Patents by Inventor Hongmei Wang

Hongmei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12387486
    Abstract: This invention relates to a data dimension reduction method based on maximizing a ratio sum for linear discriminant analysis, which belongs to the fields of image classification and pattern recognition. It includes constructing a data matrix, a label vector and a label matrix; calculating a within-class covariance matrix and a between-class covariance matrix; constructing the optimization problem based on maximizing the ratio sum for the linear discriminant analysis; using the alternating direction method of multipliers to obtain the projection matrix which can maximize an objective function. This invention establishes the objective function based on maximizing the ratio sum for the linear discriminant analysis to avoid the problem that the traditional linear discriminant analysis tends to select features with small variances and weak discriminating ability. It can select features which are more conducive to classification.
    Type: Grant
    Filed: April 29, 2021
    Date of Patent: August 12, 2025
    Assignee: NORTHWESTERN POLYTECHNICAL UNIVERSITY
    Inventors: Jingyu Wang, Hongmei Wang, Feiping Nie, Xuelong Li
  • Publication number: 20240363241
    Abstract: Systems, apparatuses, and methods related to medical device data analysis are described. In some examples, a medical device is implanted in a user of the medical device and the data generated by the medical device is not easily accessible to the user. In an example, a controller can be configured to receive, by a mobile device coupled to a medical device, data from the medical device, where the data is a part of a baseline dataset related to the medical device. The controller can be configured to receive different data from the medical device, where the different data is received from the medical device as the different data is generated by the medical device, analyze the data from the medical device and the different data generated by the medical device, and perform an action based on the analyzed data and the different data generated by the medical device.
    Type: Application
    Filed: July 5, 2024
    Publication date: October 31, 2024
    Inventors: Gitanjali T. Ghosh, Irene K. Thompson, Jessica M. Maderos, Hongmei Wang, Fatma Arzum Simsek-Ege, Kathryn H. Russo
  • Patent number: 12033753
    Abstract: Systems, apparatuses, and methods related to medical device data analysis are described. In some examples, a medical device is implanted in a user of the medical device and the data generated by the medical device is not easily accessible to the user. In an example, a controller can be configured to receive, by a mobile device coupled to a medical device, data from the medical device, where the data is a part of a baseline dataset related to the medical device. The controller can be configured to receive different data from the medical device, where the different data is received from the medical device as the different data is generated by the medical device, analyze the data from the medical device and the different data generated by the medical device, and perform an action based on the analyzed data and the different data generated by the medical device.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: July 9, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Gitanjali T. Ghosh, Irene K. Thompson, Jessica M. Maderos, Hongmei Wang, Fatma Arzum Simsek-Ege, Kathryn H. Russo
  • Patent number: 12020745
    Abstract: An apparatus may include a first matrix comprising a first plurality of digit lines, a second matrix comprising a second plurality of digit lines, a plurality of sense amplifiers, and a plurality of selector circuits. Each selector circuit of the plurality of selector circuits may be configured to selectively couple a respective sense amplifier to either a first digit line of the first plurality of digit lines or a second digit line of the second plurality of digit lines.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: June 25, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Soichi Sugiura
  • Publication number: 20240055190
    Abstract: Methods, systems, and devices for programmable chalcogenide capacitors are described. A first programming pulse may be applied, for a first duration, to a capacitor comprising a chalcogenide material to adjust a capacitance of the capacitor from a first capacitance to a second capacitance. A pulse may be applied to the capacitor based on applying the first programming pulse to the capacitor. A first voltage may be stored in the capacitor based on adjusting the capacitance of the capacitor from the first capacitance to the second capacitance, and the first voltage may be stored based on the capacitor having the second capacitance.
    Type: Application
    Filed: August 9, 2022
    Publication date: February 15, 2024
    Inventors: Hongmei Wang, Huiqi Gong, Peng Zhao, Jingshan Wang, Giovanni Ferrari
  • Publication number: 20240029431
    Abstract: This invention relates to a data dimension reduction method based on maximizing a ratio sum for linear discriminant analysis, which belongs to the fields of image classification and pattern recognition. It includes constructing a data matrix, a label vector and a label matrix; calculating a within-class covariance matrix and a between-class covariance matrix; constructing the optimization problem based on maximizing the ratio sum for the linear discriminant analysis; using the alternating direction method of multipliers to obtain the projection matrix which can maximize an objective function. This invention establishes the objective function based on maximizing the ratio sum for the linear discriminant analysis to avoid the problem that the traditional linear discriminant analysis tends to select features with small variances and weak discriminating ability. It can select features which are more conducive to classification.
