Abstract: A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

Abstract: An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.

Abstract: A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

Abstract: An electrical heater includes plural heating body plates arranged in parallel with each other to define an air passage between adjacent two thereof, a positive electrode member joined to one end side of each heating body plate, and a negative electrode member joined to the other end side of each heating body plate. In the electrical heater, the heating body plates are arranged to directly heat air passing through the air passage when electrical power is supplied to the heating body plates through the electrode members. Accordingly, the electrical heater can effectively heat air with a simple structure.

Abstract: A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

Abstract: A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

Abstract: A photomask includes a transparent substrate; a first mask pattern disposed on a first region of the transparent substrate; a second mask pattern disposed on a second region different from the first region of the transparent substrate; and a transparent film provided on the first mask pattern, having an optical thickness configured to make a focal position of the first mask pattern deeper than a focal position of the second mask pattern.

Abstract: An electrical heater includes plural heating body plates arranged in parallel with each other to define an air passage between adjacent two thereof, a positive electrode member joined to one end side of each heating body plate, and a negative electrode member joined to the other end side of each heating body plate. In the electrical heater, the heating body plates are arranged to directly heat air passing through the air passage when electrical power is supplied to the heating body plates through the electrode members. Accordingly, the electrical heater can effectively heat air with a simple structure.

Abstract: A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

Abstract: A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

Abstract: A semiconductor device with a dummy wiring pattern. The semiconductor device is capable of stabilizing the adhesively bonding state of a semiconductor element in which a semiconductor element is mounted on the printed circuit board. The printed circuit board includes a wiring pattern and an element mounting portion on which the semiconductor element is to be mounted and is fixed using an adhesive, wherein a dummy wiring pattern having a thickness nearly equal to that of the wiring pattern is provided on the element mounting portion and the semiconductor element is mounted on the dummy wiring pattern via the adhesive.

Abstract: Oral drugs for treating AIDS patients contain water-soluble mixed components contained in cultured mycelia or a culture filtrate solution of Himematsutake (Agaricus blazei).

Abstract: An object sensing apparatus comprises a distance measuring device for measuring a distance to an object to be sensed, and a filter member having a surface disposed in confronting and spaced-apart relation to the distance measuring device. The distance measuring device has a light projecting element for projecting light toward the object and a light receiving element for receiving the light projected by the light projecting element and reflected by the object. The filter member is disposed at a preselected angle of inclination with respect to the distance measuring device. When the light projecting element projects light toward the object, light reflected or scattered by the surface of the filter member is directed in a direction away from the light receiving element.

Abstract: An electrostatic sensor comprises a ground electrode defining an enclosure having a through-hole for permitting the passage of a body therethrough. A sensor electrode is disposed in the ground electrode. A detecting circuit is disposed in the ground electrode for detecting the passage of the body through the through-hole on the basis of a change in an electrostatic capacitance between the ground electrode and the sensor electrode.

Abstract: A mechanism for a sewing machine for use in forming stitches by use of a looper thread which is controlled by a looper. This mechanism is adapted so that the looper thread which is run from a thread-thru hole to a stitch forming station is prevented from skipping over a needle penetrating point when a looper is moved upon descending of a needle, whereby stitches are formed without any skip stitch.

Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.