Patents by Inventor Ho Bin

Ho Bin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210089549
    Abstract: Provided is a method of data storage, the method including identifying a plurality of transactions in a pending queue, the transactions having one or more key value updates respectively corresponding to a plurality of keys, identifying a commonly associated key of the plurality of keys associated with commonly associated key value updates of the key value updates belonging to different ones of the transactions, respectively assigning transaction group IDs to the transactions based on respective transaction IDs assigned to the transaction group IDs, grouping the transactions into a respective transaction group of a plurality of transaction groups based on the assigned transaction group ID, and merging conflicting data writes corresponding to the commonly associated key value updates of the commonly associated key for grouped transactions of the transactions that are in a same one of the transaction groups.
    Type: Application
    Filed: March 30, 2020
    Publication date: March 25, 2021
    Inventors: Heekwon Park, Ho bin Lee, Ilgu Hong, Yang Seok Ki
  • Publication number: 20210066341
    Abstract: The present technology includes a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first stack including a first hole, a second stack provided on the first stack and including a second hole connected to the first hole, a first memory film formed along an inner sidewall of the first hole, a second memory film formed along an inner sidewall of the second hole, and a channel film formed along an inner sidewall of the first memory film and an inner sidewall of the second memory film. The channel film is a single, continuous element.
    Type: Application
    Filed: March 5, 2020
    Publication date: March 4, 2021
    Inventors: Tae Hong GWON, Jin Ho BIN, Il Young KWON
  • Publication number: 20210028187
    Abstract: A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.
    Type: Application
    Filed: December 6, 2019
    Publication date: January 28, 2021
    Applicant: SK hynix Inc.
    Inventors: Hye-Hyeon BYEON, Sang-Deok KIM, Il-Young KWON, Tae-Hong GWON, Jin-Ho BIN
  • Publication number: 20210001121
    Abstract: Disclosed is a muscle stimulation system including: a muscle stimulation apparatus configured to determine a frequency corresponding to user's body information on the basis of the user's body information and determine an electrical stimulation waveform corresponding to the determined frequency; and a muscle stimulation pad which is connected to the muscle stimulation apparatus, is attached to the user's body, and includes at least one electrode configured to stimulate the user's body according to the determined electrical stimulation waveform. The muscle stimulation system may provide an electrical stimulation corresponding to the user's body information.
    Type: Application
    Filed: July 25, 2019
    Publication date: January 7, 2021
    Applicant: Ationlab Inc.
    Inventors: Ho Bin KIM, Wonseok CHOI
  • Publication number: 20200411552
    Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers, which are alternately stacked; an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
    Type: Application
    Filed: September 16, 2020
    Publication date: December 31, 2020
    Inventors: Jin Ho BIN, Il Young KWON, Il Do KIM
  • Patent number: 10879753
    Abstract: Disclosed is a BLDC motor, including: a stator which is provided with a plurality of teeth extending toward an inner side of a core and pole shoes each extending to be formed at radial inner end parts of the teeth; and rotors which are disposed at an inner side of the stator surrounded by the pole shoes while being spaced apart from the stator and have a plurality of permanent magnets coupled to cores thereof. Inner circumferential surfaces of the circumferential end parts of the pole shoe may be formed so that a distance of the inner circumferential surfaces of the circumferential end parts of the pole shoe from the outer circumferential surface of the rotor increases as the inner circumferential surfaces of the circumferential both end parts of the pole shoe is far away circumferentially from a central line CL of the pole shoe.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: December 29, 2020
    Assignee: Hanon Systems
    Inventors: Hyeon Jae Shin, Ho Bin Im, Kyung Hun Jung, Seong Kook Cho, Jae Kyoung Jin
  • Publication number: 20200388631
    Abstract: Disclosed is a memory device and a method for fabricating the same, and the method may include forming an alternating stack in which dielectric layers and sacrificial layers are alternately stacked over a substrate, each of the sacrificial layers being a combination of porous and non-porous materials, forming a vertical opening penetrating the alternating stack, converting exposed surfaces of the sacrificial layers located on a side wall of the vertical opening into blocking layers through an oxidation process, forming a vertical channel structure contacting the blocking layers in the vertical opening, and replacing non-converting portions of the sacrificial layers with conductive layers, wherein each of the conductive layers comprises a round-like edge contacting each of the blocking layers.
