Patents by Inventor Hitoshi Saita
Hitoshi Saita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8498095Abstract: A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 ?m2 to 7.0 ?m2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.Type: GrantFiled: November 30, 2010Date of Patent: July 30, 2013Assignee: TDK CorporationInventors: Yoshihiko Yano, Yasunobu Oikawa, Kenji Horino, Hitoshi Saita
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Patent number: 8315038Abstract: A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3??(1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97?y?0.995.Type: GrantFiled: April 8, 2010Date of Patent: November 20, 2012Assignee: TDK CorporationInventors: Hitoshi Saita, Naoto Tsukamoto, Akira Shibue, Kenji Horino
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Patent number: 8294036Abstract: In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.Type: GrantFiled: March 25, 2009Date of Patent: October 23, 2012Assignee: TDK CorporationInventors: Shinichiro Kakei, Kenji Horino, Hitoshi Saita, Yasunobu Oikawa
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Patent number: 8218287Abstract: A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.Type: GrantFiled: March 19, 2010Date of Patent: July 10, 2012Assignee: TDK CorporationInventors: Akira Shibue, Yoshihiko Yano, Hitoshi Saita, Kenji Horino
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Patent number: 8149584Abstract: In a dielectric element, the angle ? made by either the top face or the bottom face and the side faces is either 0°<?<89°, or is 91°<?<180°, and is an angle other than 89°???91°. By this means, the area of contact of the side faces of the dielectric element with a glass epoxy resin substrate and with insulating material is increased, adhesion with the resin substrates is improved, and strength and reliability can be enhanced when buried between the two resin substrates.Type: GrantFiled: March 25, 2009Date of Patent: April 3, 2012Assignee: TDK CorporationInventors: Hitoshi Saita, Kenji Horino, Yasunobu Oikawa, Shinichiro Kakei
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Publication number: 20110128669Abstract: A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor 100 according to the present embodiment, because through holes H are formed in internal electrodes 3, 5, 7, and 9 containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 ?m2 to 7.0 ?m2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes 3, 5, 7, and 9 is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes 3, 5, 7, and 9 and dielectric layers 2, 4, 6, 8, and 10, and as a result, the yield is enhanced.Type: ApplicationFiled: November 30, 2010Publication date: June 2, 2011Applicant: TDK CORPORATIONInventors: Yoshihiko YANO, Yasunobu OIKAWA, Kenji HORINO, Hitoshi SAITA
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Patent number: 7929272Abstract: A dielectric device having a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram ?1.3.Type: GrantFiled: June 4, 2007Date of Patent: April 19, 2011Assignee: TDK CorporationInventors: Shinichiro Kakei, Hitoshi Saita, Kuniji Koike, Kenji Horino
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Patent number: 7883905Abstract: It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.Type: GrantFiled: July 28, 2006Date of Patent: February 8, 2011Assignee: TDK CorporationInventors: Hitoshi Saita, Kiyoshi Uchida, Kenji Horino, Eri Aizawa
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Publication number: 20100265632Abstract: The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.Type: ApplicationFiled: April 8, 2010Publication date: October 21, 2010Applicant: TDK CORPORATIONInventors: Hitoshi SAITA, Naoto TSUKAMOTO, Akira SHIBUE, Kenji HORINO
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Publication number: 20100246092Abstract: A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.Type: ApplicationFiled: March 19, 2010Publication date: September 30, 2010Applicant: TDK CorporationInventors: Akira SHIBUE, Yoshihiko Yano, Hitoshi Saita, Kenji Horino
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Patent number: 7713877Abstract: A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.Type: GrantFiled: August 24, 2006Date of Patent: May 11, 2010Assignee: TDK CorporationInventors: Yuki Miyamoto, Hitoshi Saita
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Publication number: 20090246361Abstract: The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Applicant: TDK CORPORATIONInventors: Hitoshi SAITA, Naoto TSUKAMOTO, Akira SHIBUE, Kenji HORINO
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Publication number: 20090242256Abstract: In a dielectric element, the angle ? made by either the top face or the bottom face and the side faces is either 0°<?<89°, or is 91°<?<180°, and is an angle other than 89°???91°. By this means, the area of contact of the side faces of the dielectric element with a glass epoxy resin substrate and with insulating material is increased, adhesion with the resin substrates is improved, and strength and reliability can be enhanced when buried between the two resin substrates.Type: ApplicationFiled: March 25, 2009Publication date: October 1, 2009Applicant: TDK CORPORATIONInventors: Hitoshi Saita, Kenji Horino, Yasunobu Oikawa, Shinichiro Kakei
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Publication number: 20090242257Abstract: In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.Type: ApplicationFiled: March 25, 2009Publication date: October 1, 2009Applicant: TDK CORPORATIONInventors: Shinichiro KAKEI, Kenji HORINO, Hitoshi SAITA, Yasunobu OIKAWA
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Patent number: 7561406Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.Type: GrantFiled: March 29, 2007Date of Patent: July 14, 2009Assignee: TDK CorporationInventors: Hitoshi Saita, Yuko Saya, Kiyoshi Uchida, Kenji Horino
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Publication number: 20090176345Abstract: It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.Type: ApplicationFiled: July 28, 2006Publication date: July 9, 2009Applicant: TDK CORPORATIONInventors: Hitoshi Saita, Kiyoshi Uchida, Kenji Horino, Eri Aizawa
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Patent number: 7539005Abstract: A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and a nickel-based alloy.Type: GrantFiled: July 26, 2006Date of Patent: May 26, 2009Assignee: TDK CorporationInventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
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Patent number: 7382013Abstract: To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a method of production of the same, a dielectric thin film containing oxides such as barium strontium titanate expressed by the formula (BaxSr(1-x))aTiO3 (0.5<x?1.0, 0.96<a?1.00) and having a thickness of not more than 500 nm and a method of production of a thin film dielectric device including a step of annealing the dielectric thin film in an atmosphere of an oxidizing gas after forming a dielectric thin film on a conductive electrode.Type: GrantFiled: September 28, 2005Date of Patent: June 3, 2008Assignee: TDK CorporationInventors: Kiyoshi Uchida, Kenji Horino, Hitoshi Saita
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Publication number: 20070278627Abstract: A dielectric device comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram?1.3.Type: ApplicationFiled: June 4, 2007Publication date: December 6, 2007Applicant: TDK CORPORATIONInventors: Shinichiro Kakei, Hitoshi Saita, Kuniji Koike, Kenji Horino
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Publication number: 20070230086Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.Type: ApplicationFiled: March 29, 2007Publication date: October 4, 2007Applicant: TDK CORPORATIONInventors: Hitoshi Saita, Yuko Saya, Kiyoshi Uchida, Kenji Horino