Patents by Inventor Hongxing Jiang

Hongxing Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5072122
    Abstract: Mixed II-VI crystal semiconductors (10) having the general formula Zn.sub.x Cd.sub.1-x Se, where x is up to about 0.4, are provided which exhibit persistent photoconductivity (PPC) above 70.degree. K. which is quenchable by infrared radiation. An electrical apparatus (12) utilizing the crystal (10) of the invention is also provided. An imaging apparatus (70) is further provided which includes a charge storage image device (72) having an array (82) of mixed II-VI semiconductor elements (84). A visible or an infrared image is stored in array (82) by first initializing array (82) and then exposing elements (84) to the image to be recorded.
    Type: Grant
    Filed: October 15, 1990
    Date of Patent: December 10, 1991
    Assignee: Kansas State University Research Foundation
    Inventors: Hongxing Jiang, Jingyu Lin