Patents by Inventor Hongkun Park
Hongkun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100258784Abstract: A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions.Type: ApplicationFiled: September 18, 2008Publication date: October 14, 2010Inventors: Mikhail D. Lukin, Alexander S. Zibrov, Alexey V. Akimov, Philip R. Hemmer, Hongkun Park, Aryesh Mukherjee, Darrick E. Chang, Chun Liang Yu
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Publication number: 20100243990Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: June 2, 2010Publication date: September 30, 2010Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20100155698Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: June 26, 2009Publication date: June 24, 2010Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20100022012Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: September 30, 2009Publication date: January 28, 2010Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 7619290Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: GrantFiled: February 27, 2008Date of Patent: November 17, 2009Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20090057650Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: February 27, 2008Publication date: March 5, 2009Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20080211040Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: February 27, 2008Publication date: September 4, 2008Applicant: President and fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 7385267Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: GrantFiled: October 17, 2006Date of Patent: June 10, 2008Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenji Liang
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Publication number: 20080003839Abstract: Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.Type: ApplicationFiled: June 19, 2007Publication date: January 3, 2008Inventors: Hongkun Park, Charles Lieber, Jeffrey Urban, Qian Gu, Wan Yun
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Publication number: 20070281156Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: March 21, 2006Publication date: December 6, 2007Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
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Patent number: 7301199Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: GrantFiled: July 16, 2002Date of Patent: November 27, 2007Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Patent number: 7256466Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: GrantFiled: December 15, 2004Date of Patent: August 14, 2007Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20070158766Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: October 17, 2006Publication date: July 12, 2007Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Patent number: 7129554Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.Type: GrantFiled: December 11, 2001Date of Patent: October 31, 2006Assignee: President & Fellows of Harvard CollegeInventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20060175601Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: June 30, 2005Publication date: August 10, 2006Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20060054936Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: December 15, 2004Publication date: March 16, 2006Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
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Publication number: 20050064731Abstract: Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.Type: ApplicationFiled: July 22, 2002Publication date: March 24, 2005Inventors: Hongkun Park, Charles Lieber, Jeffrey Urban, Oian Gu, Wan Yun
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Publication number: 20030089899Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: July 16, 2002Publication date: May 15, 2003Inventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20020117659Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.Type: ApplicationFiled: December 11, 2001Publication date: August 29, 2002Inventors: Charles M. Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang