Abstract: Please replace the abstract with the following: To provide a thin film capacitor capable of reducing a connection resistance between a terminal electrode and a capacitance electrode. A thin film capacitor includes: unit capacitors to stacked to one another through an insulating layer; and via conductors. The unit capacitor includes: a capacitance electrode and a dummy electrode which are provided on one surface of a dielectric layer and a capacitance electrode and a dummy electrode which are provided on the other surface of the dielectric layer. The via conductor penetrates a stacked body so as to contact dummy electrodes, and capacitance electrodes. The via conductor penetrates the stacked body so as to contact dummy electrodes, and capacitance electrodes.

Abstract: A thin film capacitor 1 includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein the other of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the upper surface of the protective insulating film and partly overlapping the other of the capacitor electrode and a second section positioned on the side surface of the protective insulating film so as to contact the one of the capacitor electrodes. The other of the terminal electrodes is not formed on the upper surface of the protective insulating film.

Abstract: A thin film capacitor includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein another of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the protective insulating film so as to overlap the other of the capacitor electrodes, a second section positioned on the protective insulating film so as not to overlap the other of the capacitor electrodes, and a third section connecting the first and second sections.

Abstract: To provide a multilayer thin film capacitor having high stiffness and being unlikely to undergo warpage. A multilayer thin film capacitor includes thin film capacitors, a resin layer positioned between the thin film capacitors and including a glass cloth, a terminal electrode connected to upper electrodes, and a terminal electrode connected to lower electrodes. Thus, there can be provided a multilayer thin film capacitor with high stiffness.

Abstract: An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.

Abstract: To provide a thin film capacitor with excellent heat dissipation performance. A thin film capacitor includes: a lower electrode layer made of a metal foil; an upper electrode layer covering a surface of the lower electrode layer through a dielectric layer; a passivation layer covering the surface of the lower electrode layer so as to embed therein the dielectric layer and upper electrode layer; terminal electrodes provided on the passivation layer; a via conductor penetrating the passivation layer and connecting the terminal electrode and lower electrode layer; and a via conductor penetrating the passivation layer and connecting the terminal electrode and upper electrode layer. The terminal electrode has a planer size larger than that of the terminal electrode, and the via conductor has a sectional area larger than that of the via conductor.

Abstract: A thin film capacitor includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein another of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the protective insulating film so as to overlap the other of the capacitor electrodes, a second section positioned on the protective insulating film so as not to overlap the other of the capacitor electrodes, and a third section connecting the first and second sections.

Abstract: A thin film capacitor 1 includes a dielectric layer, capacitor electrodes formed respectively on first and second surfaces of the dielectric layer, a protective insulating film formed on the first surface of the dielectric layer so as to embed therein one of the capacitor electrodes, a protective insulating film formed on the second surface of the dielectric layer so as to embed therein the other of the capacitor electrodes, and terminal electrodes connected respectively to the capacitor electrodes. One of the terminal electrodes includes a first section positioned on the upper surface of the protective insulating film and partly overlapping the other of the capacitor electrode and a second section positioned on the side surface of the protective insulating film so as to contact the one of the capacitor electrodes. The other of the terminal electrodes is not formed on the upper surface of the protective insulating film.

Abstract: A thin film capacitor includes a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer. The thin film capacitor includes an intermediate layer between the dielectric layer and the second electrode layer. The intermediate layer includes at least one stacking unit including a first intermediate layer and a second intermediate layer stacked in contact with the first intermediate layer. The first intermediate layer of the at least one stacking unit closest to the dielectric layer is stacked in contact with the dielectric layer. The first intermediate layer includes a first metal (M1) as a main component. The second intermediate layer includes a second metal (M2), different from the first metal, as a main component.

Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/?m) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitor part having a lower electrode, an inner electrode, and a dielectric layer positioned between the lower electrode and the inner electrode, an insulating layer covering the capacitor part, a terminal electrode provided on the insulating layer, and a plurality of via holes penetrating the insulating layer so that the terminal electrode and the inner electrode of the capacitor part are connected to each other via the plurality of via holes. The terminal electrode includes a via region on which the plurality of via holes are arranged and having a ring-shaped, and a bonding region surrounded by the via region and having flat-shaped.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Abstract: An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.

Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/?m) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

Abstract: Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40?x?0.90 and 0.90?y?1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2? of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2? of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K? ray as an X-ray source is 3.00 or more.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

Abstract: A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a<X1 and X2a?1000 kJ/mol are satisfied or X2b<X1 and X2b?1000 kJ/mol are satisfied.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.