Abstract: A method of manufacturing a gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate with a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized. Therefore, the reliability of the device is improved.

Abstract: A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.

Abstract: A MOS capacitor used in an active matrix liquid crystal display is manufactured by a process comprising the steps of forming capacitor electrodes with a dielectric layer between them in a semiconductor layer, forming a p+ diffused region and an n+ diffused region adjacent to the capacitor electrodes in the semiconductor layer, and making a complementary connection between the regions.

Abstract: A liquid crystal display device including a first substrate having a display portion that has transistors, pixel electrodes, scanning bus lines and data bus lines, and a peripheral circuit portion that is connected to the scanning bus lines and the data bus lines, a second substrate that opposes to the first substrate, and a liquid crystal put between the first substrate and the second substrate, comprises color filters formed on or under the pixel electrodes over the transistors in the display portion, and a color resin film for the color filters left in the peripheral circuit portion. Accordingly, the capacitance between wirings can be reduced.

Abstract: A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article.

Abstract: A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

Abstract: To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.

Abstract: A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

Abstract: An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.

Abstract: An electro-optical device such as a liquid crystal device comprises a transparent substrate and a plurality of thin film transistors for driving pixel electrodes. In order to prevent an undesirable influence of light incident on the thin film transistors, a light shielding layer is interposed between the thin film transistors and the transparent substrate. Another portion of the light-shielding layer which corresponds to the pixel electrodes, has been changed to transparent by selectively oxidizing or nitriding the layer.

Abstract: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

Abstract: A common electrode driving circuit is provided on a TFT substrate as a first substrate. Striped common electrodes are formed along the layout of pixels, such as data lines (or scanning lines), on a common substrate as a second substrate. The common electrode driving circuit inverts a common electrode voltage that is applied to a common electrode of an odd-number order, relative to a common electrode voltage that is applied to a common electrode of an even-number order. The common electrode driving circuit inverts these common electrode voltages to match the polarity inversion period at the same time. Based on this, a common inversion driving system is realized, and flicker is reduced according to a lengthwise line (or crosswise line) inversion driving system.

Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

Abstract: An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

Abstract: A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.

Abstract: A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like.

Abstract: There are contained a peripheral circuit portion B having first metal patterns formed on a first substrate, a first insulating film formed on the first metal patterns, a second metal pattern formed on the first insulating film, a second insulating film formed on the second metal pattern to have at least a first resin film, and third metal patterns formed on the second insulating film, and a display portion A having an active element formed on the first substrate and covered with the second insulating film and a second resin film, and a pixel electrode formed in a pixel region on the second insulating film and connected electrically to the active element via a hole that is formed in the second insulating film. Accordingly, the liquid crystal display device that has the display portion A and the peripheral circuit portion B is capable of reducing the capacitance between wirings and improving the throughput.

Abstract: A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.

Abstract: A liquid crystal display includes a pixel cell array formed on a substrate. The pixel cell array includes rows and columns of pixel cells and each pixel cell has a pixel TFT. Gate control lines extend along the respective rows of the pixel cell array and connect the pixel TFTs to a gate control circuit. A termination unit is located near one end of the gate control lines. The termination unit is made up of antenna TFTs, respectively connected to the gate control lines. The antenna TFTs have a size which is much larger than a size of the pixel TFTs and are preferably CMOS type TFTs. The termination unit discharges a static charge which may build up on the gate control lines so that damage to the pixel TFTs caused by the static charge is prevented.

Abstract: A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.