Abstract: A driving mechanism having a driver-loose key provided between a rim base and a bead seat band mounted about the rim base of a multi-piece rim which has the rim base, the bead seat band, a pair of side rings and a lock ring. The driver-loose key is cross-shaped with the two portions thereof which are adapted to be inserted into a groove extending in the circumferential direction of the rim base between the rim base and the bead seat band being arc-shaped so as to have substantially the same curvature as that of the groove. With this structure the slippage of the bead seat band on the rim base can be minimized and the durability of the mechanism can be increased.

Abstract: A composite wheel for a vehicle including a disk, a rim having a rim base portion, a bead seat band mounted about the rim base portion, a side ring mounted on the bead seat band, and a lock ring provided between the rim base portion and the bead seat band for locking the bead seat band on the rim. An angle of a contact surface formed between the bead seat band and the lock ring is between 30.degree. and 40.degree. relative to an axis of the wheel so that slip at the contact surface between the bead seat band and the lock ring due to a load from a tire can be effectively prevented, while the sufficiency of the strength of each member in the wheel can be ensured.

Abstract: The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance.In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

Abstract: A bottom surface portion of a lockring groove defined by a rim base is formed to be an inclined surface on which a load in a radial direction acts through a lockring. A leg portion of the lockring having an annular body engaged thereto is formed to be an inclined surface so as to abut the inclined surface of the lockring groove defined by the rim base.

Abstract: A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

Abstract: A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.

Abstract: A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

Abstract: A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.