Abstract: A method for manufacturing a golf ball having a multi-layered pattern is provided. Firstly, a semi-finished product of the golf ball is provided and includes a ball-shaped body and a base layer covering an outer surface of the ball-shaped body. Then, the semi-finished product of the golf ball is rotated at a predetermined rotation speed, and a color paint is applied to the semi-finished product of the golf ball by spraying from each of an upper position, a middle position, and a lower position. The multi-layered pattern includes an upper-layer pattern area, a mid-layer pattern area, and a lower-layer pattern area that are different in color from each other.

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.

Abstract: A semiconductor device includes a fin structure, a metal gate stack, a barrier structure and an epitaxial source/drain region. The fin structure is over a substrate. The metal gate stack is across the fin structure. The barrier structure is on opposite sides of the metal gate stack. The barrier structure comprises one or more passivation layers and one or more barrier layers, and the one or more passivation layers have a material different from a material of the one or more barrier layers. The epitaxial source/drain region is over the barrier structure.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.

Abstract: The present invention discloses a processor control method including: controlling a processor to execute a first operating system in a first state; when the processor executing the first operating system satisfies a predetermined condition, controlling the processor to switch from the first state to a second state; and controlling the processor to execute a second operating system in the second state, wherein an authority of the first state is higher than an authority of the second state.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A frame pool is disclosed including a frame assembly and a pool liner, the frame assembly including horizontal frame members and a vertical frame member coupled together via a T-shaped joint. The T-shaped joint may be constructed of plastic to facilitate attachment and detachment to the adjacent frame members and to resist galling and corrosion. The T-shaped joint may also be relatively small to improve the appearance and water containment of the frame pool.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A control circuit of a power converter and a control method thereof are provided. The control circuit includes an error amplifier, a controller, a digital filter, and a digital pulse width signal modulator. The error amplifying circuit is coupled to an output terminal of the power converter and provides a digital error signal. The controller provides a first working parameter corresponding to the first external control command when receiving a first external control command. The digital filter generates a current digital compensation value. The digital pulse width signal modulator generates a pulse width modulation signal. The controller provides a second working parameter corresponding to the second external control command when receiving a second external control command. The controller calculates a transition value according to the second working parameter and the current digital compensation value. The controller provides the second working parameter and the transition value to the digital filter.

Abstract: A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Abstract: The disclosure provides a local stretch packaging structure, including a substrate, a flexible electronic element, a plurality of light-emitting display elements, and a packaging layer. The flexible electronic element is disposed on the substrate. These light-emitting display elements are disposed on the flexible electronic element. The packaging layer includes a packaging area and a non-packaging area. The packaging area covers the upper surface and sidewalls of these light-emitting display elements. The non-packaging area is directly covered the flexible electronic element that is not disposed with these light-emitting display elements.

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.

Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: A key structure is provided. The key structure includes an elastic element and a keycap disposed on the elastic element. The elastic element includes a movable portion, a fixed portion and a connection portion. The fixed portion surrounds the movable portion. The connection portion connects the fixed portion with the movable portion. The keycap includes a first connection portion. The first connection portion is connected to the fixed portion or the movable portion.

Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.