Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.

Abstract: The present invention relates to a metal (hydr)oxide composite comprising a poorly soluble drug, a method for preparing same, and a pharmaceutical composition comprising same.

Abstract: Disclosed are semiconductor devices and methods of fabricating the same. The semiconductor device includes a plurality of gate structures that are spaced apart from each other in a first direction on a substrate and extend in a second direction intersecting the first direction, and a plurality of separation patterns penetrating immediately neighboring ones of the plurality of gate structures, respectively. Each of the plurality of separation patterns separates a corresponding one of the neighboring gate structures into a pair of gate structures that are spaced apart from each other in the second direction. The plurality of separation patterns are spaced apart from and aligned with each other along the first direction.

Abstract: The present invention relates to a mutated non-toxic protease in which the amino acid cysteine (Cys) at position 430 of a non-toxic protease represented by the amino acid sequence of SEQ ID NO: 1 is substituted with an amino acid other than cysteine. According to the present invention, it is possible to recover a refolded non-toxic protease from an insoluble fraction from which the non-toxic protease was almost impossible to recover in the prior art, and thus it is possible to produce the non-toxic protease with significantly improved productivity.

Abstract: A vehicle includes a sensor unit configured to acquire positional information of at least one object located in the vicinity of the vehicle, the sensor unit comprising a plurality of sensor modules. A controller is configured to determine a tracking filter based on a correspondence relationship between the plurality of sensor modules and the at least one object and to track the position of the at least one object using the positional information of the at least one object and the tracking filter.

Abstract: The present invention relates to a metal phase transformation compound and a method for preparing the same.

Abstract: An autonomous driving control apparatus may include a processor configured to determine a wear degree of a tire of a vehicle based on image data of the tire during autonomous driving of the vehicle, and to perform vehicle control depending on the wear degree of the tire; and a storage electrically connected to the processor and configured to store the image data and algorithms driven by the processor.

Abstract: A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.

Abstract: Provided is a vehicle capable of efficient storage medium management by differentially storing images acquired by the vehicle on the basis of a surrounding environment of the vehicle and a vehicle state, and a control method thereof. The vehicle includes a storage, a camera configured to acquire a vehicle surrounding image of a vehicle, a sensor unit configured to acquired vehicle information of the vehicle, and a control unit configured to determine an accident occurrence probability of an accident occurring to the vehicle on the basis of at least one of the vehicle surrounding image and the vehicle information, and in response to determining that a collision has occurred to the vehicle on the basis of the vehicle information, determine a storage form of the vehicle surrounding image on the basis of the accident occurrence probability and store the vehicle surrounding image in the storage.

Abstract: The present invention relates to a metal phase transformation compound and a method for preparing the same.

Abstract: A vehicle includes a first image obtainer configured to obtain an external image; a second image obtainer configured to obtain an internal image; an obstacle detector configured to detect obstacles; a controller configured to control autonomous driving based on obstacle detection information detected by the obstacle detector and image data obtained by the first image obtainer and encrypt brightness data among the image data obtained by the first and second image obtainers during the control of the autonomous driving; and a storage configured to store the encrypted brightness data.

Abstract: The present invention relates to a metal layered hydroxide complex and a method of preparing the metal layered hydroxide complex.

Abstract: The present disclosure relates to a method for preparing an aramid nanofiber dispersion. More specifically, the present invention relates to a method for preparing aramid nanofibers in a short time from aromatic polyamide-based polymers other than fibers, and to aramid nanofibers prepared therefrom.

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.

Abstract: A vehicle providing safe autonomous driving by predicting driving of surrounding vehicles based on a relationship between surrounding vehicles is provided. The vehicle includes a sensing device that obtains position information of a first vehicle and a second vehicle and a driver. A controller determines a mutual positional relationship between the second vehicle and the first vehicle based on the position information and determines an expected driving path of the first vehicle based on a relative speed of the first vehicle and the second vehicle and the mutual positional relationship. The driver is operated to maintain a collision avoidance or a safe distance from the first vehicle based on the expected driving path.

Abstract: A vehicle is capable of efficient autonomous driving by changing the detection range and power consumption of a sensor according to the speed of the vehicle. The vehicle includes: an information acquirer configured to acquire vehicle surround information; a speed sensor configured to acquire vehicle speed; and a controller configured to determine a vehicle stopping distance based on the vehicle speed and to determine a detection area for acquiring the vehicle surround information by the information acquirer based on the stopping distance and a risk level for each sensor channel The detection area includes the stopping distance relative to the vehicle.

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.