Patents by Inventor Hitoshi Saita

Hitoshi Saita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070049026
    Abstract: A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel, and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.
    Type: Application
    Filed: August 24, 2006
    Publication date: March 1, 2007
    Applicant: TDK Corporation
    Inventors: Yuki Miyamoto, Hitoshi Saita
  • Publication number: 20070025059
    Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.
    Type: Application
    Filed: July 26, 2006
    Publication date: February 1, 2007
    Applicant: TDK CORPORATION
    Inventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
  • Publication number: 20060071263
    Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.
    Type: Application
    Filed: September 28, 2005
    Publication date: April 6, 2006
    Applicant: TDK CORPORATION
    Inventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
  • Publication number: 20060072282
    Abstract: The present invention provides a dielectric thin film whose composition is expressed by the formula (Ba1-xSrx)yTiO3 (0.18?x?0.45, 0.96?y?1.04), and whose peak intensity ratio I(100)I(110) is from 0.02 to 2.0 when I(100) is the peak intensity of the diffraction line of the (100) plane, and I(110) is the peak intensity of the diffraction line of the (110) plane in an X-ray diffraction chart of the dielectric thin film.
    Type: Application
    Filed: September 27, 2005
    Publication date: April 6, 2006
    Applicant: TDK CORPORATION
    Inventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
  • Patent number: 6402979
    Abstract: There is disclosed a magnetic ferrite material obtained by calcining a raw material, forming a calcined powder into a desired shape and sintering to contain Fe2O3, MnO and ZnO as main components, the magnetic ferrite material with a low power loss is realized by setting the coefficient of variation (CV value) of the content of a Ca component precipitated along a grain boundary in a range of 1 to 60%, and the magnetic ferrite material is manufactured by calcining the raw material containing Fe2O3, MnO and ZnO as the main components to obtain the calcined powder in which that the S component content is in a range of 1 to 200 ppm, and forming the calcined powder into the desired shape and sintering.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: June 11, 2002
    Assignee: TDK Corporation
    Inventors: Hitoshi Saita, Tomofumi Kuroda, Naoyoshi Sato
  • Patent number: 6077453
    Abstract: Provided are an Mn--Zn ferrite in which the core loss is low and Bs is high at high temperatures; a transformer capable of being small-sized and suitable to use at high temperatures; and a method for efficiently driving the transformer. Also provided is a transformer capable of being small-sized and suitable to use in a broad temperature range including high temperatures. Further provided are a high-efficiency transformer capable of being small-sized, in which the core loss in the ferrite core is low and the saturation magnetic flux density is high therein at the temperature at which the transformer is driven; and a high-efficiency driving method for the transformer. Depending on its use, Mn--Zn ferrite to be the ferrite core for the transformers comprises, as the essential components, specific amounts of Fe.sub.2 O.sub.3, ZnO and MnO, and, as the side components, specific amounts of SiO.sub.2, CaCO.sub.3, Nb.sub.2 O.sub.5 and ZrO.sub.2. The core of the transformers is made of the Mn--Zn ferrite.
    Type: Grant
    Filed: January 15, 1999
    Date of Patent: June 20, 2000
    Assignee: TDK Corporation
    Inventors: Hitoshi Saita, Tomofumi Kuroda, Shigeo Okamoto, Naoyoshi Sato
  • Patent number: 6033594
    Abstract: A ferrite which has a high initial permeability, excellent anti-stress properties and excellent temperature characteristic, obviates the use of lead, and is inexpensive, the ferrite being capable of materialize the narrow tolerance and high reliability of a resin mold type inductor without causing environmental pollution, the ferrite having a main component containing at least iron oxide and nickel oxide, an additive containing at least one of bismuth oxide, vanadium oxide, phosphorus oxide and boron oxide, a first auxiliary component containing silicon oxide and a second auxiliary component containing at least one of magnesium oxide, calcium oxide, barium oxide and strontium oxide, the content of the additive being 0.5 to 15 wt % based on the main component, the content of each auxiliary component being 0.1 to 10.0 wt % based on the main component, and a resin mold type inductor for which the above ferrite is applied.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: March 7, 2000
    Assignee: TDK Corporation
    Inventors: Yasushi Enokido, Ryo Yokoyama, Hitoshi Saita, Naoyoshi Sato