Patents by Inventor Ho Jun Kim
Ho Jun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10818802Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: GrantFiled: March 23, 2018Date of Patent: October 27, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Ho Lee, Ho Jun Kim, Sung Dae Suk, Geum Jong Bae
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Publication number: 20200201349Abstract: A vehicle includes a first image obtainer configured to obtain an external image; a second image obtainer configured to obtain an internal image; an obstacle detector configured to detect obstacles; a controller configured to control autonomous driving based on obstacle detection information detected by the obstacle detector and image data obtained by the first image obtainer and encrypt brightness data among the image data obtained by the first and second image obtainers during the control of the autonomous driving; and a storage configured to store the encrypted brightness data.Type: ApplicationFiled: May 29, 2019Publication date: June 25, 2020Inventors: Changwoo Ha, Bong Ju Kim, Ho-Jun Kim, Hochoul Jung
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Publication number: 20200193182Abstract: A vehicle includes a sensor unit configured to acquire positional information of at least one object located in the vicinity of the vehicle, the sensor unit comprising a plurality of sensor modules. A controller is configured to determine a tracking filter based on a correspondence relationship between the plurality of sensor modules and the at least one object and to track the position of the at least one object using the positional information of the at least one object and the tracking filter.Type: ApplicationFiled: September 20, 2019Publication date: June 18, 2020Inventors: Bong Ju Kim, Byung-Jik Keum, Ho-Jun Kim, Sungsuk Ok
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Publication number: 20200191950Abstract: Provided is a vehicle capable of efficient storage medium management by differentially storing images acquired by the vehicle on the basis of a surrounding environment of the vehicle and a vehicle state, and a control method thereof. The vehicle includes a storage, a camera configured to acquire a vehicle surrounding image of a vehicle, a sensor unit configured to acquired vehicle information of the vehicle, and a control unit configured to determine an accident occurrence probability of an accident occurring to the vehicle on the basis of at least one of the vehicle surrounding image and the vehicle information, and in response to determining that a collision has occurred to the vehicle on the basis of the vehicle information, determine a storage form of the vehicle surrounding image on the basis of the accident occurrence probability and store the vehicle surrounding image in the storage.Type: ApplicationFiled: July 17, 2019Publication date: June 18, 2020Inventors: Ho-Jun Kim, Changwoo Ha, Byung-Jik Keum, Jun-Muk Lee, Joo-Hee Choi, JinHa Choi
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Publication number: 20200075331Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.Type: ApplicationFiled: March 22, 2019Publication date: March 5, 2020Inventors: Chang-woo NOH, Myung-gil KANG, Ho-jun KIM, Geum-jong BAE, Dong-il BAE
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Publication number: 20200035705Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.Type: ApplicationFiled: March 7, 2019Publication date: January 30, 2020Inventors: Ho-Jun Kim, Jaehyeoung Ma, Geumjong Bae
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Patent number: 10128346Abstract: A semiconductor device includes a semiconductor pattern on a substrate along a first direction, a blocking pattern on a top surface of the semiconductor pattern, a first wire pattern on the blocking pattern along a second direction different from the first direction, the first wire including a first part and a second part on opposite sides of the first part, a gate electrode surrounding the first part of the first wire pattern, and a contact surrounding the second part of the first wire pattern, wherein a height of a bottom surface of the contact from a top surface of the substrate is different from a height of a bottom surface of the gate electrode from the top surface of the substrate.Type: GrantFiled: May 26, 2016Date of Patent: November 13, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-Jun Kim, Sung-Dae Suk
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Patent number: 10056454Abstract: A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.Type: GrantFiled: October 27, 2016Date of Patent: August 21, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-Jun Kim, Jong-Ho Lee, Geum-Jong Bae, Dong-Chan Suh
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Publication number: 20180212067Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: ApplicationFiled: March 23, 2018Publication date: July 26, 2018Applicant: Samsung Electronics Co, LtdInventors: Jong Ho LEE, Ho Jun Kim, Sung Dae Suk, Geum Jong Bae
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Patent number: 9985141Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: GrantFiled: August 2, 2017Date of Patent: May 29, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Ho Lee, Ho Jun Kim, Sung Dae Suk, Geum Jong Bae
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Patent number: 9871103Abstract: A semiconductor device includes a plurality of active regions including channel regions extending in a first direction on a semiconductor substrate and source/drain regions connected to the channel regions, a plurality of gate electrodes extending in a second direction different from the first direction to intersect the channel regions, a plurality of conductive lines electrically connected to at least one of the source/drain regions and the plurality of gate electrodes through a plurality of vias, and a power line disposed between the semiconductor substrate and the plurality of conductive lines and configured to supply a power supply voltage.Type: GrantFiled: March 31, 2016Date of Patent: January 16, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Ho Jun Kim, Sung Dae Suk
