Abstract: A control method for a memory device is provided. The control method includes the following steps. Convert multiple input bits on multiple bit-channels into a code word through a polar code transformation. Select a boundary bit-channel among the bit-channels according to a first ranking list for the bit-channels. Identify a target memory cell among the memory cells according to the boundary bit-channel and a generator matrix of the polar code transformation. Decrease a raw bit error rate of the target memory cell.

Abstract: A method for writing data into a persistent storage device includes grouping a plurality of data entries stored in a temporary storage device to form a data unit, such that the data unit has a size equal to an integer multiple of a size of an access unit of the persistent storage device. The method further includes writing the data unit into the persistent storage device.

Abstract: A control method for a memory device is provided. The control method includes the following steps. Convert multiple input bits on multiple bit-channels into a code word through a polar code transformation. Select a boundary bit-channel among the bit-channels according to a first ranking list for the bit-channels. Identify a target memory cell among the memory cells according to the boundary bit-channel and a generator matrix of the polar code transformation. Decrease a raw bit error rate of the target memory cell.

Abstract: A memory device includes a memory controller and a non-volatile memory communicatively coupled to the memory controller and storing a mapping table and a journal table. The memory controller is configured to write data and a logical address of the data into the non-volatile memory, load mapping information related to the logical address of the data from the mapping table of the non-volatile memory into a mapping cache of the memory controller, update the mapping cache with an updated mapping relationship between the logical address of the data and a physical address of the data, and perform a journaling operation to write the updated mapping relationship into the journal table.

Abstract: A cache system is provided. The cache system includes a first cache and a second cache. The first cache is configured for storing a first status of a plurality of data. The second cache is configured for storing a table. The table includes the plurality of data arranged from a highest level to a lowest level. The cache system is configured to update the first status of the plurality of data in the first cache. The cache system is further configured to update the table in the second cache according to the first status of the plurality of data.

Abstract: An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.

Abstract: An operating method for a memory, the memory comprising at least one memory block including a plurality of first pages and a plurality of second pages corresponding to the first pages, the operating method including the following steps: determining whether a target first page of the first pages is valid, wherein the target first page is corresponding to a target second page of the second pages; if the target first page is valid, performing first type programming on the target second page; if the target first page is invalid, performing second type programming on the target second page.

Abstract: A method to operate a single bit per cell memory comprises erasing a group of memory cells establishing a first logical value by setting threshold voltages in a first range of threshold voltages. First writing, after said erasing, includes programming first selected memory cells to establish a second logical value by setting threshold voltages in a second range of threshold voltages, and saving a sensing state parameter to indicate a first read voltage. Second writing, after said first writing, includes programming second selected memory cells to establish the second logical value by setting threshold voltages in a third range of threshold voltages, and saving the sensing state parameter to indicate a second read voltage. After a number of writings including said first writing and said second writing reaches a threshold number for writing the group of memory cells, the group of memory cells can be erased.

Abstract: A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N?K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q?K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q?K frozen bits are allocated to the N?K frozen bit-channels and the q additional frozen bit-channels.

Abstract: A data processing system comprises a storage device, an interface module and a scheduler. The interface module is configured to dispatch a non-prioritized request via a first data path, and to transfer application-level information of an application via a second data path. The scheduler, coupled to the first and second data path, is configured to enable an access to the storage device according to the non-prioritized request and the application-level information respectively received from the first and second data paths.

Abstract: A data allocating method includes steps of: determining whether data to be written into a physical memory block is hot data or cold data; when the data is hot data, according to a hot data allocating order, searching at least one first empty sub-block from the physical memory block to allocate the data; when the data is cold data, according to a cold data allocating order, searching at least one second empty sub-block from the physical memory block to allocate the data.

Abstract: An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.

Abstract: A method to operate a single bit per cell memory comprises erasing a group of memory cells establishing a first logical value by setting threshold voltages in a first range of threshold voltages. First writing, after said erasing, includes programming first selected memory cells to establish a second logical value by setting threshold voltages in a second range of threshold voltages, and saving a sensing state parameter to indicate a first read voltage. Second writing, after said first writing, includes programming second selected memory cells to establish the second logical value by setting threshold voltages in a third range of threshold voltages, and saving the sensing state parameter to indicate a second read voltage. After a number of writings including said first writing and said second writing reaches a threshold number for writing the group of memory cells, the group of memory cells can be erased.

Abstract: A memory system is provided. The memory system includes a memory controller and a first memory block. The first memory block is configured to store a first data from a top of the first memory block in a top-down fashion. The first memory block is configured to store a first metadata corresponding to the first data from a bottom of the first memory block in a bottom-up fashion. The first data forms a first data area. The first metadata forms a first metadata area. And a first continuous space is formed between a bottom of the first data area and a top of the first metadata area.

Abstract: A memory system includes a memory array including a plurality of memory cells, and an encoder operatively coupled to the memory array, for encoding an original data element to be programmed into the memory cells into a uniform data element in which the number of “0”s approximately equals the number of “1”s.

Abstract: A method and a device for performing a polar codes channel-aware procedure are provided. A plurality of bit-channels have a polar code construction which is dynamic. The method includes the following steps. A plurality of reliability indices of some of the bit-channels are ranked. Whether an updating condition is satisfied is determined according to a ranking sequence of the reliability indices. If the updating condition is satisfied, the polar code construction is updated according to the ranking sequence of the reliability indices.

Abstract: A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N?K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q?K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q?K frozen bits are allocated to the N?K frozen bit-channels and the q additional frozen bit-channels.

Abstract: A multiple-bit-per-cell, page mode memory comprises a plurality of physical pages, each physical page having N addressable pages p(n). Logic implements a plurality of selectable program operations to program an addressed page. Logic select one of the plurality of selectable program operations to program an addressed page in the particular physical page using a signal that indicates a logical status of another addressable page in the particular physical page. The logical status can indicate whether the other addressable page contains invalid data. The first program operation overwrites the other addressable page, and the second program operation preserves the other addressable page. The first program operation can execute more quickly than the second program operation. The logic can also be applied for programming multiple-bit-per-cell memory not configured in a page mode.

Abstract: A first memory cell including a phase change material. The first memory cell is programmable to store one data value of a plurality of data values. The plurality of data values are represented by a plurality of non-overlapping ranges of resistance of the first memory cell. At least one testing pulse is applied to the first memory cell to establish a cell resistance of the first memory cell in an intermediate range of resistance, the intermediate range of resistance in between first and second adjacent ranges in the plurality of non-overlapping ranges of resistance representing the plurality of data values. After applying the at least one testing pulse to the first memory cell, it is determined whether to apply at least one healing pulse to repair the first memory cell, depending on relative values of (i) the cell resistance in the intermediate range of resistance and (ii) a reference resistance in the intermediate range of resistance.

Abstract: A buffer cache device used to get at least one data from at least one application is provided, wherein the buffer cache device includes a first-level cache memory, a second-level cache memory and a controller. The first-level cache memory is used to receive and store the data. The second-level cache memory has a memory cell architecture different from that of the first-level cache memory. The controller is used to write the data stored in the first-level cache memory into the second-level cache memory.