Abstract: A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.

Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.

Abstract: A method of producing a polyolefin, which comprises polymerizing at least one olefin in the presence of a catalyst system comprising(A) a catalyst component prepared by bringing ethylene and/or an .alpha.-olefin in contact with a solid composite obtained by reacting a reaction product, which has been produced by reacting a uniform solution containing(i) at least one member selected from the group consisting of metal magnesium and hydroxylated organic compound, and oxygen-containing organic compounds of magnesium and(ii) at least one oxygen-containing organic compound of titanium with(iii) at least one organoaluminum compound and/or(iv) at least one silicon compound, with(v) at least one aluminum halide compound, thereby allowing the ethylene and/or the .alpha.-olefin to be absorbed into the solid composite, and(B) at least one catalyst component selected from the group consisting of organometallic compounds of metals of Groups Ia, IIa, IIb, IIIb and IVb of the Periodic Table.

Abstract: An article having a colored surface comprises an article having a working surface and a coating applied on the working surface comprising a cermet composed of alumina and one of chromium and nichrome and exhibiting a black silver color.

Abstract: A semiconductor element mounted on a substrate is sealed with a silicone gel which has a complex modulus of elasticity such that breakage of solder bumps due to thermal fatique occurs preferentially by shear stress thereto due to a difference between thermal expansion coefficients of the semiconductor element and the substrate, not by tension thereto due to thermal expansion of the silicone gel between the semiconductor element and the substrate.

Abstract: A manufacturing method of polyolefin characterized in that at least one kind of olefins is allowed to polymerize in the presence of a catalyst system comprising(A) solid catalyst ingredient (A) obtained through the successive reaction steps, wherein, with a homogeneous solution involving(i) at least one member selected from metallic magnesium and hydroxylated organic compounds and oxygen-containing organic compounds of magnesium, and(ii) at least one kind of oxygen-containing organic compounds of titanium, are allowed to react in sequence with:(iii) at least one kind of organoaluminum compounds, then(iv) at least one kind of silicon compounds and further(V) at least one kind of halogenated aluminum compounds and(B) at least one kind of catalyst ingredients (B) selected from organometallic compounds, the metal of which belongs to Ia, IIa, IIb, IIIb or IVb group in the periodic table.

Abstract: In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

Abstract: A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

Abstract: An inorganic film forming composition used for forming noncombustible coating films which have good adhesiveness and various other excellent properties. The composition comprises: colloidal silica dispersion, water-soluble organic amines, powdery aluminium compounds and powdery glasses and further may comprise water-soluble amino acids, thiourea, urea and water soluble salts of transition metals such as Cr, Mo, W, Fe, Co, Mn, V, etc. for forming a vehicle.