Patents by Inventor Hisashi Shimizu

Hisashi Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11814561
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 14, 2023
    Assignee: KANTO DENKA KOGYO CO., LTD.
    Inventors: Hisashi Shimizu, Korehito Kato
  • Patent number: 11795396
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: October 24, 2023
    Assignee: KANTO DENKA KOGYO CO., LTD.
    Inventors: Hisashi Shimizu, Korehito Kato
  • Patent number: 11795397
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: October 24, 2023
    Assignee: KANTO DENKA KOGYO CO., LTD.
    Inventors: Hisashi Shimizu, Korehito Kato
  • Publication number: 20230307244
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
    Type: Application
    Filed: May 30, 2023
    Publication date: September 28, 2023
    Applicants: KIOXIA CORPORATION, KANTO DENKA KOGYO CO., LTD.
    Inventors: Takaya ISHINO, Toshiyuki SASAKI, Mitsuharu SHIMODA, Hisashi SHIMIZU
  • Publication number: 20230080587
    Abstract: A joining device includes: an electrode for transmitting a current to an object to be joined; a current supply section for generating the current supplied to the object due to a voltage being applied thereto; a current measurement section for measuring the current supplied to the object; and a first control unit for correcting the voltage applied to the current supply section based on a current value measured before a last time by the current measurement section such that a current value measured by the current measurement section becomes a target current value. A method for manufacturing a joined object includes: supplying a current, which is generated by applying a voltage to a current supply section, to the object to be joined; measuring the current supplied to the object; and correcting the voltage applied to the current supply section based on a ratio between the measured current value and a desired current value.
    Type: Application
    Filed: March 4, 2021
    Publication date: March 16, 2023
    Inventors: Toshihiko HAYASHI, Yasuo KADOYA, Shinya MIZUTANI, Hisashi SHIMIZU
  • Publication number: 20230079603
    Abstract: A valve (10) in accordance with an embodiment of the present invention includes a body (1) having a space in which a stem (3) and a ball (4) are housed, wherein an inner lid body (60) fixing the ball (4) in the space liquid-tightly partitions the space into a part in which the stem (3) is housed and a part in which the ball (4) is housed.
    Type: Application
    Filed: February 25, 2021
    Publication date: March 16, 2023
    Inventors: Masazumi FUNATO, Mitsuru HOSOKAWA, Tetsuya WATANABE, Osamu WATANABE, Hisashi SHIMIZU
  • Publication number: 20220338394
    Abstract: A composite material structure includes: a first composite material member including a first reinforcing fiber that is electrically conductive and impregnated with a first resin; a second composite material member including a second reinforcing fiber that is electrically conductive and impregnated with a second resin; an adhesive layer disposed between the first composite material member and the second composite material member to bond the first composite material member to the second composite material member; and an electromagnetic shielding member covering at least part of an area, exposed to an exterior, of the adhesive layer. At least one of the first and second composite material members has a predefined lightning current direction in which a lightning current generated by a lightning strike passes. The shielding member is disposed over an entire plane of a side face in a direction orthogonal to the lightning current direction.
    Type: Application
    Filed: April 15, 2022
    Publication date: October 20, 2022
    Inventors: Tatsufumi AOI, Kazuki YAMAWAKI, Akio IKEDA, Hisashi SHIMIZU
  • Patent number: 11437244
    Abstract: A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2?x?4, y+z?2x+2, and 0.5<z/y<2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: September 6, 2022
    Assignee: KANTO DENKA KOGYO CO., LTD.
    Inventors: Korehito Kato, Yoshihiko Iketani, Yukinobu Shibusawa, Hisashi Shimizu
  • Publication number: 20220135882
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC), A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, an
    Type: Application
    Filed: January 18, 2022
    Publication date: May 5, 2022
    Inventors: Hisashi SHIMIZU, Korehito KATO
  • Publication number: 20220135881
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Application
    Filed: January 18, 2022
    Publication date: May 5, 2022
    Inventors: Hisashi SHIMIZU, Korehito KATO
  • Publication number: 20220078950
    Abstract: A honeycomb structure includes an incoming end having a concave shape; an outgoing end having a convex shape; and a plurality of cells each having a polygonal cross section and serving as a channel for a fluid, the channel extending from the incoming end to the outgoing end. The plurality of cells are separated from each other by separator walls. At least one of the plurality of cells has an area of a channel cross section perpendicular to a longitudinal direction, the area increasing from the incoming end toward the outgoing end.
    Type: Application
    Filed: September 1, 2021
    Publication date: March 10, 2022
    Inventors: Yoshiaki ARAKAWA, Takashi IKEDA, Akio IKEDA, Hisashi SHIMIZU, Jun KURODA, Syusaku YAMAMOTO, Masashi KITAMURA, Shuji TANIGAWA, Daishi SUMI
  • Publication number: 20210388264
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Application
    Filed: October 25, 2019
    Publication date: December 16, 2021
    Inventors: Hisashi SHIMIZU, Korehito KATO
  • Publication number: 20210391178
    Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.