    Type: Application
    Filed: April 29, 2021
    Publication date: January 25, 2024
    Inventors: Jingyu WANG, Hongmei WANG, Feiping NIE, Xuelong LI
  • Publication number: 20230410895
    Abstract: An apparatus may include a first matrix comprising a first plurality of digit lines, a second matrix comprising a second plurality of digit lines, a plurality of sense amplifiers, and a plurality of selector circuits. Each selector circuit of the plurality of selector circuits may be configured to selectively couple a respective sense amplifier to either a first digit line of the first plurality of digit lines or a second digit line of the second plurality of digit lines.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 21, 2023
    Inventors: Hongmei Wang, Soichi Sugiura
  • Patent number: 11776625
    Abstract: Systems, methods, and apparatus related to selecting memory cells in a memory array of a memory device. In one approach, bias circuitry generates a voltage on an access line used to select a memory cell for programming. During programming, a controller connects a boost capacitor to the access line by controlling a switch. Connecting the boost capacitor causes an increase in the rate of discharge of the access line (e.g., discharge of a word line to a negative voltage). After programming, the controller disconnects the boost capacitor from the access line, and the boost capacitor is pre-charged in preparation for a next programming operation (e.g., on the same or a different memory cell).
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: October 3, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Mingdong Cui, Hongmei Wang, Hari Giduturi
  • Patent number: 11710528
    Abstract: Methods, systems, and devices for data-based polarity write operations are described. A write command may cause a set of data to be written to a set of memory cells. To write the set of data, a write operation that applies voltages across the memory cells based on a logic state of data to be written to the memory cells may be used. During a first interval of the write operation, a voltage may be applied across a memory cell based on a logic state of a data bit to be written to the memory cell. During a second interval of the write operation, a voltage may be applied across the memory cell based on an amount of charge conducted by the memory cell during the first interval.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: July 25, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Karthik Sarpatwari, Nevil N. Gajera, Hongmei Wang, Mingdong Cui
  • Patent number: 11710517
    Abstract: Methods, systems, and devices for write operation techniques for memory systems are described. In some memory systems, write operations performed on target memory cells of the memory device may disturb logic states stored by one or more adjacent memory cells. Such disturbances may cause reductions in read margins when accessing one or more memory cells, or may cause a loss of data in one or more memory cells. The described techniques may reduce aspects of logic state degradation by supporting operational modes where a host device, a memory device, or both, refrains from writing information to a region of a memory array, or inhibits write commands associated with write operations on a region of a memory array.
    Type: Grant
    Filed: January 5, 2022
    Date of Patent: July 25, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Zhongyuan Lu, Christina Papagianni, Hongmei Wang, Robert J. Gleixner
  • Patent number: 11651825
    Abstract: The present disclosure includes systems, apparatuses, and methods related to generating a random data value. For example, a first read operation may be performed on a memory cell programmed to a first state, wherein the first read operation is performed using a first read voltage that is within a predetermined threshold voltage distribution corresponding to the first state. A programming signal may be applied to the memory cell responsive to the first read operation resulting in a snapback event, wherein the programming signal is configured to place the memory cell in a second state. A second read operation may be performed to determine whether the memory cell is in the first state or the second state using a second read voltage that is between the predetermined threshold voltage distribution corresponding to the first state and a second threshold voltage distribution corresponding to the second state.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: May 16, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Zhongyuan Lu, Hongmei Wang, Robert J. Gleixner
  • Publication number: 20230115339
    Abstract: Systems, methods, and apparatus related to selecting memory cells in a memory array of a memory device. In one approach, bias circuitry generates a voltage on an access line used to select a memory cell for programming. During programming, a controller connects a boost capacitor to the access line by controlling a switch. Connecting the boost capacitor causes an increase in the rate of discharge of the access line (e.g., discharge of a word line to a negative voltage). After programming, the controller disconnects the boost capacitor from the access line, and the boost capacitor is pre-charged in preparation for a next programming operation (e.g., on the same or a different memory cell).
