Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure over a substrate, and a first interconnect structure arranged within the dielectric structure. A lower interconnect structure is arranged within the dielectric structure. The first interconnect structure and the lower interconnect structure comprise one or more different conductive materials. The first interconnect structure continuously extends from directly over a topmost surface of the lower interconnect structure facing away from the substrate to along opposing outer sidewalls of the lower interconnect structure.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip having a back-end-of-the-line interconnect stack. The integrated chip has a dielectric structure arranged over a substrate. A first interconnect structure is arranged within the dielectric structure and has sidewalls and a horizontally extending surface that define a recess within a lower surface of the first interconnect structure facing the substrate. A lower interconnect structure is arranged within the dielectric structure and extends from within the recess to a location between the first interconnect structure and the substrate. The first interconnect structure and the lower interconnect structure comprise one or more different conductive materials.

Abstract: A method for forming a semiconductor device structure includes forming a first dielectric layer over a semiconductor substrate and forming an etch stop layer with a hole over the first dielectric layer. The method also includes forming a second dielectric layer over the etch stop layer and forming a first mask element with a trench opening over the second dielectric layer. The method further includes forming a second mask element over the first mask element, and the second mask element has a via opening. In addition, the method includes etching the second dielectric layer through the via opening and etching the second dielectric layer through the trench opening. As a result, a trench and a via hole are formed in the second dielectric layer and the first dielectric layer, respectively. The method includes forming a conductive material in the via hole and the trench.

Abstract: A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.

Abstract: A method includes forming a hard mask over a target layer, performing a treatment on a first portion of the hard mask to form a treated portion, with a second portion of the hard mask left untreated as an untreated portion. The method further includes subjecting both the treated portion and the untreated portion of the hard mask to etching, in which the untreated portion is removed as a result of the etching, and the treated portion remains after the etching. A layer underlying the hard mask is etched, and the treated portion of the hard mask is used as a part of an etching mask in the etching.

Abstract: A method for forming a semiconductor device structure includes forming a first dielectric layer over a semiconductor substrate and forming an etch stop layer with a hole over the first dielectric layer. The method also includes forming a second dielectric layer over the etch stop layer and forming a first mask element with a trench opening over the second dielectric layer. The method further includes forming a second mask element over the first mask element, and the second mask element has a via opening. In addition, the method includes etching the second dielectric layer through the via opening and etching the second dielectric layer through the trench opening. As a result, a trench and a via hole are formed in the second dielectric layer and the first dielectric layer, respectively. The method includes forming a conductive material in the via hole and the trench.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first conductive feature in a first dielectric layer and a second conductive feature over the first dielectric layer. The semiconductor device structure also includes a conductive via between the first conductive feature and the second conductive feature. The conductive via includes an etching stop layer over the first conductive feature, a conductive pillar over the etching stop layer, and a capping layer surrounding the conductive pillar and the etching stop layer. The first conductive feature and the second conductive feature are electrically connected to each other through the capping layer, the conductive pillar, and the etching stop layer. The semiconductor device structure further includes a second dielectric layer over the first dielectric layer and below the second conductive feature. The second dielectric layer surrounds the conductive via.

Abstract: Two-dimensional (2-D) interconnects in a one-dimensional (1-D) patterning layout for integrated circuits is disclosed. This disclosure provides methods of connecting even or odd numbered lines that are in the x-direction of a 1-D patterning layout through 2-D interconnects in the y-direction. Depending on device design needs, 2-D interconnects may be perpendicular or non-perpendicular to the even or odd numbered lines. The freedom of two-dimensional patterning compared to conventional self-aligned multiple patterning (SAMP) processes used in the 1-D patterning processes is provided. The two-dimensional patterning described herein provides line widths that match the critical dimensions in both x and y directions. The separation between the 1-D lines or between 2-D interconnects and the end of 1-D lines can be kept to a constant and at a minimum.

Abstract: A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.

Abstract: A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.

Abstract: Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

Abstract: Two-dimensional (2-D) interconnects in a one-dimensional (1-D) patterning layout for integrated circuits is disclosed. This disclosure provides methods of connecting even or odd numbered lines that are in the x-direction of a 1-D patterning layout through 2-D interconnects in the y-direction. Depending on device design needs, 2-D interconnects may be perpendicular or non-perpendicular to the even or odd numbered lines. The freedom of two-dimensional patterning compared to conventional self-aligned multiple patterning (SAMP) processes used in the 1-D patterning processes is provided. The two-dimensional patterning described herein provides line widths that match the critical dimensions in both x and y directions. The separation between the 1-D lines or between 2-D interconnects and the end of 1-D lines can be kept to a constant and at a minimum.

Abstract: A first metal layer of a semiconductor device includes a plurality of first metal lines that each extend along a first axis, and a first rail structure that extends along the first axis. The first rail structure is physically separated from the first metal lines. A second metal layer is located over the first metal layer. The second metal layer includes a plurality of second metal lines that each extend along a second axis orthogonal to the first axis, and a second rail structure that extends along the first axis. The second rail structure is physically separated from the second metal lines. The second rail structure is located directly over the first rail structure. A plurality of vias is located between the first metal layer and the second metal layer. A subset of the vias electrically interconnects the first rail structure to the second rail structure.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip having a back-end-of-the-line interconnect stack. The integrated chip has a dielectric structure arranged over a substrate. A first interconnect structure is arranged within the dielectric structure and has sidewalls and a horizontally extending surface that define a recess within a lower surface of the first interconnect structure facing the substrate. A lower interconnect structure is arranged within the dielectric structure and extends from within the recess to a location between the first interconnect structure and the substrate. The first interconnect structure and the lower interconnect structure comprise one or more different conductive materials.

Abstract: The present disclosure relates to a method of forming a BEOL metallization layer that uses different conductive materials (e.g., metals) to fill different size openings in an inter-level dielectric layer, and an associated apparatus. In some embodiments, the present disclosure relates to an integrated chip having a first plurality of metal interconnect structures disposed within a first BEOL metallization layer, which include a first conductive material. The integrated chip also has a second plurality of metal interconnect structures disposed within the first BEOL metallization layer at positions laterally separated from the first plurality of metal interconnect structures. The second plurality of metal interconnect structures have a second conductive material that is different than the first conductive material.

Abstract: A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.

Abstract: Disclosed herein is a structure conductive lines disposed in a base layer and separated by a first region. Pillars are each disposed over a respective one of the conductive lines. A dielectric fill layer is disposed over the pillars and extending between the pillars into the first region, and a void is disposed in the dielectric fill layer in the first region between the conductive lines.

Abstract: Conductive element structures and methods of manufacture thereof are disclosed. In some embodiments, a method of forming a conductive element in an insulating layer includes: forming a recess in a metal layer disposed over the insulating layer; selectively forming a metal liner on a sidewall of the recess; and etching a via in the insulating layer using the metal layer and the metal liner as a mask.

Abstract: A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top surface of the first metal line is higher than a top surface of the second rounded metal line and a bottom surface of the first metal line is substantially level with a bottom surface of the second rounded metal line and a second air gap between sidewalls of the second rounded metal line and the first metal line.

Abstract: Conductive element structures and methods of manufacture thereof are disclosed. In some embodiments, a method of forming a conductive element in an insulating layer includes: forming a recess in a metal layer disposed over the insulating layer; selectively forming a metal liner on a sidewall of the recess; and etching a via in the insulating layer using the metal layer and the metal liner as a mask.