Patents by Inventor Hitoshi Matsuura

Hitoshi Matsuura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Coil-type electronic component and process for producing same
    Patent number: 8749339
    Abstract: A coil-type electronic component has a coil inside or on the surface of its base material wherein the base material in the coil-type electronic component is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. The coil-type electronic component can be produced at low cost and combines high magnetic permeability with high saturation magnetic flux density.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: June 10, 2014
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Hideki Ogawa, Atsushi Tanada, Hitoshi Matsuura, Kiyoshi Tanaka, Hiroshi Kishi, Kenji Kawano
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140145260
    Abstract: A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.
    Type: Application
    Filed: January 31, 2014
    Publication date: May 29, 2014
    Applicant: Renesas Electronics Corporation
    Inventors: Hitoshi MATSUURA, Yoshito NAKAZAWA, Tsuyoshi KACHI, Yuji YATSUDA
  • MAGNETIC MATERIAL AND COIL COMPONENT USING SAME
    Publication number: 20140139311
    Abstract: A magnetic material contains multiple metal grains constituted by soft magnetic alloy and oxide film formed on a surface of the metal grains, which soft magnetic alloy includes Fe and a metal element that oxidizes more easily than Fe, wherein the magnetic material forms a grain compact having first bonding parts where adjacent metal grains are contacted and directly bonded together, second bonding parts where adjacent metal grains are bonded together via the oxide film formed around the entire surface of said adjacent metal grains other than the first bonding parts, and voids formed in an area other than the first and second bonding parts and surrounded by the oxide film.
    Type: Application
    Filed: January 23, 2014
    Publication date: May 22, 2014
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hitoshi MATSUURA, Kenji OTAKE
  • MAGNETIC MATERIAL AND COIL COMPONENT
    Publication number: 20140132383
    Abstract: An object is to provide a magnetic material and coil component offering improved magnetic permeability and insulation resistance, while also offering improved high-temperature load, moisture resistance, water absorbency, and other reliability characteristics at the same time. A magnetic material that has multiple metal grains constituted by Fe—Si-M soft magnetic alloy (where M is a metal element that oxidizes more easily than Fe), as well as oxide film constituted by an oxide of the soft magnetic alloy and formed on the surface of the metal grains, wherein the magnetic material has bonding parts where adjacent metal grains are bonded together via the oxide film formed on their surface, as well as bonding parts where metal grains are directly bonded together in areas having no oxide film, and resin material is filled in at least some of the voids generating as a result of accumulation of the metal grains.
    Type: Application
    Filed: April 18, 2012
    Publication date: May 15, 2014
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hitoshi Matsuura, Masahiro Hachiya, Kenji Otake
  • Coil-type electronic component and its manufacturing method
    Patent number: 8723634
    Abstract: A coil-type electronic component has a coil inside or on an outer surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; the oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via the oxide layer.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: May 13, 2014
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Hideki Ogawa, Atsushi Tanada, Hitoshi Matsuura, Kiyoshi Tanaka, Hiroshi Kishi, Kenji Kawano
  • Coil-type electronic component and its manufacturing method
    Patent number: 8704629
    Abstract: A coil-type electronic component has a coil inside or on the surface of its base material and is characterized in that: the base material is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: April 22, 2014
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Hideki Ogawa, Atsushi Tanada, Hitoshi Matsuura, Kiyoshi Tanaka, Hiroshi Kishi, Kenji Kawano
  • LAMINATED INDUCTOR
    Publication number: 20140055224
    Abstract: A laminated inductor having an internal conductor forming region, as well as a top cover region and bottom cover region formed in a manner sandwiching the internal conductor forming region between top and bottom; wherein the internal conductor forming region has a magnetic part formed with soft magnetic alloy grains, as well as helical internal conductor embedded in the magnetic part; and at least one of the top cover region and bottom cover region (or preferably both) is/are formed with soft magnetic alloy grains whose average grain size is greater than that of grains in the internal conductor forming region including the soft magnetic alloy grains constituting the magnetic part.
    Type: Application
    Filed: November 1, 2013
    Publication date: February 27, 2014
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hitoshi MATSUURA, Takayuki ARAI, Kenji OTAKE
  • Semiconductor device and method of manufacturing the same
    Patent number: 8659078
    Abstract: A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique.