    Type: Application
    Filed: December 11, 2019
    Publication date: December 10, 2020
    Applicant: SK hynix Inc.
    Inventors: Jin-Ho BIN, Il-Young KWON, Tae-Hong GWON, Hye-Hyeon BYEON
  • Patent number: 10847533
    Abstract: A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: November 24, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Ki Hong Lee, Seung Ho Pyi, Il Young Kwon, Jin Ho Bin
  • Patent number: 10817366
    Abstract: Provided is a method of tracing a common cause failure in an integrated drawing. The method includes: synthesizing entities assigned attributes in at least one design drawing in units of a system where a common cause is to be traced; generating an integrated drawing with a hierarchical structure by horizontally or vertically interconnecting the entities assigned the same attribute in the at least one design drawing; and displaying a fault propagation path in the integrated drawing by using an internal tracer, wherein the displaying illustrates state information of the entities on the fault propagation path.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: October 27, 2020
    Assignee: KEPCO ENGINEERING & CONSTRUCTION COMPANY, INC.
    Inventors: Ho Bin Yim, Jae Young Huh, Gyu Cheon Lee
  • Patent number: 10817632
    Abstract: Provided is an integrated drawing producing method for common cause tracing. The integrated drawing producing method includes: distinguishing shapes of entities in at least one design drawing and assigning an attribute to each of distinguished entities; synthesizing the entities assigned the attributes in the at least one design drawing in units of a system where a common cause is to be traced; and generating an integrated drawing with a hierarchical structure by horizontally or vertically interconnecting the entities assigned the same attribute in the at least one design drawing.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: October 27, 2020
    Assignee: KEPCO ENGINEERING & CONSTRUCTION COMPANY, INC.
    Inventors: Ho Bin Yim, Jae Young Huh, Gyu Cheon Lee
  • Patent number: 10811429
    Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers, which are alternately stacked; an opening including a first opening penetrating the stack structure and second openings protruding from the first opening; and a channel layer including channel regions located in the second openings and impurity regions located in the first opening, the impurity regions having an impurity concentration higher than that of the channel regions.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: October 20, 2020
    Assignee: SK hynix Inc.
    Inventors: Jin Ho Bin, Il Young Kwon, Il Do Kim
  • Publication number: 20200295779
    Abstract: A transcoder is disclosed. The transcoder may comprise a buffer to store input encoded data. An index mapper may map an input dictionary to an output dictionary. A current encode buffer may store a modified current encoded data, which may be responsive to the input encoded data, the input dictionary, and the map from the input dictionary to the output dictionary. A previous encode buffer may store a modified previous encoded data, which may be responsive to the input encoded data, the input dictionary, and the map from the input dictionary to the output dictionary. A rule evaluator may generate an output stream responsive to the modified current encoded data in the current encode buffer, the modified previous encoded data in the previous encode buffer, and transcoding rules.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 17, 2020
    Inventors: Yang Seok KI, Ho Bin LEE
  • Publication number: 20200293192
    Abstract: A storage device is disclosed. The storage device may comprise storage for input encoded data. A controller may process read requests and write requests from a host computer on the data in the storage. An in-storage compute controller may receive a predicate from the host computer to be applied to the input encoded data. A transcoder may include an index mapper to map an input dictionary to an output dictionary, with one entry in the input dictionary mapped to an entry in the output dictionary, and another entry in the input dictionary mapped to a “don't care” entry in the output dictionary.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 17, 2020
    Inventors: Yang Seok KI, Ho Bin LEE
  • Patent number: 10749413
    Abstract: Provided is an inverter built-in BLDC motor including: an inverter housing having one side coupled to a motor, an inside formed to be hollow, and the other side formed to be open, and having a PCB substrate provided in the hollow portion; a bearing mounted in a bearing mounting portion of the inverter housing and having a rotating shaft of a rotor of the motor rotatably coupled thereto; and a bearing cover coupled to a bearing mounting groove of the bearing mounting portion mounted with the bearing and formed to close an opening portion of the bearing mounting groove on an inner bottom surface of the inverter housing.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: August 18, 2020
    Assignee: Hanon Systems
    Inventors: Ho Bin Im, Sang Hun Kim, Tae Wan Kim, Hee Kwon Park, Kyung Hun Jung, Seong Kook Cho
  • Publication number: 20200235113
    Abstract: A method for fabricating the three dimensional (3D), non-volatile memory (NVM) device includes: forming a stacked structure including a plurality of interlayer insulating layers and a plurality of first material layers which are alternately stacked; forming at least one channel hole penetrating through the stack structure; forming a second material layer along the at least one channel hole; trimming a surface of the second material layer; oxidizing a whole of the trimmed second material layer to form at least a portion of a charge blocking layer; and forming a charge storage layer and a tunnel insulating layer over the charge blocking layer.
