Abstract: An output data strobe signal generating method and a memory system that includes a plurality of semiconductor memory devices, and a memory controller for controlling the semiconductor memory devices, wherein the memory controller provides a command signal and a chip selecting signal to the semiconductor memory devices. One or more of the semiconductor memory devices may detect a read command and a dummy read command in response to the command signal and the chip selecting signal and generate one or more preamble signals based on a calculated preamble cycle number.

Abstract: In one embodiment, a latency circuit generates the latency signal based on CAS latency information and read information. For example, the latency circuit may include a clock signal generating circuit generating a plurality of transfer signals and generating a plurality of sampling clock signals based on and corresponding to the plurality of transfer signals such that a timing relationship is created between the transfer signals and the sampling clock signals. The latency circuit may further include a latency signal generator selectively storing the read information based on the sampling clock signals, and selectively outputting the stored read information as the latency signal based on the transfer signals. The latency signal generator may also delay the read information such that the delayed, read information is stored based on the sampling clock signals.

Abstract: We describe an input buffer having a stabilized operating point and an associated method. An input buffer may include a first differential amplifying unit to generate a first output signal having a first operating point and a second differential amplifying unit to generate a second output signal having a second operating point. An output control circuit varies respective weights of the first and second output signals responsive to an output control signal. The first differential amplifying unit may operate responsive to a reference voltage and an input voltage signal. The second differential amplifying unit may operate responsive to the reference voltage and the input voltage signal. The first operating point may be relatively higher than the second operating point.

Abstract: For data training in a memory device, a selecting unit selects a subset of data bit patterns received from a controlling device. In addition, a storing unit comprised of memory cells of the memory device stores the selected subset of data bit patterns. Such stored data bit patterns are then sent back to the controlling device that determines the level of data skew. Such data training more accurately reflects the actual paths and environments of the transmitted data bits.

Abstract: The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates at least one transfer signal with at least one sampling signal based on CAS latency information to create a desired timing relationship between the associated sampling and transfer signals. The latency circuit stores read information in accordance with at least one of the sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.

Abstract: Disclosed is a delay locked-loop circuit comprising a phase detector for detecting a phase difference between an external clock signal and an internal clock signal, a delay unit controller for generating a control signal in response to output of the phase detector, and a variable delay unit for delaying the external clock in response to the control signal to synchronize the internal clock with the external clock, the variable delay unit comprising a first group of delay cells used at or above a predetermined frequency, a second group of delay cells used with the first group of delay cells at or below a predetermined frequency, switch transistors for connecting/disconnecting the first group of delay cells and the second group of delay cells to/from a first output line and a second output line of the variable delay unit, respectively, in response to the control signal, and a switch for connecting/disconnecting the first output line to/from the second output line in response to a delay use signal representing th

Abstract: The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates at least one transfer signal with at least one sampling signal based on CAS latency information to create a desired timing relationship between the associated sampling and transfer signals. The latency circuit stores read information in accordance with at least one of the sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.

Abstract: An input signal provided to an input terminal is terminated by coupling the input terminal to a ground voltage through a pull down transistor if the input signal at the input terminal is at a “high” level and coupling the input terminal to a power voltage through a pull up transistor if the input signal at the input terminal is at a “low” level. Termination circuits are provided including on die termination circuits.

Abstract: A semiconductor integrated circuit device which includes a termination circuit for terminating a bus line. An impedance control circuit controls impedance of the termination circuit in accordance with impedance of an external reference resistor, so as to have the same or substantially the same impedance as that of the external reference resistor. A detection circuit detects whether the external reference resistor is electrically connected to the semiconductor integrated circuit, and disables the impedance control circuit based on a detection result.

Abstract: Provided are an on-chip termination apparatus in a semiconductor integrated circuit, and a method for controlling the same. The on-chip termination apparatus is installed in a semiconductor integrated circuit that has an output driver for outputting data to the outside via a pad and a data input circuit for receiving data from the outside via the pad. The on-chip termination apparatus includes an on-chip terminator including at least one terminal resistor electrically connected to the pad; and a terminator control circuit for turning on or off the on-chip terminator in response to an output enable signal that enables or disables the data output circuit, wherein the terminator control circuit turns off the on-chip terminator in the event that the data output circuit is enabled. Therefore, the on-chip termination apparatus is controlled by an output enable signal, thereby reducing timing loss, thus enabling a system to operate at high speed.

