Abstract: A substantially transparent display substrate is provided. The substantially transparent display substrate includes a base substrate; multiple insulating layers on the base substrate and in a display area of the substantially transparent display substrate; and a plurality of grooves in at least a first insulating layer of the multiple insulating layers, wherein at least one of the plurality of grooves at least partially extending into the first insulating layer. The display area includes a plurality of subpixel regions spaced apart from each other by an inter-subpixel region. A respective one of the plurality of subpixel regions includes a light emitting sub-region and a substantially transparent sub-region. At least a portion of a respective one of the plurality of grooves is about an edge of the substantially transparent sub-region of the respective one of the plurality of subpixel regions.

Abstract: It is related to an array substrate (1). The array substrate (1) may include a base substrate (10) and a pixel define layer (30) on the base substrate (1). The pixel define layer (30) may include a plurality of thickness thinning regions (312). The thickness thinning regions (312) may have a smaller height than other areas of the pixel define layer (30) on the base substrate (1). The plurality of the thickness thinning regions (312) may be configured to guide flow of fillers to form an encapsulating layer (40) on the pixel define layer (30).

Abstract: A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.

Abstract: A method of manufacturing a display substrate, a display substrate and a display panel are provided. The method of manufacturing a display substrate includes: infiltrating an etching point of a film group with an etching solution, to form an infiltration groove at the etching point of a film group; and patterning a remaining part of the film group at the infiltration groove, to obtain a via hole penetrating the remaining part of the film group.

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.

Abstract: An array substrate, a display panel including the array substrate, and a fabrication method of the array substrate are provided. The array substrate includes a base substrate, a light-shielding portion, a thin-film transistor and a capacitor. The light-shielding portion is formed on a first surface of the base substrate. The thin-film transistor is formed on a side of the light-shielding portion away from the base substrate, and includes an active layer. The capacitor is formed on the first surface of the base substrate, and includes a first capacitive electrode and a second capacitive electrode. The first capacitive electrode and the second capacitive electrode are at least partially arranged opposite to each other in a direction perpendicular to the first surface of the base substrate. The first capacitive electrode is provided in a same layer as the light-shielding portion.

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.

Abstract: The present disclosure provides a fabricating method of an array substrate, comprising: forming a pattern comprising a light shading member; spreading an organic material solution; solidifying the organic material solution, to form a buffer layer; forming a pattern of an active layer on the buffer layer, wherein a position of the active layer corresponds to a position of the light shading member; and forming a gate pattern, where the gate pattern is located on the active layer and is insulated from the active layer. Correspondingly, the present disclosure further provides an array substrate and a display device.

Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

Abstract: The present disclosure provides a fabricating method of an array substrate, comprising: forming a pattern comprising a light shading member; spreading an organic material solution; solidifying the organic material solution, to form a buffer layer; forming a pattern of an active layer on the buffer layer, wherein a position of the active layer corresponds to a position of the light shading member; and forming a gate pattern, where the gate pattern is located on the active layer and is insulated from the active layer. Correspondingly, the present disclosure further provides an array substrate and a display device.

Abstract: The present application discloses an organic light emitting diode display substrate. The organic light emitting diode display substrate includes a base substrate; an auxiliary cathode on the base substrate; a spacer layer on the base substrate and including a plurality of spacers; and a flexible transparent conductive layer on a side of each of the plurality of spacers distal to the base substrate. The flexible transparent conductive layer is electrically connected to the auxiliary cathode.

Abstract: The present disclosure relates to a thin film transistor, a method for fabricating the same, an array substrate, a method for fabricating the same, and a display device. The thin film transistor includes an active layer disposed on a base substrate and a gate stack disposed on the active layer. The gate stack includes: a gate insulating layer disposed on the active layer; a gate electrode disposed on the gate insulating layer; a capping layer disposed on the gate electrode, wherein the capping layer capturing oxygen atoms more easily than the gate electrode.

Abstract: The present application provides a thin film transistor, a method of fabricating a thin film transistor and an array substrate. The thin film transistor includes: a gate electrode on a substrate and having first and second side surfaces facing each other; and an active layer between the first side surface and the second side surface of the gate electrode and having a third side surface and a fourth side surface. The third side surface of the active layer and the first side surface of the gate electrode face and are spaced apart from each other, the fourth side surface of the active layer and the second side surface of the gate electrode face and are spaced apart from each other, and at least one portion of the gate electrode is in the same range as at least one portion of the active layer in a height direction.

Abstract: A thin film transistor and a manufacturing method thereof, and an array substrate are disclosed. The thin film transistor includes a gate electrode, an insulating layer, an active layer and a source/drain electrode layer, and further includes a light shielding layer, and the light shielding layer is configured to block light from entering the active layer via the insulating layer, and the light shielding layer and the gate electrode are arranged in a same layer and electrically unconnected with each other. The thin film transistor can reduce the light irradiated to the active layer and thus reduce the adverse impact thus incurred.

Abstract: An array substrate, a manufacture method thereof, and a display device are provided. The array substrate includes a first electrode (12), a second electrode (15); a light-emitting functional layer (13) located between the first electrode (12) and the second electrode (15); and an organic planar layer (14). The first electrode (12) is formed on the organic planar layer (14). The first electrode (12) includes metal electrode or metal alloy electrode. An oxide conductive layer (16) is further formed between the organic planar layer (14) and the first electrode (12).

Abstract: The present disclosure relates to a display substrate, a manufacturing method thereof, and a display device. The display substrate comprises: a plurality of sub-pixels arranged in an array; a base substrate; and an interlayer insulating layer, at least one heightened part and a plurality of signal wires, sequentially disposed on the base substrate, wherein an orthographic projection of the heightened part on the base substrate is located between orthographic projections of two adjacent sub-pixels on the base substrate, and two adjacent signal wires between the two adjacent sub-pixels are located on two sides of the heightened part and at least partially cover two lateral sides of the heightened part respectively.

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

Abstract: The present application discloses an organic light emitting diode display substrate. The organic light emitting diode display substrate includes a base substrate; an auxiliary cathode on the base substrate; a spacer layer on the base substrate and including a plurality of spacers; and a flexible transparent conductive layer on a side of each of the plurality of spacers distal to the base substrate. The flexible transparent conductive layer is electrically connected to the auxiliary cathode.

Abstract: Provided are a thin film transistor and manufacturing method therefor, and an array substrate, and a display device. The method includes: forming a source electrode and a drain electrode on a substrate; forming a photoresist layer at the side of the source electrode and the drain electrode away from the substrate; performing exposure and developing treatment on the photoresist layer so as to obtain a photoresist pattern; successively forming a semiconductor layer, a first insulation layer and a conducting layer in sequence on at the side of the photoresist pattern away from the substrate; and removing the photoresist pattern so as to obtain an active layer a gate insulation layer and a gate electrode.