Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.

Abstract: The present disclosure provides a touch circuit, a touch panel and a display device. The touch circuit includes: a plurality of touch signal lines electrically connected with a control circuit, a voltage signal line for providing a preset voltage, and a plurality of switching circuits in one to one correspondence with the touch signal lines, wherein each switching circuit of the plurality of the switching circuits is electrically connected with the corresponding touch signal line and the voltage signal line, the switching circuit is configured to be in an off state under a condition that a voltage value on the corresponding touch signal line is within a preset range, and is also configured to be in an on state under a condition that the voltage value on the corresponding touch signal line is not within the preset range.

Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

Abstract: The disclosure relates to the field of display technology. A display substrate motherboard and a method for manufacturing the same are disclosed. In the technical solution provided by the embodiments of the disclosure, by providing via holes formed in the film, instead of small area island-like film patterns, as stitch marks of the display substrate motherboard, a possibility of stitch mark peeling is reduced, thereby further ensuring a reliability and yield of product.

Abstract: The present disclosure relates to an organic light-emitting backplane and manufacturing method thereof, a touch display screen and a touch display device. The organic light-emitting backplane comprises a display region and a non-display region located around the display region, the organic light-emitting backplane in the non-display region comprising: a first substrate; a padding layer located on a side of the first substrate, the padding layer comprising a body portion and a convex pattern portion located on a side of the body portion away from the first substrate; and a first wiring layer located on a side of the padding layer away from the first substrate, at least apart of the first wiring layer being formed on a surface of the convex pattern portion.

Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of an organic acetylene molecule containing an acetylene bond and at least two or multi ethoxylate functional groups with terminal hydroxyl groups, an organic molecule with at least two or multi hydroxyl functional groups in the same molecule, and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.

Abstract: Metal compound chemically anchored colloidal particles wherein the metal compound is in molecular form are disclosed. A facile and fast process to chemically anchor metal compounds uniformly onto colloidal particle surfaces via chemical bonding has been developed. Metal compounds are chemically anchored to the surface of colloidal particles via an organic linking agent. Uniformly distributed metal compounds remain in molecular form after the process. The metal compound chemically anchored colloidal particles can be used as solid catalyst in metal chemical-mechanical planarization process.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Abstract: Chemical mechanical polishing (CMP) compositions, systems and methods of using the compositions for polishing tungsten or tungsten-containing substrates. The compositions comprise nano-sized abrasive; metal compound coated organic polymer particles as solid state catalyst; oxidizer; tungsten corrosion inhibitor; and a water based liquid carrier.

Abstract: Provided are a display panel, chip-on-film, and display device. The display panel includes a display region and a bonding region; bonding region includes: a first substrate, and at least one row of first pins arranged on one side of the first substrate, the first pins being arranged along the first direction and being independent of each other; the distance between two adjacent first pins in the same row at the end near the display region is greater than the distance (d2) at the other end away from the display region, such that the whole of the at least one row of first pins has an inverted trapezoid-like structure having long sides near the display region.

Abstract: The present invention discloses STI CMP polishing compositions, methods and systems that significantly reduce oxide trench dishing and improve over-polishing window stability in addition to provide high and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable high selectivity of SiO2:SiN through the use of an unique combination of ceria inorganic oxide particles, such as ceria coated silica particles as abrasives, and an oxide trench dishing reducing additive of poly(methacrylic acids), its derivatives, its salts, or combinations thereof.

Abstract: Provided are a flexible display substrate, a display panel, a display device, and a manufacturing method, relating to the technical field of display. The flexible display substrate is provided with a first bonding and a second bonding region. The first bonding region and the second bonding region are configured to be bonded to an electronic component, and a thickness of the flexible display substrate in the first bonding region is greater than a thickness of the flexible display substrate in the second bonding region in a direction perpendicular to the flexible display substrate.

Abstract: The disclosure relates to the field of display technology. A display substrate motherboard and a method for manufacturing the same are disclosed. In the technical solution provided by the embodiments of the disclosure, by providing via holes formed in the film, instead of small area island-like film patterns, as stitch marks of the display substrate motherboard, a possibility of stitch mark peeling is reduced, thereby further ensuring a reliability and yield of product.

Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.