Abstract: The present invention provides a composition comprising dendritic cells loaded with hHsp60sp, which dendritic cells are from a subject and have been fixed with paraformaldehyde (PFA). The subject may suffer from an autoimmune disease. Also provided are a method for preparing the composition; recombinant human cells comprising a heterologous gene encoding a fusion protein of HLA-E and hHsp60sp or B7sp, and expressing the fusion protein on the surface of the cells; a method for determining a percentage of maximum inhibition of testing the function of the HLA-E restricted CD8+ Treg cells from a subject, determining whether HLA-E restricted CD8+ Treg cells freshly isolated from a subject are defective, or determining whether defective HLA-E restricted CD8+ Treg cells from a subject are correctable; and a method for correcting defective HLA-E restricted CD8+ Treg cells, treating type 1 diabetes (T1D), or treating multiple sclerosis (MS).

Abstract: A hybrid vehicle includes an electric motor and a combustion engine. A K0 clutch couples the combustion engine to a drivetrain of the vehicle. A control module of the vehicle calculates a torque to be applied by the motor to the K0 clutch when initiating engagement of the combustion engine to the drivetrain. The control module calculates two separate torque lead values by two separate methods and calculates the torque by combining the two torque lead values.

Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.

Abstract: The present invention provides a composition comprising dendritic cells loaded with hHsp60sp, which dendritic cells are from a subject and have been fixed with paraformaldehyde (PFA). The subject may suffer from an autoimmune disease. Also provided are a method for preparing the composition; recombinant human cells comprising a heterologous gene encoding a fusion protein of HLA-E and hHsp60sp or B7sp, and expressing the fusion protein on the surface of the cells; a method for determining a percentage of maximum inhibition of testing the function of the HLA-E restricted CD8+ Treg cells from a subject, determining whether HLA-E restricted CD8+ Treg cells freshly isolated from a subject are defective, or determining whether defective HLA-E restricted CD8+ Treg cells from a subject are correctable; and a method for correcting defective HLA-E restricted CD8+ Treg cells, treating type 1 diabetes (T1D), or treating multiple sclerosis (MS).

Abstract: Devices and methods of manufacture for a graduated, “step-like,” capacitance structure having two or more capacitors. A semiconductor structure comprising a capacitor structure, the capacitor structure comprising a first capacitor and a second capacitor. The first capacitor comprising a first bottom electrode and a top electrode having a bottom surface that is a first distance from a top surface of the first bottom electrode. The second capacitor comprising a second bottom electrode and the top electrode, in which the bottom surface is a second distance from a top surface of the second bottom electrode, and in which the first distance is different from the second distance.

Abstract: A method for fabricating a MOMCAP includes steps as follows: An Nth metal layer is formed on a substrate according to an Nth expected capacitance value of the Nth metal layer. An Nth capacitance error value between an Nth actual capacitance value of the Nth metal layer and the Nth expected capacitance value is calculated. An N+1th expected capacitance value of an N+1th metal layer is adjusted to form an N+1th actual capacitance value according to the Nth capacitance error value, and the N+1th metal layer with an N+1th actual capacitance value is formed on the Nth metal layer according to the adjusted N+1th expected capacitance value, to make the sum of the Nth actual capacitance value and the N+1th actual capacitance value equal to the sum of the Nth expected capacitance value and the N+1th expected capacitance value. N is an integer greater than 1.

Abstract: The present disclosure discloses a recombinant varicella-zoster virus (VZV) vaccine, including a fusion protein formed by an amino acid sequence of an extracellular domain of a recombinant glycoprotein gE of a live attenuated VZV strain (OKA strain) gene and an Fc fragment of human immunoglobulin. The present disclosure further provides preparation and use of the fusion protein, a corresponding recombinant gene, a eukaryotic expression vector, etc. The fusion protein of the present disclosure has prominent immunogenicity and can induce the high-level expression of neutralizing antibodies in serum.

Abstract: Methods and system are described for changing a driveline gear range from a higher gear range to a lower gear range. The driveline may include two electric machines and four clutches in a four wheel drive configuration. The methods and systems permit a driveline to change from a higher gear range to a lower gear range without stopping a vehicle.