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Patent number: 9860659Abstract: An electronic device comprising: a memory; a headphone jack; and at least one processor operatively coupled to the memory, configured to: detect an impedance of a first portion of the headphone jack; and detect whether a foreign substance is present in the headphone jack based on the impedance of the first portion of the headphone jack.Type: GrantFiled: November 30, 2015Date of Patent: January 2, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Hee Won, Ho-Jun Kim, Kyung-Min Park, Gi-Hoon Lee, Sung-Bin Hong
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Publication number: 20170345946Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: ApplicationFiled: August 2, 2017Publication date: November 30, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jong Ho LEE, Ho Jun KIM, Sung Dae SUK, Geum Jong BAE
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Patent number: 9825183Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: GrantFiled: July 28, 2016Date of Patent: November 21, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Ho Lee, Ho Jun Kim, Sung Dae Suk, Geum Jong Bae
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Patent number: 9791855Abstract: A semiconductor process management system is provided. The semiconductor process management system includes a communicator that receives a process recipe from one or more process apparatuses and receives a measured value for each sampling point from one or more measuring apparatus, and a first determination unit that establishes a mutual influence model between the process recipe and the measured value for each sampling point based on the process recipe and the measured value for each sampling point.Type: GrantFiled: May 21, 2015Date of Patent: October 17, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-hoon Han, Jai-hyung Won, Do-hyung Kim, Sung-hyup Kim, Ho-jun Kim
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Publication number: 20170256611Abstract: A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first nano sheets which extend in the first direction parallel to an upper surface of the first fin. A second fin extends in the first direction. A second nano sheet structure includes at least two second nano sheets which extend in the first direction parallel to an upper surface of the second fin. At least one of the at least two first nano sheets has a different thickness from at least one of the at least two second nano sheets.Type: ApplicationFiled: October 27, 2016Publication date: September 7, 2017Inventors: HO-JUN KIM, Jong-ho Lee, Geum-Jong Bae, Dong-Chan Suh
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Publication number: 20170250291Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.Type: ApplicationFiled: July 28, 2016Publication date: August 31, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jong Ho LEE, Ho Jun KIM, Sung Dae SUK, Geum Jong BAE
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Patent number: 9749809Abstract: The present invention relates to a method and system for determining location and position for the effective use thereof in a location-based service by precisely determining information on the location and position of a user terminal, such as a smartphone, to provide the determined location and position to the user terminal using a georeferenced reference image DB preconstructed on a server on a network or on the user terminal, and images captured by a camera of the user terminal.Type: GrantFiled: November 14, 2012Date of Patent: August 29, 2017Assignee: University of Seoul Industry Cooperation FoundationInventors: Im Pyeong Lee, Kyoung Ah Choi, Ho Jun Kim
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Publication number: 20170092730Abstract: A semiconductor device includes a semiconductor pattern on a substrate along a first direction, a blocking pattern on a top surface of the semiconductor pattern, a first wire pattern on the blocking pattern along a second direction different from the first direction, the first wire including a first part and a second part on opposite sides of the first part, a gate electrode surrounding the first part of the first wire pattern, and a contact surrounding the second part of the first wire pattern, wherein a height of a bottom surface of the contact from a top surface of the substrate is different from a height of a bottom surface of the gate electrode from the top surface of the substrate.Type: ApplicationFiled: May 26, 2016Publication date: March 30, 2017Inventors: Ho-Jun KIM, Sung-Dae SUK
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Publication number: 20170033102Abstract: A semiconductor device includes a plurality of active regions including channel regions extending in a first direction on a semiconductor substrate and source/drain regions connected to the channel regions, a plurality of gate electrodes extending in a second direction different from the first direction to intersect the channel regions, a plurality of conductive lines electrically connected to at least one of the source/drain regions and the plurality of gate electrodes through a plurality of vias, and a power line disposed between the semiconductor substrate and the plurality of conductive lines and configured to supply a power supply voltage.Type: ApplicationFiled: March 31, 2016Publication date: February 2, 2017Inventors: Ho Jun Kim, Sung Dae Suk