Patents by Inventor Holger Jurgensen

Holger Jurgensen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7524532
    Abstract: A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: April 28, 2009
    Assignee: Aixtron AG
    Inventors: Holger Jurgensen, Gerhard Karl Strauch
  • Patent number: 7473316
    Abstract: What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.
    Type: Grant
    Filed: July 24, 2000
    Date of Patent: January 6, 2009
    Assignee: Aixtron AG
    Inventors: Bernd Schottker, Michael Heuken, Holger Jürgensen, Gerd Strauch, Bernd Wachtendorf
  • Patent number: 7332038
    Abstract: A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: February 19, 2008
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Gerhard Karl Strauch, Johannes Käppeler
  • Patent number: 7201942
    Abstract: A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.
    Type: Grant
    Filed: August 9, 2002
    Date of Patent: April 10, 2007
    Assignee: Aixtron AG
    Inventors: Holger Jurgensen, Johannes Kappeler, Gerd Strauch, Dietmar Schmitz
  • Patent number: 7147718
    Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: December 12, 2006
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Gerhard Karl Strauch, Johannes Käppeler
  • Patent number: 7135073
    Abstract: What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: November 14, 2006
    Assignee: Aixtron AG
    Inventors: Michael Heuken, Gert Strauch, Harry Protzmann, Holger Jürgensen, Oliver Schön, Dietmar Schmitz
  • Patent number: 7128786
    Abstract: This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer layer, is deposited on the substrate or on a III-V germination layer, in a process chamber of a reactor containing gaseous starting materials. In order to reduce the defect density of the overgrowth, a masking layer consisting of essentially amorphous material is deposited directly on the III-V germination layer or directly on the substrate, said masking layer partially covering of approximately partially covering the germination layer. The masking layer can be a quasi-monolayer and can consist of various materials.
    Type: Grant
    Filed: June 21, 2004
    Date of Patent: October 31, 2006
    Assignee: Aixtron AG
    Inventors: Holger Jurgensen, Alois Krost, Armin Dadgar
  • Publication number: 20060201427
    Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.
    Type: Application
    Filed: May 9, 2006
    Publication date: September 14, 2006
    Inventors: Holger Jurgensen, Johannes Kappeler, Gerhard Strauch
  • Patent number: 7078318
    Abstract: The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.
    Type: Grant
    Filed: June 21, 2004
    Date of Patent: July 18, 2006
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Alois Krost, Armin Dadgar
  • Patent number: 7067012
    Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: June 27, 2006
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Johannes Käppeler, Gerhard Karl Strauch
  • Patent number: 7056388
    Abstract: A reaction chamber for carrying out substrate coating methods is disclosed, having at least one opening in at least one outer wall in which an HF feedthrough is inserted in a pressure or vacuum tight manner. The reaction chamber is further characterized by a combination of the following features: a support plate with coolant channels, and at least one opening for an HF line; an HF line collar in the zone disposed in the reaction chamber, a first seal on the collar; a first disc from an insulating material between a second seal on the support plate and the first seal on the collar; a thread in the zone outside the reaction chamber, a screw element being screwed onto the thread, all configured to prevent an electrical contact between the HF line and the support plate being established or an arc-over between the HF line and the support plate occurring.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: June 6, 2006
    Assignee: Aixtron AG
    Inventors: Walter Franken, Gerd Strauch, Johannes Kappeler, Holger Jurgensen
  • Patent number: 7033921
    Abstract: The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means of a gas inlet organ, said substances accumulating, optionally after a chemical gas phase and/or surface reaction, on the surface of a semiconductor substrate that is placed on a substrate holder in the process chamber, thus forming the semiconductor layer. Said semiconductor layer and the semiconductor substrate form a crystal consisting of either one or several elements from main group V, elements from main groups III and V, or elements from main groups II and VI.
    Type: Grant
    Filed: June 21, 2004
    Date of Patent: April 25, 2006
    Assignee: Aixtron AG
    Inventor: Holger Jurgensen
  • Patent number: 6962624
    Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: November 8, 2005
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Gerhard Karl Strauch, Markus Schwambera
  • Patent number: 6905548
    Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: June 14, 2005
    Assignee: Aixtron AG
    Inventors: Holger Jürgensen, Gerhard Karl Strauch, Johannes Käppeler
  • Publication number: 20050109281
    Abstract: The invention relates to a method and a device for coating at least one substrate with a thin layer in a processing chamber of a reactor. A solid or liquid starting material stored at least in a reservoir is guided into the processing chamber as a gas or an aerosol by means of a carrier gas, where it is condensed on the substrate. The solid or liquid starting material is maintained at a source temperature which is higher than the substrate temperature. In order to enable a targeted adjustment of the composition, sequence of layers and properties of the contact surface which determine the properties of the components, the carrier gas flows through the starting material and the supply of the gaseous starting material to the processing chamber is controlled by means of at least one valve and one mass flow regulator.
    Type: Application
    Filed: September 22, 2004
    Publication date: May 26, 2005
    Inventors: Holger Jurgensen, Michael Heuken
  • Publication number: 20050106864
    Abstract: The invention relates to a device for carrying out a method wherein the process gases are introduced via a common gas inlet element (D) into the process chamber in which a substrate holder (S) is arranged. The gas inlet element has a gas outlet surface which is tempered and which possesses a plurality of gas outlets like a sieve. The substrate holder extends parallel to the gas outlet surface on a horizontal plane and is rotationally driven about a vertical axis. The distance between the substrate holder and the gas outlet surface is not greater than 75 mm. A gas supply device for the reactive gases consisting of at least one metal-organic compound and at least one hydride in addition to another gas is also provided. The isotherms extending above the substrate holder become increasingly flatter as the distance from the gas inlet element becomes smaller, thereby resulting in a higher degree of isothermic homogeneity.
    Type: Application
    Filed: August 20, 2004
    Publication date: May 19, 2005
    Inventors: Holger Jurgensen, Gerhard Strauch
  • Publication number: 20050106319
    Abstract: The invention relates to a method and a device for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of said process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of said chamber consisting of a gas inlet element. Said cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through said gas exit surface. The invention is characterized in that the height of the process chamber which is defined by the distance between the substrate bearing surface and the gas exit surface is varied before the beginning of the deposition process and/or during the deposition process.
    Type: Application
    Filed: October 18, 2004
    Publication date: May 19, 2005
    Inventors: Holger Jurgensen, Gerhard Strauch
  • Publication number: 20050081788
    Abstract: The invention relates to a device for depositing thin layers on a substrate, comprising a process chamber arranged in a reactor housing, the bottom of said process chamber being formed by a susceptor for receiving at least one substrate and a gas inlet organ being assigned to the lid of said process chamber, wherein the process gas can be introduced into the process chamber by means of a gas outlet surface which is substantially evenly distributed on the surface thereof and which points towards the susceptor. In order to prevent parasitic accumulation in the gas inlet organ, the gas outlet surface is formed by a gas-permeable diffuser plate, which can extend parallel to a gas outlet plate having a plurality of gas outlet holes arranged in the form of sieves.
    Type: Application
    Filed: September 15, 2004
    Publication date: April 21, 2005
    Inventors: Holger Jurgensen, Gerhard Strauch
  • Publication number: 20050026392
    Abstract: The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.
    Type: Application
    Filed: June 21, 2004
    Publication date: February 3, 2005
    Inventors: Holger Jurgensen, Alois Krost, Armin Dadgar
  • Publication number: 20050025909
    Abstract: The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.
    Type: Application
    Filed: June 21, 2004
    Publication date: February 3, 2005
    Inventors: Holger Jurgensen, Alois Krost, Armin Dadgar