Abstract: A synchronous-rectifier type DC-DC converter includes a high-side main switch element, a low-side rectifying switch element, and a control drive circuit. The rectifying switch element includes a rectifying transistor element and a rectifying diode element connected in antiparallel with the rectifying transistor element. The control drive circuit detects an input voltage to the main switch element and determines the input voltage or a rate of increase in the input voltage. When the determined value exceeds a predetermined reference value, a complementary ON/OFF operation of the main switch element and the rectifying transistor element is released, and a state where both the main switch element and the rectifying transistor element are kept OFF for a time period that is longer than a dead-time during the complementary ON/OFF operation is set.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0?x?1, ?0.2?y?1.2, z?0.4 and 0.5?(x+y)/z?3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Abstract: A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

Abstract: A semiconductor device includes a spaced-channel IGBT and an antiparallel diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.

Abstract: A switching device contains a thin film containing an organic material disposed between at least two electrodes, and the organic material is, for example, a triphenylamine compound represented by the general formula (I):

Abstract: Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length.

Abstract: A non-aqueous ink-set for ink-jet recording comprising one or more inks each comprising a mixed solvent, a pigment and a resin and at least one of colors is constituted by a light colored ink and a dark colored ink different from each other in a pigment concentration, wherein a ratio (V1/V2) of viscosity (V1) of the mixed solvent contained in the light colored ink to viscosity (V2) of the mixed solvent contained in the dark colored ink satisfies Expression (1): 1.1<V1/V2<2.5??Expression (1).

Abstract: A nonaqueous ink-jet ink comprising at least solvents (A) and (B) cited below, a pigment, and a polymer compound, wherein the content of solvent (A) is 3-15% by weight based on the total weight of the ink-jet ink, and the content of solvent (B) is 50-90% by weight: Solvent (A): 1,3-dimethyl-2-imidazolidinone; Solvent (B): a solvent comprising at least one compound selected from the group consisting of the compounds represented by following Formulas (1) and (2): Formula (1) R1—(OX1)2—O—R2, and

Abstract: A semiconductor device includes a spaced-channel IGBT and an antiparalell diode that are formed in a same semiconductor substrate. The IGBT includes a base layer and insulated gate trenches by which the base layer is divided into a body region connected to an emitter and a floating region disconnected from the emitter. The IGBT is formed in a cell region of an IGBT region, and the diode is formed in a diode region. A boundary region of the IGBT region is located between the cell region and the diode region. A spacing between adjacent gate trenches in the boundary region is less than a spacing between adjacent gate trenches between which the floating region is located in the cell region.

Abstract: An ink-jet ink comprising Component (A), Component (B), and Component (C), wherein a content of Component (A) is 20-60% by weight, a content of Component (B) is 10-50% by weight, and when the content of Component (A) is 100% by weight, the total content ratio of a class of glycol, a class of polyol, and glycerin is 0-20% by weight, and a surface tension of the ink-jet ink is 18-27 mN/m; wherein Component (A) is 1,3-dimethyl-2-imidazolidinone or ?-butyrolactone, Component (B) is water, and Component (C) is a pigment.

Abstract: A discrete track type perpendicular magnetic recording medium having good crystal orientation and perpendicular magnetic anisotropy of a magnetic recording layer is disclosed. The medium is produced by a simple, inexpensive method. A soft magnetic backing layer, a base layer for crystal orientation, and a perpendicular magnetic recording layer are formed in this order on a nonmagnetic substrate, and a processing layer having a concavo-convex pattern comprising convex parts at a low density and concave parts at a higher density is provided between the nonmagnetic substrate and the perpendicular magnetic recording layer, the concavo-convex pattern shape of the processing layer being reflected on the perpendicular magnetic recording layer.

Abstract: A non-aqueous ink-set for ink-jet recording comprising one or more inks each comprising a mixed solvent, a pigment and a resin and at least one of colors is constituted by a light colored ink and a dark colored ink different from each other in a pigment concentration, wherein a ratio (V1/V2) of viscosity (V1) of the mixed solvent contained in the light colored ink to viscosity (V2) of the mixed solvent contained in the dark colored ink satisfies Expression (1): 1.1<V1/V2<2.

Abstract: An ink-jet ink comprising Component (A), Component (B), and Component (C), wherein a content of Component (A) is 20-60% by weight, a content of Component (B) is 10-50% by weight, and when the content of Component (A) is 100% by weight, the total content ratio of a class of glycol, a class of polyol, and glycerin is 0-20% by weight, and a surface tension of the ink-jet ink is 18-27 mN/m; wherein Component (A) is 1,3-dimethyl-2-imidazolidinone or ?-butyrolactone, Component (B) is water, and Component (C) is a pigment.

Abstract: The organic EL display device includes first and second sets of stripe electrodes; third and fourth sets of stripe electrodes crossing the stripe electrodes of the first and second sets; and pixels, each including a light emitting section, one of the electrodes of which is connected electrically to the stripe electrode of the first set, a transistor element connected electrically to the stripe electrode of the fourth set and to the other electrode of the light emitting section, the transistor element controlling the current flowing through the light emitting section, a first rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the second set, a second rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the third set, and a capacitor connected to the gate electrode of the transistor element and the stripe electrode of the fourth set.

Abstract: A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticles and the organic bistable compound.

Abstract: An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.

Abstract: The present invention provides a switching element in which an organic bistable material is disposed between two electrodes, this element having a high ratio of ON current to OFF current, a high threshold voltage, and a small spread. A switching element in which an organic bistable material layer comprising an organic bistable material having two stable values of resistance with respect to the applied voltage is disposed between at least two electrodes, wherein an organic material layer is provided between the organic bistable material layer and at least one of the electrodes. Electrically conductive fine particles are preferably dispersed in the organic materials layer.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.