Abstract: A termination circuit for a transmission line may include an input node, a pull-down circuit, and a pull-up circuit. The input node receives an input signal over the transmission line. The pull-down circuit is coupled between the input node and a first reference voltage, and the pull-down circuit may be configured to provide an electrical path between the first reference voltage and the input node responsive to the input signal having a first voltage level. The pull-up circuit is coupled between the input node and a second reference voltage, and the pull-up circuit is configured to provide an electrical path between the second reference voltage and the input node responsive to the input signal having a second voltage level. More particularly, the first reference voltage is less than the second reference voltage, and the first voltage level is greater than the second voltage level. Related methods are also discussed.

Abstract: A circuit and method for calibrating an active termination resistor irrespective of changes in process, voltage, or temperature is provided. The method includes the steps of (a) calibrating a first variable resistor to have the same resistance as that of an external resistor; (b) at the same time calibrating a second variable resistor to have the same resistance as that of the first variable resistor; and (c) calibrating the active termination resistor to have the same resistance as that of the external resistor. The step of calibrating the first variable resistor to have the same resistance as that of the external resistor is in response to a first control code, and at the same time the step of calibrating the second variable resistor to have the same resistance as that of the first variable resistor is in response to a second control code.

Abstract: A memory device includes a data line and a variable delay precharge circuit that receives a column bank address signal and a write enable signal and that precharges the data line responsive to the column bank address signal at a time that is determined by a state of the write enable signal. For example, the variable delay precharge circuit may include a precharge circuit operative to precharge the data line responsive to a precharge control signal, and a variable delay precharge control signal generator circuit that receives the column bank address signal and the write enable signal and that delays the precharge control signal with respect to the column bank address signal responsive to the write enable signal.

Abstract: Described is a receiver circuit reducing kick -back noises, due to coupling capacitance from a pair of differential input transistors when a system clock is rising up to a high level, by connecting drain nodes of the differential input transistors, which respond to a reference voltage and a data signal, respectively, while the system clock is at a low level, to a ground voltage.

Abstract: A data input circuit for use in a semiconductor device, the data input circuit reducing a load difference between a fetch signal and a plurality of groups of data. The data input circuit includes first through Nth latching units for latching each one of N groups of data in response to a reference clock, respectively (N is a natural number greater than 2), and a bus for transmitting the reference clock and the N groups of data to the first through Nth latching units. Each of the first through Nth latching units includes a clock buffer for buffering the reference clock; a data buffer for buffering a corresponding group of data of the N groups of data; N−1 dummy elements for respectively receiving each one of the N groups of data, except for the group of data input to the data buffer; and latches for latching data output from the data buffer in synchronization with a signal output from the clock buffer.

Abstract: The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates at least one transfer signal with at least one sampling signal based on CAS latency information to create a desired timing relationship between the associated sampling and transfer signals. The latency circuit stores read information in accordance with at least one of the sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.

Abstract: The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates a plurality of transfer signals with a plurality of sampling signals based on a CAS latency to create a desired timing relationship between each sampling signal and the associated transfer signal. The latency circuit stores read information in accordance with at least one of the plurality of sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.

Abstract: The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates a plurality of transfer signals with a plurality of sampling signals based on a CAS latency to create a desired timing relationship between each sampling signal and the associated transfer signal. The latency circuit stores read information in accordance with at least one of the plurality of sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.

Abstract: A semiconductor integrated circuit device which includes a termination circuit for terminating a bus line. An impedance control circuit controls impedance of the termination circuit in accordance with impedance of an external reference resistor, so as to have the same or substantially the same impedance as that of the external reference resistor. A detection circuit detects whether the external reference resistor is electrically connected to the semiconductor integrated circuit, and disables the impedance control circuit based on a detection result.

Abstract: Provided are an on-chip termination apparatus in a semiconductor integrated circuit, and a method for controlling the same. The on-chip termination apparatus is installed in a semiconductor integrated circuit that has an output driver for outputting data to the outside via a pad and a data input circuit for receiving data from the outside via the pad. The on-chip termination apparatus includes an on-chip terminator including at least one terminal resistor electrically connected to the pad; and a terminator control circuit for turning on or off the on-chip terminator in response to an output enable signal that enables or disables the data output circuit, wherein the terminator control circuit turns off the on-chip terminator in the event that the data output circuit is enabled. Therefore, the on-chip termination apparatus is controlled by an output enable signal, thereby reducing timing loss, thus enabling a system to operate at high speed.