Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Abstract: An object of the present disclosure is to provide a circuit board capable of achieving improved heat dissipation characteristics. The circuit board includes a substrate having a ceramic board as a base material; and a thin film capacitor mounted on the substrate such that a mounting surface faces the conductor layer. The thin film capacitor includes the dielectric layer, first and second capacitor electrodes, formed on one and the other surfaces of the dielectric layer. The capacitor electrode is connected to the wiring pattern included in the conductor layer. The capacitor electrode or a terminal electrode connected thereto is exposed to the upper surface of the thin film capacitor that faces away from the mounting surface.

Abstract: A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that “x” denotes a reciprocal (1/?m) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

Abstract: Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40?x?0.90 and 0.90?y?1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2? of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2? of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K? ray as an X-ray source is 3.00 or more.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

Abstract: A thin film capacitor having a multilayer structure including a first electrode, a first dielectric layer, a second dielectric layer, and a second electrode in this order. The second dielectric layer and the second electrode are in contact. The first dielectric layer includes a perovskite type compound. The second dielectric layer includes a perovskite type compound or an oxide of M. When X1 and X2a represents an absolute value of an average energy for formation of an oxide of a cationic element included in a B site of the perovskite type compound included in the first dielectric layer and the second dielectric layer respectively, and X2b represents an absolute value of an average energy for formation of an oxide of M included in the second dielectric layer, then X2a<X1 and X2a?1000 kJ/mol are satisfied or X2b<X1 and X2b?1000 kJ/mol are satisfied.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

Abstract: The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr1-x, Cax)m(Ti1-yHfy)O3-?N?, in which 0<x?0.15, 0<y?0.15, 0.90?m?1.15, and 0<??0.05 are satisfied.

Abstract: To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (Sr1-xCax)m(Ti1-yHfy)O3-?N?, in which 0.15<x?0.90, 0<y?0.15, 0.90?m?1.15, 0<??0.05 are satisfied.

Abstract: A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 is provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 ?m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

Abstract: Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

Abstract: A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 ?m or more and 8 ?m or less.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.