Abstract: A particle size distribution measurement device includes a cell holding body 31 that holds a measurement cell 2 containing a measurement sample and a dispersion medium and a reference cell 6 containing a reference sample and is rotated by a motor 322, and a cell discrimination mechanism 7 that discriminates the cells 2, 6 passing through a predetermined rotation position by using a magnetic force or electrostatic capacitance.

Abstract: Crystals of the compound represented by formula (1), a method for the production thereof, and a method for producing an antibody-drug conjugate using the crystals.

Abstract: A field effect transistor comprising: a non-doped diamond layer which has a hydrogen-terminated surface; first and second p+diamond layers which are formed on the non-doped diamond layer and sandwich a hydrogen-terminated region; a source electrode which is formed on the first p+diamond layer and is made of metal; a drain electrode which is formed on the second p+diamond layer and is made of metal; an insulating layer which is formed on the hydrogen-terminated region of the non-doped diamond layer; and a gate electrode which is formed on the insulating layer, a mutual conductance being equal to or higher than 0.5 mS/mm at room temperatures, after an X-ray is applied for an amount of 5 Mgy.

Abstract: To fulfill a sealing function for a fluid within a short period of time when a pump configured to pressure-feed the fluid is activated, provided are a seal ring, including: a first side surface (20); a second side surface (30) being a side surface on a side opposite to the first side surface (20); and a first side-surface side projecting portion (40) formed on the first side surface (20), in which a distal end portion (42) of the first side-surface side projecting portion (40) projects most toward an outward side from the first side surface (20) as compared to an entire surface of the first side surface (20) except for the distal end portion (42), and a sealing device using the same.

Abstract: Provided is a seal ring causing less friction and having a low oil leakage property even under a state in which a shaft rotation frequency or a housing rotation frequency is high, and being capable of reducing a shaft rotation torque. A level difference portion that forms a second width smaller than a first width is formed on a longitudinal sectional shape of the seal ring as viewed in a circumferential direction from a seal ring outer peripheral surface side toward a seal ring inner peripheral surface side.

Abstract: A cutting tap includes thread ridges, roots formed between the respective axially adjacent pairs of thread ridges, and a plurality of deburring thread grooves arranged at a constant pitch toward the axial front side of the cutting tap from the rearmost ones of the roots in which the deburring thread grooves are formed, and formed such that a groove bottom diameter of the deburring thread grooves gradually decreases toward the axial front side of the cutting tap. The respective deburring thread grooves have groove bottom diameter reliefs by which the groove bottom dimeter gradually decreases from the front side toward the rear side of each deburring thread groove in the rotation direction of the cutting tap, the groove bottom diameter reliefs being set to be larger than effective diameter reliefs of the thread grooves.

Abstract: To fulfill a sealing function for a fluid within a short period of time when a pump configured to pressure-feed the fluid is activated, provided are a seal ring, including: a first side surface (20); a second side surface (30) being a side surface on a side opposite to the first side surface (20); and a first side-surface side projecting portion (40) formed on the first side surface (20), in which a distal end portion (42) of the first side-surface side projecting portion (40) projects most toward an outward side from the first side surface (20) as compared to an entire surface of the first side surface (20) except for the distal end portion (42), and a sealing device using the same.

Abstract: Provided is a seal ring causing less friction and having a low oil leakage property even under a state in which a shaft rotation frequency or a housing rotation frequency is high, and being capable of reducing a shaft rotation torque. A level difference portion that forms a second width smaller than a first width is formed on a longitudinal sectional shape of the seal ring as viewed in a circumferential direction from a seal ring outer peripheral surface side toward a seal ring inner peripheral surface side.

Abstract: A plurality of synapse determination circuits are provided on a one-to-one basis for a plurality of gate electrodes of a multi-input gate electrode in a neuron element. With respect to first image regions where “1” is repeatedly inputted in correspondence with group information, the synapse determination circuits corresponding to the first image regions are excitatory synapses. With respect to second image regions where “0” is repeatedly inputted in correspondence with the group information, the synapse determination circuits corresponding to the second image regions are inhibitory synapses.

Abstract: A semiconductor photocatalyst includes first and second layers made of first and second materials, respectively. Band gaps of the first and second materials are equal to or smaller than 1.5 eV and 2.5 eV, respectively. A lower electric potential of a conduction band of the second material is disposed on a positive side from the first material. An upper electric potential of a valence band of the second material is disposed on a positive side from the first material and from an oxidation electric potential of water when the first and second layers are bonded to each other in the hetero junction manner. The lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen when the first and second layers are bonded to each other in the hetero junction manner.

