Abstract: A method of backlight control for a display panel is provided. The display panel is configured to display with a variable refresh rate in a plurality of frame periods each having a fixed period and a variable period. The method includes steps of: generating a first backlight control signal in the fixed period of a frame period; determining whether a liquid crystal (LC) transition time corresponding to the frame period ends before an end time of the variable period of the frame period; generating a second backlight control signal in the variable period of the frame period when the LC transition time ends before the end time of the variable period of the frame period; and generating a compensation backlight control signal in a next frame period according to a backlight duty cycle of the frame period.

Abstract: The present disclosure provides a method for fabricating an image sensor. The method includes the following operations. A cavity is formed at a first surface of a substrate. A germanium layer is formed in the cavity. A first heavily doped region is formed in the germanium layer by an implantation operation. A second heavily doped region is formed at a position proximal to a top surface of the germanium layer, wherein the second heavily doped region is laterally surrounded by the first heavily doped region from a top view perspective. An interconnect structure is formed over the germanium layer.

Abstract: Provided is a composition for improving gut microbiota, including: a bacterial species combination consisting of Limosilactobacillus fermentum TCI275 with an accession number of BCRC 910940, Bifidobacterium animalis subsp. lactis TCI604 with an accession number of BCRC 910887, and Weizmannia coagulans TCI803 with an accession number of BCRC 910946. Provided is a method for improving gut microbiota of a subject in need thereof with the bacterial species combination.

Abstract: A touch sensing apparatus includes a panel with touch detection function and a touch detection circuitry. The touch detection circuitry is coupled to the panel, and is configured to detect a touch operation on the panel, record an error event of the touch sensing apparatus, and write the error event into an external storage medium via a data transmission interface thereof.

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: Apparatus and methods are provided for thermal throttling for UE configured with multi-panel transceiving on FR2. In one novel aspect, the UE prioritizes throttling actions based on signal qualities of each transceiving panel. In one embodiment, the switching to the target panel from the active panel is selected as the highest priority throttling action when the signal quality of the target panel is similar to the active panel. In another embodiment, the UE further determines if the quality of the target panel is sufficient to support mmW transceiving before switching to the target panel. In one embodiment, the UE reduces one or more antennae of an active panel when the signal quality difference between the active panel and the target panel is bigger than a predefined gap threshold.

Abstract: A package structure includes a first die and a second die embedded in a first molding material, a first redistribution structure over the first die and the second die, a second molding material over portions of the first die and the second die, wherein the second molding material is disposed between a first portion of the first redistribution structure and a second portion of the first redistribution structure, a first via extending through the second molding material, wherein the first via is electrically connected to the first die, a second via extending through the second molding material, wherein the second via is electrically connected to the second die and a silicon bridge electrically coupled to the first via and the second via.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A method for flattening a three-dimensional shoe upper template is provided. The method includes providing a three-dimensional last model, obtaining a three-dimensional grid model, obtaining a three-dimensional thickened grid model, obtaining a two-dimensional initial-value grid model, and obtaining a two-dimensional grid model with the smallest energy value. A system and a non-transitory computer-readable medium for performing the method are also provided. The method makes it possible to precisely flatten a three-dimensional last model with a non-developable surface and thereby convert the three-dimensional last model into a two-dimensional grid model.

Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A resetting system includes a driver that controls a touchscreen, the driver including a driver communication interface that defines a bus for transferring a transfer signal; and an on-screen display (OSD) device that generates an OSD signal representing a predetermined reset image in response to a predetermined event, the OSD signal superimposing over pixels and graphics data to be rendered on the touchscreen; and a host that transfers the transfer signal to or from the driver, the host including a host communication interface that defines the bus for transferring the transfer signal to or from the driver.

Abstract: The disclosure provides an in-memory computing (IMC) memory device and an IMC method thereof. The IMC memory device includes; a memory array including a plurality of computing units, each of the computing units including a plurality of parallel-coupling computing cells, the parallel-coupling computing cells of the same computing unit receiving a same input voltage; wherein a plurality of input data is converted into a plurality input voltages; after receiving the input voltages, the computing units generate a plurality of output currents; and based on the output currents, a multiply accumulate (MAC) of the input data and a plurality of conductance of the computing cells is generated.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: An electronic window is provided for adjusting light and includes a first panel, a second panel, and an intermediate layer. The first panel includes a first alignment layer. The second panel includes a second alignment layer. The intermediate layer is disposed between the first panel and the second panel. The angle of orientation of the first alignment layer is between 25 degrees and 65 degrees, and the angle of orientation of the second alignment layer is between 115 degrees and 155 degrees.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: Context information of a handshake between a source entity and a target entity is obtained at a security proxy. The context information is transmitted from the security proxy to a key manager. The key manager maintains a first private key of the security proxy. A first handshake message is received from the key manager. The first handshake message is generated at least based on the context information and signed with the first private key. The first handshake message is then transmitted to the target entity.

Abstract: An automatic nucleic acid detection system and a method thereof are disclosed. The automatic nucleic acid detection method includes: performing, by an automatic control subsystem, on a nucleic acid extraction machine platform, a nucleic acid extraction on one or more specimens in a sample tray to generate one or more corresponding nucleic acids in the sample tray; distributing, by the automatic control subsystem, on a nucleic acid distribution machine platform, the nucleic acid in each hole of the sample tray and a first reagent into a plurality of holes of a detection tray, wherein the number of holes of the detection tray is greater than that of the sample tray; and performing, by the automatic control subsystem, on a nucleic acid detection machine platform, a nucleic acid detection on the detection tray.