Abstract: A variety of pad arrangements are provided for semiconductor devices for reducing the likelihood of bonding failures, particularly those due to shorts, and/or for reducing the difference in length between bonding wires to decrease signal skew during operation of the semiconductor device and improve signal integrity.

Abstract: A method of controlling a bank voltage (AIVC) through memory block selection information, said method comprising the steps of detecting an array block selection signal of an array block disposed distantly from an AIVC driver in response to an activated memory array block selection signal; and supplying a second bank voltage to a memory bank by driving a normal size driver and an oversize driver when detecting the array block selection signal for the distantly disposed array block.

Abstract: A tracking servo control apparatus and method in which the distance between a main beam and a side beam is adjustable by a rotatable grating, so as to perform a tracking servo control operation in accordance with a differential push-pull (DPP) method for both the DVD-ROM (Read Only Memory) and the DVD-RAM (Random Access Memory) having different track pitches.

Abstract: A semiconductor package includes multiple embedded chips, each chip including a common circuit having substantially the same common function. The common circuit in a selected one of the chips is enabled. The common circuit in one or more other ones of the chips is disabled. As a result, the enabled common circuit performs the common function for the selected chip and the one or more other chips.

Abstract: A semiconductor integrated circuit device includes a semiconductor chip having a memory cell array region surrounded with a peripheral circuit region and includes a plurality of bonding pads disposed at least in one row on only one side of the semiconductor chip. The circuit device may include first leads group disposed adjacent to the bonding pad side and a second leads group disposed opposite the first leads group. The second leads group may be formed over a portion of the semiconductor chip (lead-on-chip structure). A plurality of bonding wires connect the first and second leads group with the plurality of bonding pads respectively.

Abstract: An apparatus for and method of controlling AIVC through block selection information in a semiconductor memory device. The apparatus and method vary a block voltage supplied to an array block depending on a location of the array block in a memory bank.

Abstract: A compatible optical pickup device includes a single light source to emit a light having a wavelength longer than 650 nm, an objective lens having a near axis area, a ring type annular lens area, and a far axis area to focus the light to form light spots suitable for a first relatively thin optical disk and a second relatively thick optical disk to form a first light spot having an FWHM (full width at half maximum) of 0.72 &mgr;m or less for the first optical disk and a second light spot having an FWHM of 0.8 &mgr;m or more for the second optical disk, an optical path changer to change a proceeding path of incident light, and a photodetector to receive light reflected by the optical disk and having passed through the objective lens and the optical path changer and to detect an information signal and/or an error signal.

Abstract: A variety of pad arrangements are provided for semiconductor devices for reducing the likelihood of bonding failures, particularly those due to shorts, and/or for reducing the difference in length between bonding wires to decrease signal skew during operation of the semiconductor device and improve signal integrity.

Abstract: An optical pickup actuator performing the triaxial driving operation includes an objective lens through which a laser beam is focused on an optical disk, a blade mounted with tracking coils and focusing coils and a plurality of tilting magnets, a yoke plate having inside and outside yokes mounted with tracking and focusing magnets and also having a tilting yoke being spaced-apart from the inside and outside yokes, a plurality of suspension wires disposed on both sides of the blade to be electrically coupled to the tracking coils and focusing coils, a wire holder having a plurality of coupling elements through which each portion of the suspension wires passes, a yoke receptacle disposed between the coupling elements of the yoke plate to receive the tilting yoke, and a printed circuit board mounted on the holder to be electrically coupled to the suspension wires, and a tilting coil mounted on the wire holder and disposed in the yoke receptacle to generate an electromagnetic force.

Abstract: An auto-precharge control circuit in a semiconductor memory and method thereof, where the auto-precharge starting point may vary. The auto-precharge starting point may vary in response to at least one control signal. The auto-precharge starting point may vary in accordance with frequency and/or latency information. The auto-precharge starting point may vary in response to at least one control signal including clock frequency information. The auto-precharge starting point may vary depending on a latency signal received from a mode register setting command.

