Abstract: The invention relates to an optical communication connection device, which includes an optical receiving unit, an optical transmitting unit, a circuit board and a connection interface. The optical receiving unit and the optical transmitting unit are connected to the connection interface through the circuit board, and the connection interface is used to connect to an external circuit board. The connection interface has a plurality of first connection terminals connected to the circuit board and a plurality of second connection terminals being used to connect to the external circuit board. The second connection terminal is substantially parallel to the external circuit board, and is connected to the external circuit board through surface mount technology, which is not only conducive to reduce the size of the optical communication connection device, but also improve the high-frequency characteristics thereof.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A semiconductor device including a source/drain region having a V-shaped bottom surface and extending below gate spacers adjacent a gate stack and a method of forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a fin; forming a gate spacer on a sidewall of the gate stack; etching the fin with a first anisotropic etch process to form a first recess adjacent the gate spacer; etching the fin with a second etch process using etchants different from the first etch process to remove an etching residue from the first recess; etching surfaces of the first recess with a third anisotropic etch process using etchants different from the first etch process to form a second recess extending below the gate spacer and having a V-shaped bottom surface; and epitaxially forming a source/drain region in the second recess.

Abstract: The present disclosure provides a semiconductor device with an interconnect part and a method for forming the semiconductor device. The semiconductor device includes a first source/drain structure disposed over a carrier substrate, and a backside contact disposed over and electrically connected to the first source/drain structure. The semiconductor device also includes an interconnect part disposed over the backside contact. The interconnect part includes a lower redistribution layer electrically connected to the backside contact, and an upper redistribution layer disposed over the lower redistribution layer. The interconnect part also includes an interconnect frame disposed between and electrically connected to the lower redistribution layer and the upper redistribution layer. The interconnect part further includes a passivation structure surrounding the interconnect frame.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a substrate. A fin is on the substrate. The fin includes silicon germanium. An interfacial layer is over the fin. The interfacial layer has a thickness in a range from greater than 0 nm to about 4 nm. A source/drain region is over the interfacial layer. The source/drain region includes silicon germanium.

Abstract: A reciprocating mechanism includes a first connecting element, a crankshaft and a second connecting element. The crankshaft includes a rotation shaft, a first following element and a second following element. The first following element is pivotally disposed on one side of the rotation shaft and movably coupled to the first connecting element. The second following element is pivotally disposed on the other side of the rotation shaft, and a first angle is formed between the first following element and the second following element. The second connecting element is movably coupled to the second following element. The first following element and the second following element are configured to rotate around the rotation shaft so as to be movably coupled to and cause each of the first connecting element and the second connecting element to reciprocate and cyclically pivot along an arc-shaped trajectory.

Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Abstract: Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.

Abstract: Apparatus, circuits and methods for reducing mismatch in an electro-optic modulator are described herein. In some embodiments, a described optical includes: a splitter configured for splitting an input optical signal into a first optical signal and a second optical signal; a phase shifter coupled to the splitter; and a combiner coupled to the phase shifter. The phase shifter includes: a first waveguide arm configured for controlling a first phase of the first optical signal to generate a first phase-controlled optical signal, and a second waveguide arm configured for controlling a second phase of the second optical signal to generate a second phase-controlled optical signal. Each of the first and second waveguide arms includes: a plurality of straight segments and a plurality of curved segments. The combiner is configured for combining the first and second phase-controlled optical signals to generate an output optical signal.

Abstract: A random bit generator includes a voltage source, a bit data cell, and a sensing control circuit. The voltage source provides a scan voltage during enroll operations. The data cell includes a first transistor and a second transistor. The first transistor has a first terminal coupled to a first bit line, a second terminal coupled to the voltage source, and a control terminal. The second transistor has a first terminal coupled to a second bit line, a second terminal coupled to the voltage source, and a control terminal. The sensing control circuit is coupled to the first bit line and the second bit line, and outputs a random bit data according to currents generated through the first transistor and the second transistor during an enroll operation of the bit data cell.

Abstract: A semiconductor structure includes a substrate, first fins extending from the substrate with a first fin pitch, and second fins extending from the substrate with a second fin pitch smaller than the first fin pitch. The semiconductor structure also includes first gate structures engaging the first fins with a first gate pitch and second gate structures engaging the second fins with a second gate pitch smaller than the first gate pitch. The semiconductor structure also includes first epitaxial semiconductor features partially embedded in the first fins and adjacent the first gate structures and second epitaxial semiconductor features partially embedded in the second fins and adjacent the second gate structures. A bottom surface of the first epitaxial semiconductor features is lower than a bottom surface of the second epitaxial semiconductor features.

Abstract: The present disclosure provides a method for preparing a semiconductor device. The method includes forming a sacrificial source/drain structure over a first carrier substrate; forming a redistribution structure over the sacrificial source/drain structure; attaching the redistribution structure to a second carrier substrate; removing the first carrier substrate after the redistribution structure is attached to the second carrier substrate; replacing the sacrificial source/drain structure with a first source/drain structure; forming a backside contact over and electrically connected to the first source/drain structure; and forming an interconnect part over the backside contact.

Abstract: A system and method for storing data associated with a system management interrupt (SMI) in a computer system. Notification of a system management interrupt is received on a central processing unit. The central processing unit enters a system management mode. A system management handler of a basic input output system (BIOS) is executed by a bootstrap processor of the central processing unit. The system management interrupt is initiated via the bootstrap processor. The system management interrupt data is stored in a register of the bootstrap processor. The SMI data is converted to an accessible format. The converted SMI data is stored in a memory.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A barbell support assembly is provided, including: a base; a support arm, including a connection section and a hook section connected with a first end of the connection section, the connection section being rotatably connected to the base and swingable between a first position and a second position, the hook section defining a hooking space; and a restoration unit, connected with a second end of the connection section, biasing the support arm toward the first position; when a rod of a barbell is received within the hooking space, the barbell drives the support arm to move from the first position to the second position, and when the rod of the barbell is removed from the support arm, the restoration unit forces the support arm to return to the first position.

Abstract: An optical modulator includes a carrier and a waveguide disposed on the carrier. The waveguide includes a first optical coupling region, a second optical coupling region, first regions, and second regions. The first optical coupling region is doped with first dopants. The second optical coupling region abuts the first optical coupling region and is doped with second dopants. The first dopants and the second dopants are of different conductivity type. The first regions are doped with the first dopants and are arrange adjacent to the first optical coupling region. The first regions have respective increasing doping concentrations as distances of the first regions increase from the first optical coupling region. The second regions are doped with the second dopants and are arranged adjacent to the second optical coupling region. The second regions have respective increasing doping concentrations as distances of the second regions increase from the second optical coupling region.

Abstract: An image sensor chip and a sensing method thereof are provided. The image sensor chip includes a pixel array. The pixel array includes a plurality of pixel units, and each of the pixel units includes a light sensing circuit, a reset switch and an output circuit. The reset switch is coupled to a first terminal of the light sensing circuit. The reset switch resets the light sensing circuit during reset period. The output circuit is coupled to the first terminal of the light sensing circuit. The output circuit of the pixel unit outputs difference information corresponding to the difference between the first sensing result of the light sensing circuit in a first frame period and the second sensing result of the light sensing circuit in a second frame period after the first frame period to a corresponding one of a plurality of readout lines of the pixel array.