Abstract: Proposed are a multilingual subtitle service system and a method for controlling a service server thereof. The subtitle service system includes: a subtitle service server configured to, in response to a request from a worker, provide a subtitle content creating tool for creating a subtitle content for a content image requested by a client and evaluate task performance of the worker based on the subtitle content created by the worker; and a user terminal device configured to access the subtitle service server to transmit project information on the content image requested by the client, and, in response to a request from the worker, display a subtitle service window including the subtitle content creating tool provided by the subtitle service server.

Abstract: A display device comprises first scan line and a second scan line that extend in a first direction, a third scan line extending in a second direction intersecting the first direction, the third scan line intersecting the first scan line and the second scan line, and an insulating layer including a scan contact hole disposed between the first scan line and the third scan line, and a recess pattern disposed between the second scan line and the third scan line. The scan contact hole passes through the insulating layer in. The first scan line and the third scan line are in electrical contact with each other by the scan contact hole. The recess pattern includes a shape recessed from an upper surface to a lower surface of the insulating layer. The second scan line and the third scan line are electrically insulated from each other.

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

Abstract: A display device includes a first pixel disposed in a display area, wherein the first pixel includes first and second electrodes disposed in the display area and spaced apart from each other; a first light emitting element group including light emitting elements disposed between the first electrode and the second electrode; a first contact electrode disposed on the first electrode and connected to the light emitting elements; a second contact electrode disposed on the second electrode and connected to the light emitting elements; a first electrode contact portion disposed on the first electrode and connected to the first electrode; a second electrode contact portion disposed on the second electrode and connected to the second electrode; a first repair pattern connecting the second contact electrode and the first electrode contact portion; and a second repair pattern connecting the first contact electrode and the second electrode contact portion.

Abstract: A battery module includes: a battery cell stack including a plurality of battery cells stacked on each other in a first direction; a pair of cell covers which is in surface contact with both side surfaces of the battery cell stack; a housing which covers side surfaces of the pair of cell covers in the first direction and top surfaces of the battery cell stack. In particular, a bottom side of the housing is open.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: A display device includes: a substrate; a first bank including a first sub-bank and a second sub-bank spaced apart from each other on the substrate; a first electrode on the first sub-bank; a second electrode on the second sub-bank and spaced apart from the first electrode; and a light-emitting element between the first sub-bank and the second sub-bank. Each of the first and second sub-banks has a first area having a concave curved shape in a cross section and being adjacent to the light-emitting element. The first electrode has a first section extending beyond the first sub-bank toward the light-emitting element, the second electrode has a first section extending beyond the second sub-bank toward the light-emitting element, and a width of the first section of the first electrode is different from a width of the first section of the second electrode.

Abstract: A mounting structure for a battery pack is provided. The mounting structure includes a battery pack having a plurality of battery modules, a carrier, which is positioned at the battery pack to be partitioned and to allow the battery modules to be mounted therein. A seating portion is formed in a vehicle body to define a pace for accommodating the battery pack therein. A lower cover is positioned on a lower surface of the battery pack, and a heat sink is coupled to the carrier to face lateral side surfaces of the battery modules and to define a flow path through which cooling water flows.

Abstract: A system for providing a speed profile of a self-driving vehicle includes a vehicle driving information prediction device, and a speed profile generation device, wherein the vehicle driving prediction device includes a navigation unit configured to set information on a drive route and a target travel time, a 3D map information provision unit configured to search for gradient information of the drive route set by the navigation unit, and a vehicle driving information provision unit, and wherein the speed profile generation device includes a vehicle energy consumption calculation unit configured to calculate energy consumption at a current speed of the vehicle when the vehicle runs along the set drive route, and a speed profile calculation unit configured to calculate a distance-based target speed profile by executing a dynamic programming algorithm.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

Abstract: An apparatus for indicating an expected speed of a vehicle includes an information provider configured to provide vehicle driving information and deceleration event information required to determine the expected speed of the vehicle at a deceleration event point while the vehicle travels, a controller configured to detect a deceleration event on a travel path based on the vehicle driving information and the deceleration event information provided by the information provider and to determine the expected speed of the vehicle at the detected deceleration event point, and a display unit configured to receive a signal indicating the expected speed of the vehicle at the deceleration event point and the deceleration event information from the controller and to display the received expected speed of the vehicle in a predetermined form of an augmented reality (AR) image and a position of the deceleration event on an information display screen.

Abstract: Forming a semiconductor device includes forming a first conductive line on a substrate, forming a memory cell including a switching device and a data storage element on the first conductive line, and forming a second conductive line on the memory cell. Forming the switching device includes forming a first semiconductor layer, forming a first doped region by injecting a n-type impurity into the first semiconductor layer, forming a second semiconductor layer thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region, forming a second doped region by injecting a p-type impurity into an upper region of the second semiconductor layer, and forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a P-N junction of the P-N diode in the second semiconductor layer.

Abstract: An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Abstract: Provided is a single pole double through (SPDT) switch including a series switching unit including first and second series switching elements commonly connected to a common input port, and a shunt switching unit including a plurality of shunt switching elements connected in parallel to a first signal path connecting the common input port to a first output port and a second signal path connecting the common input port to a second output port, wherein first and second inductors are respectively connected to gate terminals of the first and second series switching elements.

Abstract: A stop range indication device and a stop range indication method for a vehicle are proposed. The device and the method calculate an estimated stop range of a host vehicle using a variety of pieces of information during deceleration traveling of the host vehicle and provide visual guidance to a driver by displaying a stop range ahead of the host vehicle in accordance to the result of the calculation, thereby enabling the driver to drive safely while recognizing the stop range ahead of the host vehicle.