Abstract: A cutting tap includes thread ridges, roots formed between the respective axially adjacent pairs of thread ridges, and a plurality of deburring thread grooves arranged at a constant pitch toward the axial front side of the cutting tap from the rearmost ones of the roots in which the deburring thread grooves are formed, and formed such that a groove bottom diameter of the deburring thread grooves gradually decreases toward the axial front side of the cutting tap. The respective deburring thread grooves have groove bottom diameter reliefs by which the groove bottom dimeter gradually decreases from the front side toward the rear side of each deburring thread groove in the rotation direction of the cutting tap, the groove bottom diameter reliefs being set to be larger than effective diameter reliefs of the thread grooves.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: Provided is an engine mount for a power unit. The power unit is supported by a support via the engine mount. The engine mount includes a first mounting bracket, a second mounting bracket, and a coating film. The coating film is applied to at least one of a surface of a first mounting portion and a surface of a second mounting portion. The coating film includes a cured-resin base layer made of a phenolic-resin adhesive, and an outer layer made of an epoxy-resin antirust paint and laminated on the cured-resin base layer. A thickness of the cured-resin base layer is 5 ?m or more. A thickness of the outer layer is less than 15 ?m. A sum total of the thickness of the cured-resin base layer and the thickness of the outer layer is equal to or more than 15 ?m and equal to or less than 30 ?m.

Abstract: A semiconductor photocatalyst includes first and second layers made of first and second materials, respectively. Band gaps of the first and second materials are equal to or smaller than 1.5 eV and 2.5 eV, respectively. A lower electric potential of a conduction band of the second material is disposed on a positive side from the first material. An upper electric potential of a valence band of the second material is disposed on a positive side from the first material and from an oxidation electric potential of water when the first and second layers are bonded to each other in the hetero junction manner. The lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen when the first and second layers are bonded to each other in the hetero junction manner.

Abstract: Provided is an engine mount for a power unit. The power unit is supported by a support via the engine mount. The engine mount includes a first mounting bracket, a second mounting bracket, and a coating film. The coating film is applied to at least one of a surface of a first mounting portion and a surface of a second mounting portion. The coating film includes a cured-resin base layer made of a phenolic-resin adhesive, and an outer layer made of an epoxy-resin antirust paint and laminated on the cured-resin base layer. A thickness of the cured-resin base layer is 5 ?m or more. A thickness of the outer layer is less than 15 ?m. A sum total of the thickness of the cured-resin base layer and the thickness of the outer layer is equal to or more than 15 ?m and equal to or less than 30 ?m.

Abstract: Means for reducing an arsenic ion concentration in the solution to the degree of ultra trace amount are provided. Ammonium molybdate is supported by a nanostructure material by mixing the nanostructure material, which is obtained after the nanostructure material such as an alumina reacts with a surfactant, in the solution containing the ammonium molybdate. The nanostructure material supporting an arsenic ion adsorption compound such as ammonium molybdate can selectively adsorb and remove trace of arsenic ion in the solution by a room temperature treatment without a water conditioning such as pH control. In our removal system of arsenic, extra posttreatments are not needed because special pretreatments are not carried out, and special heating equipments are not used. Accordingly, our removal system of arsenic can be constructed at low cost. Furthermore, it can supply an arsenic-free solution by be constructed at multi stages.

Abstract: A plurality of synapse determination circuits are provided on a one-to-one basis for a plurality of gate electrodes of a multi-input gate electrode in a neuron element. With respect to first image regions where “1” is repeatedly inputted in correspondence with group information, the synapse determination circuits corresponding to the first image regions are excitatory synapses. With respect to second image regions where “0” is repeatedly inputted in correspondence with the group information, the synapse determination circuits corresponding to the second image regions are inhibitory synapses.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: Means for reducing an arsenic ion concentration in the solution to the degree of ultra trace amount are provided. Ammonium molybdate is supported by a nanostructure material by mixing the nanostructure material, which is obtained after the nanostructure material such as an alumina reacts with a surfactant, in the solution containing the ammonium molybdate. The nanostructure material supporting an arsenic ion adsorption compound such as ammonium molybdate can selectively adsorb and remove trace of arsenic ion in the solution by a room temperature treatment without a water conditioning such as pH control. In our removal system of arsenic, extra posttreatments are not needed because special pretreatments are not carried out, and special heating equipments are not used. Accordingly, our removal system of arsenic can be constructed at low cost. Furthermore, it can supply an arsenic-free solution by be constructed at multi stages.