Abstract: An optical pickup device includes a light unit for irradiating a light beam having a wavelength longer than 650 nm onto a recording medium and receiving and detecting a light beam reflected by the recording medium, and an objective lens formed of a single lens having an NA of 0.7 or more to form a light spot on the recording medium by condensing an incident light beam emitted from the light unit. A recording medium has a recording density of a DVD family or more and formed of a material suitable for a long wavelength of 700 nm or more so that a reproduction signal by a reflectance of a recording surface is optimized. Thus, a compact high density optical recording/reproducing apparatus which is inexpensive and has high performance can be realized.

Abstract: An optical pickup including a many-sided reflection prism formed as a single body with a plurality of reflection faces to guide a light beam incident through a transmission face in a horizontal direction perpendicular to a height direction by reducing a size of the light beam in the height direction, by using a difference in angles between the reflection faces, and to reflect the guided light beam in the height direction by one reflection face of an angle less than 45° with respect to the horizontal direction. By using the many-sided reflection prism, the height of an optical system can be reduced regardless of the wavelength used without reducing light beam size. Thereby, slim-sized optical pickups can be implemented.

Abstract: A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU).

Abstract: A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU).

Abstract: A semiconductor memory device which includes a plurality of memory cell array blocks, each block including 2n partial blocks selectable in response to n address bits among a plurality of bits address. A partial block select signal generator is used for selecting ½n partial blocks of the 2n partial blocks in each of the plurality of memory cell array blocks by selecting the state of corresponding address bits among the n address bits. A method for repairing a semiconductor memory device which includes a plurality of memory cell array blocks and 2n partial blocks selected by the plurality of memory cell array blocks each responding to n address bits among a plurality of address bits, the method includes selecting only the ½n functional partial blocks of the 2n partial blocks in each of the plurality of memory cell array blocks by selecting the state of corresponding address bits among the n bits of address information.

Abstract: An optical reading and writing system including a base; an optical disk rotatably mounted on the base; an optical pickup including an objective lens, focusing a light beam to form a light spot on a recording surface of the optical disk; an actuator arm mounted on the base such that the actuator arm can pivot in the radial direction of the optical disk by a voice coil motor; a load beam supported by the actuator arm, and capable of moving slightly up and down and in the radial direction of the optical disk by an external force; a flexure attached to the load beam, supporting a slider to enable the slider to contact the recording surface; and a driving unit mounted on free ends of the actuator arm and the load beam, providing a driving force in the radial direction to the free end of the load beam.

Abstract: A synchronous dynamic random access memory capable of accessing data in a memory cell array therein in synchronism with a system clock from an external system such as a central processing unit (CPU).

Abstract: A semiconductor memory device having reduced sensing noise and sensing current by reducing the number of cells activated by a word line is provided. The semiconductor memory device includes a memory cell array, which is segmented into a plurality of memory cell groups in a column direction, and a plurality of sub-word line drivers for selectively activating the sub-word line of a corresponding memory cell group in response to a group selection signal. The semiconductor memory device prevents sensing operation from occurring in a memory cell group which is not selected, while sensing operation is performed in a memory cell group which is selected by the group selection signal.

Abstract: An integrated circuit device such as an integrated circuit memory device, includes a first fuse group such as a first laser fuse group including a plurality of first laser fuses each having a first narrow end, a second opposite end which is wider and a bent central portion. Pitches of the first end of the plurality of first laser fuses are narrow and pitches of the second end are wide. The plurality of first laser fuses are adjacent one another. A second fuse group such as a second laser fuse group includes a plurality of second laser fuses each having a first wide end, a second opposite end which is narrower, and a bent central portion. Pitches of the first end of the plurality of second laser fuses are wide and pitches of the second end are narrow. The second plurality of laser fuses are adjacent one another. The first ends of the laser fuses in the first laser fuse group are adjacent the first ends of laser fuses in the second laser fuse group.

Abstract: Graphics memory devices include an output register having an input electrically coupled to an output signal line (DO) and first and second data output buffers responsive to first and second clock signals (CLK1, CLK2), respectively. The first data output buffer has an input electrically coupled to the output signal line (DO) and the second data output buffer has an input electrically coupled to an output of the output register. These memory devices also include at least one memory cell array and a read data driver that has an input electrically coupled to the memory cell array by an input/output signal line (I/O) and an output electrically coupled to the output signal line (DO). To provide improved performance for graphics processing applications, a clock signal generator is provided that generates the first and second clock signals at different frequencies and/or different phases relative to each other.