    Type: Grant
    Filed: March 10, 2013
    Date of Patent: February 25, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Hitoshi Matsuura, Yoshito Nakazawa, Tsuyoshi Kachi, Yuji Yatsuda
  • MAGNETIC MATERIAL AND COIL COMPONENT USING SAME
    Publication number: 20140049348
    Abstract: A magnetic material suitable for a coil component has multiple metal grains constituted by Fe—Si-M soft magnetic alloy (where M is a metal element that oxidizes more easily than Fe) and oxide film formed on the surface of the metal grains, wherein such magnetic material includes a grain compact having bonding parts where adjacent metal grains are bonded together via the oxide film formed on their surface, and bonding parts where metal grains are directly bonded together in areas where oxide film does not exist. The magnetic material is capable of improving both insulation resistance and magnetic permeability.
    Type: Application
    Filed: October 13, 2011
    Publication date: February 20, 2014
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hitoshi Matsuura, Kenji Otake
  • IE-type trench gate IGBT
    Patent number: 8633510
    Abstract: The invention of the present application provides an IE-type trench IGBT. In the IE-type trench IGBT, each of linear unit cell areas that configure a cell area is comprised principally of linear active and inactive cell areas. The linear active cell area is divided into an active section having an emitter region and an inactive section as seen in its longitudinal direction.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: January 21, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Hitoshi Matsuura, Yoshito Nakazawa
  • Laminated inductor
    Patent number: 8610525
    Abstract: A laminated inductor having an internal conductive wire forming region, as well as a top cover region and bottom cover region formed in a manner sandwiching the internal conductive wire forming region between top and bottom; wherein the internal conductive wire forming region has a magnetic part formed with soft magnetic alloy grains, as well as helical internal conductive wires embedded in the magnetic part and constituted by a conductor; and at least one of the top cover region and bottom cover region (or preferably both) is/are formed with soft magnetic alloy grains whose constituent elements are of the same types as those of, and whose average grain size is greater than that of, the soft magnetic alloy grains constituting the magnetic part in the internal conductive wire forming region.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: December 17, 2013
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Hitoshi Matsuura, Takayuki Arai, Kenji Otake
  • NARROW ACTIVE CELL IE TYPE TRENCH GATE IGBT AND A METHOD FOR MANUFACTURING A NARROW ACTIVE CELL IE TYPE TRENCH GATE IGBT
    Publication number: 20130328105
    Abstract: In an equal width active cell IE type IGBT, a wide active cell IE type IGBT, and the like, an active cell region is equal in trench width to an inactive cell region, or the trench width of the inactive cell region is narrower. Accordingly, it is relatively easy to ensure the breakdown voltage. However, with such a structure, an attempt to enhance the IE effect entails problems such as further complication of the structure. The present invention provides a narrow active cell IE type IGBT having an active cell two-dimensional thinned-out structure, and not having a substrate trench for contact.
    Type: Application
    Filed: May 28, 2013
    Publication date: December 12, 2013
    Inventor: Hitoshi MATSUURA
  • Laminated inductor and manufacturing method thereof
    Patent number: 8558652
    Abstract: Provided is a laminated inductor having a magnetic body, a conductor part covered in a manner directly contacting the magnetic body, and external terminals provided on the outside of the magnetic body and conducting to the conductor part; wherein the magnetic body is a laminate constituted by layers containing soft magnetic alloy grains, and the soft magnetic alloy grain contacting the conductor part is flattened on the conductor part side.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: October 15, 2013
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Takayuki Arai, Hitoshi Matsuura, Kenji Otake
  • Laminated inductor
    Patent number: 8525630
    Abstract: A laminated inductor having a laminate structure constituted by magnetic layers and internal conductive wire-forming layers, wherein the magnetic layer is formed by soft magnetic alloy grains, the internal conductive wire-forming layer has an internal conductive wire and a reverse pattern portion around it, and the reverse pattern portion is formed by soft magnetic alloy grains whose constituent elements are of the same types as those of, and whose average grain size is greater than that of, the soft magnetic alloy grains constituting the magnetic layer.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: September 3, 2013
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Tomomi Kobayashi, Hitoshi Matsuura, Takayuki Arai, Masahiro Hachiya, Kenji Otake
  • COIL-TYPE ELECTRONIC COMPONENT AND PROCESS FOR PRODUCING SAME