    Type: Application
    Filed: October 25, 2019
    Publication date: December 16, 2021
    Inventors: Hisashi SHIMIZU, Korehito KATO
  • Publication number: 20210193475
    Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
    Type: Application
    Filed: March 10, 2021
    Publication date: June 24, 2021
    Applicants: Kioxia Corporation, KANTO DENKA KOGYO CO., LTD.
    Inventors: Takaya ISHINO, Toshiyuki SASAKI, Mitsuharu SHIMODA, Hisashi SHIMIZU
  • Publication number: 20200234962
    Abstract: A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2?x?4, y+z?2x+2, and 0.5<z/y<2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
    Type: Application
    Filed: April 2, 2018
    Publication date: July 23, 2020
    Inventors: Korehito KATO, Yoshihiko IKETANI, Yukinobu SHIBUSAWA, Hisashi SHIMIZU
  • Patent number: 9726916
    Abstract: To provide a member bonding apparatus that can accurately position two members for bonding. Member alignment preprocessing device 15 adjusts to align one of the two members received by member receiving device 11 with another member in X and Y-axis directions so that the positions of bonding surfaces of the two members approximately correspond, adhesive application device 12 applies adhesive to a bonding surface of one of the two members approximately aligned, member alignment device 16 adjusts to align another member with one of the two members in X, Y, Z-axis and ?, ?, ?-axis directions based on images of the two members captured by a CCD camera so that positions of the bonding surfaces of the two members correspond, member bonding device 13 makes the bonding surfaces of the two members aligned be bonded to each other through the adhesive, and member delivery device 14 unloads and delivers the bonded member.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: August 8, 2017
    Assignee: Origin Electric Company, Limited
    Inventors: Koji Yamaguchi, Yutaka Matsumoto, Hisashi Shimizu, Tetsuya Okamoto
  • Publication number: 20150370098
    Abstract: To provide a member bonding apparatus that can accurately position two members for bonding. Member alignment preprocessing device 15 adjusts to align one of the two members received by member receiving device 11 with another member in X and Y-axis directions so that the positions of bonding surfaces of the two members approximately correspond, adhesive application device 12 applies adhesive to a bonding surface of one of the two members approximately aligned, member alignment device 16 adjusts to align another member with one of the two members in X, Y, Z-axis and ?, ?, ?-axis directions based on images of the two members captured by a CCD camera so that positions of the bonding surfaces of the two members correspond, member bonding device 13 makes the bonding surfaces of the two members aligned be bonded to each other through the adhesive, and member delivery device 14 unloads and delivers the bonded member.
    Type: Application
    Filed: January 28, 2014
    Publication date: December 24, 2015
    Inventors: Koji YAMAGUCHI, Yutaka MATSUMOTO, Hisashi SHIMIZU, Tetsuya OKAMOTO
  • Patent number: 8013056
    Abstract: A silicone resin composition comprising (A) a heat-curable organopolysiloxane having a melting point of 40-130° C., (B) a white pigment, (C) an inorganic filler, and (D) a curing catalyst is transfer or compression moldable at elevated temperatures into a cured product having white color, heat resistance, light resistance and minimal yellowing. The cured product is suited as a case in which an optoelectronic part is enclosed.
    Type: Grant
    Filed: December 24, 2008
    Date of Patent: September 6, 2011
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yusuke Taguchi, Kazutoshi Tomiyoshi, Tomoyoshi Tada, Hisashi Shimizu
  • Patent number: 7563854
    Abstract: Provided is a method of producing a high molecular weight organopolysiloxane with a polystyrene equivalent weight average molecular weight of at least 5×104, comprising the steps of producing an organopolysiloxane by subjecting a silane compound having a hydrolyzable group to a first hydrolysis and condensation, and then subjecting that organopolysiloxane to an additional second hydrolysis and condensation. The high molecular weight organopolysiloxane is stable, resistant to gelling, and resistant to cracking even when formed as a thick film. A resin composition comprising the high molecular weight organopolysiloxane and a condensation catalyst is useful for sealing an optical element and for producing an optical semiconductor device.
    Type: Grant
    Filed: October 26, 2006
    Date of Patent: July 21, 2009
    Assignee: Shin-Estu Chemical Co., Ltd.
    Inventors: Hisashi Shimizu, Toshio Shiobara, Tsutomu Kashiwagi
  • Publication number: 20090171013
    Abstract: A silicone resin composition comprising (A) a heat-curable organopolysiloxane having a melting point of 40-130° C., (B) a white pigment, (C) an inorganic filler, and (D) a curing catalyst is transfer or compression moldable at elevated temperatures into a cured product having white color, heat resistance, light resistance and minimal yellowing. The cured product is suited as a case in which an optoelectronic part is enclosed.
    Type: Application
    Filed: December 24, 2008
    Publication date: July 2, 2009
    Inventors: Yusuke TAGUCHI, Kazutoshi Tomiyoshi, Tomoyoshi Tada, Hisashi Shimizu