Abstract: Provided is a system for constructing mobile electric energy interconnection. The system includes at least one mobile electric energy exchange device, a mobile electric energy interconnection management platform and at least one stationary electric energy interconnection device. The mobile electric energy interconnection management platform is configured to match the at least one mobile electric energy exchange device with the at least one stationary electric energy interconnection device, and push a matching result to the at least one mobile electric energy exchange device and the at least one stationary electric energy interconnection device. Also provided is a method for constructing mobile electric energy interconnection, a data testing method and device, and a computer readable storage medium.

Abstract: The present disclosure describes a convergent liquid phase process for manufacturing oligonucleotides by coupling two or more oligonucleotide fragments, each of which have two or more nucleotides. Also provided by the present disclosure are reaction steps involved the convergent liquid phase process.

Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.

Abstract: A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

Abstract: A communication server and accompanying communication devices allow near instantaneous communication between users of the communication devices. A communication device may be configured with multiple channels, where each channel is assigned a corresponding communication device. As the communication devices are registered with the communication server, each communication device has knowledge of other registered communication devices. Thus, communication devices may communicate nearly instantaneously with each other. Furthermore, as the communication device is equipped with multiple channels, a single communication device may host a conference call with other communication devices.

Abstract: A device structure may include an interconnect-level dielectric material layer located over a substrate, a first metal interconnect structure embedded in the interconnect-level dielectric material layer and including a first metallic barrier liner and a first metallic fill material portion, and an overlying dielectric material layer. An opening in the overlying dielectric material layer may be formed entirely within an area of the first metallic barrier layer and outside the area of the first metallic fill material portion to reduce plasma damage. A second metal interconnect structure contacting a top surface of the first metallic barrier liner may be formed in the opening. An entirety of a top surface the first metallic fill material portion contacts a bottom surface of the overlying dielectric material layer.

Abstract: Matrix multiply units can take advantage of input sparsity by zero gating ALUs, which saves power consumption, but compute throughput does not increase. To improve compute throughput from sparsity, processing resources in a matrix accelerator can skip computation with zero involved in input or output. If zeros in input can be skipped, the processing units can focus calculations on generating meaningful non-zero output.

Abstract: The disclosure relates to an artificial intelligence-based difficult airway evaluation method and device. The method includes the following steps: acquiring facial images of various postures; constructing a feature extraction network based on facial recognition, and extracting feature information of the facial images through the trained feature extraction network; and constructing a difficult airway classifier based on a machine learning algorithm, and performing difficult airway severity scoring on the extracted feature information of the facial images through the trained difficult airway classifier to obtain an evaluation result of a difficult airway. According to the present disclosure, early warning can be accurately provided for difficult airways in clinical anesthesia.

Abstract: A method of forming a semiconductor structure includes forming a first conductive contact in a first dielectric layer coupled to a first device and forming a second conductive contact in the first dielectric layer coupled to a second device. A first trench is formed in the first dielectric layer having a first depth and exposing at least a portion of the first conductive contact. A second trench is formed in the first dielectric layer having a second depth different than the first depth and exposing at least a portion of the second conductive contact. A first conductive layer is formed in the first trench and the second trench. A second dielectric layer is formed in the first trench and the second trench over the first conductive layer.

Abstract: According to one aspect of the present disclosure, there is provided a device that includes: a first quadrature modulator configured to receive an in-phase portion of a baseband signal and a quadrature portion of the baseband signal, and to produce a first portion of an output signal according to the in-phase and quadrature portions of the baseband signal; a second quadrature modulator configured to receive a first modified signal and a second modified signal, and to produce a second portion of the output signal according to the first and second modified signals; an output circuit configured to sum the first and second portions of the output signal, and to transmit the output signal to an antenna; and a mode selection circuit configured to turn on the first quadrature modulator, to receive a control signal, and to determine whether to turn on the second quadrature modulator according to the control signal.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.

Abstract: A capacitance detection circuit, a touch control chip and an electronic device are provided, which could reduce the influence of a display screen noise on capacitance detection. The capacitance detection circuit includes: an amplification circuit, connected to a detection capacitance in a touch screen, and configured to amplify a capacitance signal of the detection capacitance and convert the capacitance signal into a voltage signal, the voltage signal configured to determine the detection capacitance; and a control circuit, connected to the amplification circuit, and configured to control a magnification of the amplification circuit, where a period in which a noise peak of a noise signal of a display screen is located includes consecutive N sub-periods, and a magnification of the amplification circuit in the N sub-periods is inversely proportional to a magnitude of the noise signal in the N sub-periods, N>1.