    Publication number: 20130200970
    Abstract: A coil-type electronic component has a coil inside or on the surface of its base material wherein the base material in the coil-type electronic component is constituted by a group of grains of a soft magnetic alloy containing iron, silicon and other element that oxidizes more easily than iron; the surface of each soft magnetic alloy grain has an oxide layer formed on its surface as a result of oxidization of the grain; this oxide layer contains the other element that oxidizes more easily than iron by a quantity larger than that in the soft magnetic alloy grain; and grains are bonded with one another via this oxide layer. The coil-type electronic component can be produced at low cost and combines high magnetic permeability with high saturation magnetic flux density.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 8, 2013
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hideki Ogawa, Atsushi Tanada, Hitoshi Matsuura, Kiyoshi Tanaka, Hiroshi Kishi, Kenji Kawano
  • MAGNETIC MATERIAL AND COIL COMPONENT USING THE SAME
    Publication number: 20130176098
    Abstract: A magnetic material constituted by a grain compact 1 obtained by shaping metal grains 11 and then heat-treating them in an oxidizing ambience, wherein the metal grains 11 are made of a Fe—Cr—Si alloy and their FeMetal/(FeMetal+FeOxide) ratio as measured before shaping by XPS, with respect to the sum of integral values at the peaks of 709.6 eV, 710.7 eV and 710.9 eV, or FeOxide, and peak integral value at 706.9 eV, or FeMetal, is 0.2 or more.
    Type: Application
    Filed: July 11, 2012
    Publication date: July 11, 2013
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Hitoshi MATSUURA, Hideki OGAWA, Atsushi TANADA, Kiyoshi TANAKA, Kenji OTAKE
  • Semiconductor device and manufacturing method of the same
    Patent number: 8471333
    Abstract: A trench is formed so as to reach a p?-type epitaxial layer from an upper surface of a source region. A gate electrode is formed so as to bury the trench. Each of body contact trenches is formed away from the gate electrode. A body contact region is formed at the bottom of the body contact trench. An n-type semiconductor region that is a feature of the present invention is formed in a layer below each body contact region. The impurity concentration of the n-type semiconductor region is higher than a channel forming area and lower than the body contact region.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: June 25, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Hitoshi Matsuura, Yoshito Nakazawa
  • Power MISFET semiconductor device
    Patent number: 8455943
    Abstract: Provided is a technology, in a semiconductor device having a power MISFET and a Schottky barrier diode on one semiconductor substrate, capable of suppressing a drastic increase in the on-resistance of the power MISFET while making the avalanche breakdown voltage of the Schottky barrier diode greater than that of the power MISFET. In the present invention, two epitaxial layers, one having a high doping concentration and the other having a low doping concentration, are formed over a semiconductor substrate and the boundary between these two epitaxial layers is located in a region equal in depth to or shallower than the bottom portion of a trench.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: June 4, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Yoshito Nakazawa, Hitoshi Matsuura
  • Laminated inductor
    Patent number: 8427265
    Abstract: A laminated inductor includes a laminate constituted by multiple magnetic material layers, and coil conductors formed in a spiral pattern in the laminate. The magnetic material layers are layers of a magnetic material having multiple metal grains constituted by a Fe—Si-M soft magnetic alloy and oxide film formed on the surface of the metal grains. The magnetic material has bonding portions where adjacent metal grains are bonded via the oxide film formed on the respective surfaces of the adjacent metal grains as well as bonding portions of metal grains bonding to each other in areas where no oxide film is present, and at least some of the voids generated by agglomeration of the metal grains are filled with a resin material.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: April 23, 2013
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Masahiro Hachiya, Takuya Ishida, Takayuki Arai, Kenji Otake, Hitoshi Matsuura
  • Magnetic material and coil component using the same
    Patent number: 8416051
    Abstract: A magnetic material constituted by a grain-compacted body comprising a plurality of metal grains made of a Fe—Si—M soft magnetic alloy (where M is a metal element more easily oxidized than Fe) and an oxide film formed on the surface of the metal grains; wherein there are bonding portions via the oxide film formed on the surfaces of adjacent metal grains and direct bonding portions of metal grains in locations where the oxide film is not present.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: April 9, 2013
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Hitoshi Matsuura, Kenji Otake