unit 15. The plug-in unit 16 includes a plug-in unit main body and an aluminum case 41 that covers so as to envelope the plug-in unit main body. An intermediate guide rail member 22 is inserted from the front of the sub-rack unit 15 and mounted by tightening a lock bolt member similarly inserted from the front of the sub-rack unit 13.

Abstract: A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or less, and the protective insulating film is formed on any one of the active layer, and LDD region, and a source-drain region. A method for making a bottom-gate thin-film transistor, a liquid crystal display device including a TFT substrate using the bottom-gate thin-film transistor and a method for fabricating the same, and an organic EL device including the bottom-gate thin-film transistor and a method for fabricating the same are also disclosed.