Abstract: An AC/DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.

Abstract: Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.

Abstract: Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.

Abstract: Disclosed are detector devices and related methods. In an Al EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.

Abstract: A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: Microlenses and microlens arrays made from Group III-nitride material.

Abstract: An AC/DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.

Abstract: Disclosed are the materials and methods used to package and encapsulate UV and DUV LEDs. These LEDs have emission wavelengths in the range from around 360 nm to around 200 nm. The UV/DUV LED die or its flip-chip bonded subassembly are disposed in a low thermal resistance packaging house. Either the whole package or just the UV/DUV LED is globed with a UV/DUV transparent dome-shape encapsulation. This protects the device, enhances light extraction, and focuses the light emitted. The dome-shape encapsulation may be comprised of optically transparent PMMA, fluorinated polymers or other organic materials. Alternatively it might be configured having a lens made from sapphire, fused silica or other transparent materials. The lens material is cemented on the UV/DUV LED with UV/DUV transparent polymers.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: A transistor with improved device characteristics includes a substrate, a first buffer layer deposited on the substrate, a highly resistive epilayer deposited on the buffer layer, a second epilayer deposited on the highly resistive epilayer, a channel layer deposited on the second epilayer, an AlGaN alloy epilayer deposited on the channel layer, and source, gate, and drain connections deposited on the AlGaN alloy epilayer. The highly resistive epilayer may include AlGaN, InAlGaN, AlBN, or AlN compositions. The channel layer may include InGaN, graded InGaN, multilayers of InGaN and GaN, or GaN.

Abstract: Microlenses and microlens arrays made from Group III-nitride material.

Abstract: A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Abstract: A micro-size LED-like optical element has an n-contact, a p-contact, and an optical active structure connected between the n-contact and the p-contact for generating light when forward biased and for detecting light when reverse biased. The optical active structure has a diameter of about 20 &mgr;m or smaller. When the the optical active structure is forward biased, it forms a micro-size LED (&mgr;LED). When the optical active structure is reverse biased, it forms a micro-size detector (&mgr;detector). An array of the micro-size optical active structures may be used as a minidisplay, a detector, or a sensor (when each structure is separately wired), or as a hyperbright LED (when the structures are wired to turn on and off simultaneously). Alternatively, a hyperbright LED may be obtained by forming a plurality of micro-size holes extending into an LED wafer.

Abstract: Mixed II-VI crystal semiconductors (10) having the general formula Zn.sub.x Cd.sub.1-x Se, where x is up to about 0.4, are provided which exhibit persistent photoconductivity (PPC) above 70.degree. K. which is quencable by infrared radiation. An electrical apparatus (12) utilizing the crystal (10) of the invention is further provided. The apparatus (12) preferably includes a pair of electrical terminals (14, 16) coupled to the crystal (10), circuit-defining structure (18) connecting the terminal (14, 16) coupled with a power source (19) and a current responsive device (20) being in series with the crystal (10). Action of visible light on the crystal (10) induces PPC, completing an electrical circuit and initiating current flow. Incident infrared light on the crystal (10) quenches PPC and decreases current flow.