    Type: Application
    Filed: October 7, 2021
    Publication date: April 13, 2023
    Inventors: Mingdong Cui, Hongmei Wang, Hari Giduturi
  • Patent number: 11587635
    Abstract: An example apparatus can include a memory array and control circuitry. The memory array can include a first portion including a first plurality of memory cells. The memory array can further include a second portion including a second plurality of memory cells. The control circuitry can be configured to designate the first portion as active responsive to a determination that the first portion passed a performance test. The control circuitry can be configured to designate the second portion as inactive responsive to a determination that the second portion failed the performance test.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: February 21, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Nevil N. Gajera, Mingdong Cui, Fabio Pellizzer
  • Publication number: 20230032645
    Abstract: A mirror therapy device includes a first positioning assembly, a second positioning assembly and a transmission assembly connecting the first and second positioning assemblies. The first and second positioning assemblies are arranged in opposition to each other in such a manner that both are able to reciprocate. The first positioning assembly is configured for positioning of a healthy limb of a patient, and the second positioning assembly is configured for positioning of an affected limb of the patient. The transmission assembly is configured for power transmission between the first and second positioning assemblies so that the second positioning assembly moves in synchronization with the first positioning assembly under the action of the transmission assembly. A mirror therapy system includes the mirror therapy device and a display device.
    Type: Application
    Filed: November 30, 2020
    Publication date: February 2, 2023
    Inventors: Tian TIAN, Zhijun GAO, Hongmei WANG, Tong ZHOU
  • Publication number: 20220415394
    Abstract: A memory device having memory cells, voltage drivers, and a controller configured to determine, based on an attribute of a memory cell, whether to apply a drift cancellation pulse that is in the opposite polarity of a programming pulse configured to place the memory cell in a state to represent a bit of data. If the drift in the state of the memory cell from a previous programming operation to write data into the memory cell is predicted to be insufficient to prevent the selection of the memory cell during the application of the programming pulse, the drift cancellation pulse is skipped. Otherwise, the drift cancellation pulse is applied in the opposite polarity of the programming pulse.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 29, 2022
    Inventors: Hongmei Wang, Mingdong Cui, Nevil N. Gajera
  • Patent number: 11538860
    Abstract: Methods, systems, and devices for memory arrays having graded memory stack resistances are described. An apparatus may include a first subset of memory stacks having a first resistance based on a physical and/or electrical distance of the first subset of memory stacks from at least one of a first driver component or a second driver component. The apparatus may include a second subset of memory stacks having a second resistance that is less than the first resistance based on a physical and/or electrical distance of the second subset of memory from at least one of the first driver component or the second driver component.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: December 27, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Fabio Pellizzer, Lorenzo Fratin, Hongmei Wang
  • Publication number: 20220348879
    Abstract: The present invention relates to the field of cell therapy, and specifically relates to a method for producing a mesenchymal stem cell population, the mesenchymal stem cell population and a culture supernatant thereof produced by the method, and a pharmaceutical composition containing such cells or the culture supernatant thereof. The present invention further relates to use of the mesenchymal stem cell population and the culture supernatant thereof for preventing and treating diseases.
    Type: Application
    Filed: September 21, 2020
    Publication date: November 3, 2022
    Inventors: Qi ZHOU, Baoyang HU, Jie HAO, Wei LI, Jun WU, Liu WANG, Baojie GUO, Zhongwen LI, Tingting GAO, Yanxia CHEN, Hongmei WANG
  • Publication number: 20220328104
    Abstract: The present disclosure includes systems, apparatuses, and methods related to generating a random data value. For example, a first read operation may be performed on a memory cell programmed to a first state, wherein the first read operation is performed using a first read voltage that is within a predetermined threshold voltage distribution corresponding to the first state. A programming signal may be applied to the memory cell responsive to the first read operation resulting in a snapback event, wherein the programming signal is configured to place the memory cell in a second state. A second read operation may be performed to determine whether the memory cell is in the first state or the second state using a second read voltage that is between the predetermined threshold voltage distribution corresponding to the first state and a second threshold voltage distribution corresponding to the second state.
    Type: Application
    Filed: April 12, 2021
    Publication date: October 13, 2022
    Inventors: Zhongyuan Lu, Hongmei Wang, Robert J. Gleixner
  • Patent number: D1074920
    Type: Grant
    Filed: September 11, 2024
    Date of Patent: May 13, 2025
    Assignee: JIN FANG TECHNOLOGY (HONG KONG) LIMITED
    Inventor: Hongmei Wang
  • Patent number: D1074921
    Type: Grant
    Filed: September 11, 2024
    Date of Patent: May 13, 2025
    Assignee: JIN FANG TECHNOLOGY (HONG KONG) LIMITED
    Inventor: Hongmei Wang