Abstract: A test strip for sampling a bodily fluid may include multiple layers of a substrate material, an adhesive between at least some of the multiple layers, and a microfluidic channel formed between at least some of the multiple layers. The test strip may further include multiple electrodes on one of the multiple layers, positioned and partially exposed within the microfluidic channel, an additional material positioned at or near an entrance to the microfluidic channel, to selectively limit the flow of at least one of bubbles or debris into the microfluidic channel, and at least one exit port in at least one of the multiple layers to allow for release of pressure from the test strip. In some embodiments, the test strip is a saliva analysis test strip. In some embodiments, the test strip includes multiple exit ports to prevent blockage of sample flow.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A fingerprint identification module includes a light guiding member, a flexible circuit board, two light emitting members, and a fingerprint identification chip. The light guiding member includes a bottom and a protruding edge. The protruding edge surrounds to form a first space. A first through-hole is formed on the bottom. The flexible circuit board is disposed in the first space and has a first portion, a second portion, a third portion, and a fourth portion connected in sequence. The first portion goes out of the light guiding member through the first through-hole. The third portion faces a direction opposite to the bottom. The second portion and the fourth portion face the bottom of the light guiding member. The light emitting members are disposed on the flexible circuit board and face the light guiding member. The fingerprint identification chip is disposed on the third portion of the flexible circuit board.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: Provided is a semiconductor device including a first transistor of a first type comprising a first work function layer, the first work function layer comprising a first underlying layer; and a second transistor of the first type comprising a second work function layer, the second work function layer comprising a second underlying layer. The first and second underlying layers each comprises a metal nitride layer with at least two kinds of metals, and a thickness of the first underlying layer is greater than a thickness of the second underlying layer. A method of manufacturing a gate structure for a semiconductor device is also provided.

Abstract: Generally, the present disclosure provides example embodiments relating to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In an example method, a gate dielectric layer is formed over an active area on a substrate. A dummy layer that contains a passivating species (such as fluorine) is formed over the gate dielectric layer. A thermal process is performed to drive the passivating species from the dummy layer into the gate dielectric layer. The dummy layer is removed. A metal gate electrode is formed over the gate dielectric layer. The gate dielectric layer includes the passivating species before the metal gate electrode is formed.

Abstract: Disclosed herein are novel synthetic polypeptides and uses thereof in the preparation of liposomes. According to embodiments of the present disclosure, the synthetic polypeptide comprises a membrane lytic motif, a masking motif, and a linker configured to link the membrane lytic motif and the masking motif. The linker is cleavable by a stimulus, such as, light, protease, or phosphatase. Once being coupled to a liposome, the exposure to the stimulus cleaves the linker that results in the separation of the masking motif from the membrane lytic motif, which in turn exerts membrane lytic activity on the liposome that leads to the collapse of the intact structure of the liposome, and releases the agent encapsulated in the liposome to the target site. Also disclosed herein are methods of diagnosing or treating a disease in a subject by use of the present liposomes.

Abstract: A method of manufacturing a semiconductor device includes forming a gate trench over a semiconductor substrate, depositing a gate dielectric layer and a work function layer in the gate trench, depositing a capping layer over the work function layer, passivating a surface portion of the capping layer to form a passivation layer, removing the passivation layer, depositing a fill layer in the gate trench, recessing the fill layer and the capping layer, and forming a contact metal layer above the capping layer in the gate trench.

Abstract: A method includes forming a first transistor, which includes forming a first gate dielectric layer over a first channel region in a substrate and forming a first work-function layer over the first gate dielectric layer, wherein forming the first work-function layer includes depositing a work-function material using first process conditions to form the work-function material having a first proportion of different crystalline orientations and forming a second transistor, which includes forming a second gate dielectric layer over a second channel region in the substrate and forming a second work-function layer over the second gate dielectric layer, wherein forming the second work-function layer includes depositing the work-function material using second process conditions to form the work-function material having a second proportion of different crystalline orientations.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: Provided is a semiconductor device including a first n-type transistor comprising a first work function layer, the first work function layer comprising a first underlying layer; and a second n-type transistor comprising a second work function layer, the second work function layer comprising a second underlying layer. The first and second underlying layers each comprises a metal nitride layer with at least two kinds of metals, and a thickness of the first underlying layer is greater than a thickness of the second underlying layer. A method of manufacturing a gate structure for a semiconductor device is also provided.

Abstract: A fingerprint identification module includes a light guiding member, a flexible circuit board, two light emitting members, and a fingerprint identification chip. The light guiding member includes a bottom and a protruding edge. The protruding edge surrounds to form a first space. A first through-hole is formed on the bottom. The flexible circuit board is disposed in the first space and has a first portion, a second portion, a third portion, and a fourth portion connected in sequence. The first portion goes out of the light guiding member through the first through-hole. The third portion faces a direction opposite to the bottom. The second portion and the fourth portion face the bottom of the light guiding member. The light emitting members are disposed on the flexible circuit board and face the light guiding member. The fingerprint identification chip is disposed on the third portion of the flexible circuit board.

Abstract: Generally, the present disclosure provides example embodiments relating to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In an example method, a gate dielectric layer is formed over an active area on a substrate. A dummy layer that contains a passivating species (such as fluorine) is formed over the gate dielectric layer. A thermal process is performed to drive the passivating species from the dummy layer into the gate dielectric layer. The dummy layer is removed. A metal gate electrode is formed over the gate dielectric layer. The gate dielectric layer includes the passivating species before the metal gate electrode is formed.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate over a fin, where the fin protrudes above a substrate; surrounding the dummy gate with a dielectric material; and replacing the dummy gate with a replacement gate structure, where replacing the dummy gate includes: forming a gate trench in the dielectric material, where forming the gate trench includes removing the dummy gate; forming a metal-gate stack in the gate trench, where forming the metal-gate stack includes forming a gate dielectric layer, a first work function layer, and a gap-filling material sequentially in the gate trench; and enlarging a volume of the gap-filling material in the gate trench.

Abstract: An intelligent analysis system for measuring signals of polishing pad surface, a method and a computer readable medium thereof are provided. The intelligent analysis system includes a measurement signal capturing device and a measurement signal analysis device signally-connected to each other. After the measurement signal capturing device obtains the measurement signal of the measured polishing pad, an artificial intelligence model of the measurement signal analysis device is trained to classify the measurement signal to remove the interference caused by a water film on the polishing pad to obtain a better measurement signal, such that the intelligent analysis system can solve the problems of time-consuming, laborious and misjudgment caused by the classification of the measurement signal by the conventional technology.

Abstract: Monocyte-specific nucleic acid aptamers and lipid nanoparticles comprising such for use in drug delivery. Also disclosed herein are use of the aptamer-based lipid nanoparticle drug delivery system for treating heart injury.