    Type: Application
    Filed: August 26, 2019
    Publication date: July 23, 2020
    Inventors: Jin-Ho OH, Su-Hyun LEE, Tae-Hong GWON, Il-Young KWON, Jin-Ho BIN
  • Patent number: 10703858
    Abstract: A macromolecular photonic crystal material including an A block and a B block is disclosed. the A block comprises a crystalline polyhedral oligomeric POSS, the macromolecular photonic crystal material represented by the structural formula 1.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: July 7, 2020
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae Suk Lee, Chang Geun Chae, Mallela Yadagiri Lakshmi Narasimha Kishore, Myung Jin Kim, In Gyu Bak, Ho Bin Seo, Yong Guen Yu
  • Publication number: 20200126836
    Abstract: A substrate processing apparatus includes: a disk including a plurality of electrostatic chucks periodically disposed at a constant radius from a central axis; a disk support supporting the disk; a DC line electrically connected to the plurality of electrostatic chucks through the disk support; and a power supply configured to supply power to the DC line. The DC line includes: a first DC line penetrating through the disk support from the power supply; a power distribution unit configured to distribute the first DC line to connect the first DC line to each of the plurality of electrostatic chucks; and a plurality of second DC lines respectively connected to the plurality of electrostatic chucks in the power distribution unit.
    Type: Application
    Filed: June 8, 2018
    Publication date: April 23, 2020
    Inventors: Ho Bin YOON, Seung Chul SHIN, Jin Hyuk YOO
  • Patent number: 10610467
    Abstract: Disclosed are: a lightening composition comprising ginseng-derived exosome-like vesicles; and a method for producing the ginseng-derived exosome-like vesicles. The ginseng-derived exosome-like vesicles may have a diameter of between 20 and 500 nm, and may be isolated from ginseng root. Because the composition comprises the ginseng-derived exosome-like vesicles as an active ingredient, said composition is effective in preventing, improving or treating skin pigmentation conditions such as liver spots, freckles, lentigo, birth marks and melanoma by effectively suppressing the production of melanin.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: April 7, 2020
    Assignee: AMOREPACIFIC CORPORATION
    Inventors: Suh-Yeon Choi, Eun-Jeong Choi, Bum-Ho Bin, Kyeonghwan Hwang, Eun-Gyung Cho, Tae Ryong Lee
  • Publication number: 20200091806
    Abstract: The present invention relates to a brushless motor, and an objective of the present invention is to provide a brushless motor which can significantly reduce the cogging torque and torque ripple of the motor by minimizing the rate of change of magnetoresistance in accordance with a change in position of a rotor through the optimization of the shape design of the rotor and a stator, and can also reduce the weight of the brushless motor through the optimization of the shape design taking into consideration the materials of the rotor and the stator.
    Type: Application
    Filed: June 7, 2018
    Publication date: March 19, 2020
    Inventors: Hyeon Jae SHIN, Seong Kook CHO, Ho Youn KIM, Jae Won LEE, Ho Bin IM, Kyung Hun JUNG
  • Patent number: 10574120
    Abstract: Provided is an inverter built-in brushless direct current (BLDC) motor, in which an inverter housing and a cover are coupled to each other by having a connector block interposed therebetween, a sealing portion formed in the connector block seals between a circumference in a height direction and a length direction of the connector block and an inner side surface of the inverter housing and the cover, and a space between an electric wire penetrating through an electric wire through hole and the connector block, thereby simplifying parts for forming a watertight structure, easily sealing between the inverter unit and the connector block and sealing between the connector block and the electric wire, and reducing a package size including a connector block assembling part formed in the inverter unit and the connector block.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: February 25, 2020
    Assignee: Hanon Systems
    Inventors: Ho Bin Im, Sang Hun Kim, Tae Wan Kim, Hee Kwon Park, Kyung Hun Jung, Seong Kook Cho