Abstract: A device and method is disclosed for passively checking the concentricity measurement of optical components in an optical assembly. The optical assembly includes a package for a photonic device which has a header and a lens cap having an integrated lens. The photonic device is mounted to the header. A display system can be used to view the photonic device through the lens of the cap. Using a camera with a high magnification lens integrated into the display system, the alignment between the photonic device and the lens in the cap is measured.

Abstract: An edge emitting laser that emits a single mode using photonic mirrors. An edge emitting laser includes an active region that is formed between an n-type semiconductor material and a p-type semiconductor material. Photonic mirrors are formed in the laser to define a gain cavity and an external cavity. The gain cavity is bounded by a cleaved facet and a photonic mirror or by a pair of photonic mirrors. The external cavity is bounded by the photonic mirror of the gain cavity and either a cleaved facet or another photonic mirror. The mode emitted by the laser is determined by characteristics of the photonic mirrors, including the periodic cavity structures of the mirrors.

Abstract: A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.

Abstract: A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with/without DBR layers. The photonic crystal, in one example, forms an external cavity.

Abstract: An edge emitting laser that emits a single mode using photonic mirrors. An edge emitting laser includes an active region that is formed between an n-type semiconductor material and a p-type semiconductor material. Photonic mirrors are formed in the laser to define a gain cavity and an external cavity. The gain cavity is bounded by a cleaved facet and a photonic mirror or by a pair of photonic mirrors. The external cavity is bounded by the photonic mirror of the gain cavity and either a cleaved facet or another photonic mirror. The mode emitted by the laser is determined by characteristics of the photonic mirrors, including the periodic cavity structures of the mirrors.

Abstract: A vertical cavity surface emitting laser (VCSEL) using photonic crystals. Photonic crystals are formed such that the active region of the VCSEL is bounded by the photonic crystals. The photonic crystals have a periodic cavity structure that reflects light of certain wavelengths through the active region of the VCSEL such that laser light at the wavelengths is generated. Additional photonic crystals can be formed to increase the bandwidth of the VCSEL. The photonic crystals can also be combined with distributed bragg reflector layers to form the mirrors of a VCSEL.

Abstract: This invention provides a semiconductor laser device, such as a Vertical Cavity Surface-Emitting Laser (VCSEL) device which includes a Distributed Bragg Reflector (DBR) made up of layers which are co-doped with different dopants. For instance, a p-type DBR produced by organometallic vapor-phase epitaxy (OMPVE) includes layers having, respectively, a low refractive index and a high refractive index, the layers being made, respectively, of high-Al AlGaAs and low-Al AlGaAs. According to the invention, C, by itself or in addition to Mg, is used as the dopant in the high-Al AlGaAs layers, and Mg is used in the low-Al AlGaAs layers. Because of this co-doping, the semiconductor laser device achieves low series resistance and operating voltage, with good manufacturability.